Micron Technology Inc. Memoria
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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
ProduttoreMicron Technology Inc.
Record 8.604
Pagina 52/287
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di memoria | Formato memoria | Tecnologia | Dimensione della memoria | Interfaccia di memoria | Frequenza di clock | Tempo di ciclo di scrittura - Parola, pagina | Tempo di accesso | Tensione - Alimentazione | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Micron Technology Inc. |
IC DRAM 64G 2133MHZ |
1.945 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
|
|
Micron Technology Inc. |
IC DRAM 64G 2133MHZ |
4.392 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 2133MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | Surface Mount | 376-WFBGA | 376-WFBGA (14x14) |
|
|
Micron Technology Inc. |
LPDDR4 64G 2GX32 FBGA WT 8DP |
4.446 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
LPDDR4 64G 2GX32 FBGA WT 8DP |
5.184 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC FLASH 1T MMC |
2.810 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
Micron Technology Inc. |
IC FLASH 1T MMC |
8.316 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | MMC | - | - | - | - | -40°C ~ 105°C (TA) | Surface Mount | 153-TFBGA | 153-TFBGA (11.5x13) |
|
|
Micron Technology Inc. |
IC FLASH 1T MMC 169LFBGA |
5.184 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
|
Micron Technology Inc. |
IC FLASH 1T MMC |
468 |
|
e•MMC™ | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | MMC | - | - | - | - | -40°C ~ 85°C (TA) | Surface Mount | 169-LFBGA | 169-LFBGA (14x18) |
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
2.358 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
2.322 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
7.866 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 FBGA |
8.766 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC FLASH 128G PARALLEL 48TSOP |
7.776 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
|
|
Micron Technology Inc. |
IC FLASH 128G PARALLEL 100TBGA |
3.438 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | 100-TBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 128G PARALLEL 100TBGA |
5.364 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | 100-TBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 128G PARALLEL 100TBGA |
45 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | 100-TBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 128G PARALLEL 100TBGA |
1.541 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 128Gb (16G x 8) | Parallel | 100MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 100-TBGA | 100-TBGA (12x18) |
|
|
Micron Technology Inc. |
IC DRAM 64G 933MHZ |
8.370 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR3 | 64Gb (1G x 64) | - | 933MHz | - | - | 1.2V | -30°C ~ 85°C (TC) | Surface Mount | 253-VFBGA | 253-VFBGA (12x12) |
|
|
Micron Technology Inc. |
IC DRAM 64G 933MHZ |
3.096 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR3 | 64Gb (1G x 64) | - | 933MHz | - | - | 1.2V | -30°C ~ 85°C (TC) | Surface Mount | 253-VFBGA | 253-VFBGA (12x12) |
|
|
Micron Technology Inc. |
MLC EMMC/LPDDR3 544G |
6.642 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC FLASH 1T PARALLEL 333MHZ |
4.878 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 1T PARALLEL 333MHZ |
3.619 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
IC DRAM 64G 1866MHZ |
8.298 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
|
|
Micron Technology Inc. |
IC DRAM 64G 1866MHZ |
6.444 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR4 | 64Gb (1G x 64) | - | 1866MHz | - | - | 1.1V | -30°C ~ 85°C (TC) | - | - | - |
|
|
Micron Technology Inc. |
IC FLASH 1.5T PARALLEL 333MHZ |
3.096 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1.5Tb (192G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 1.5T PARALLEL 333MHZ |
2.520 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1.5Tb (192G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
ALL IN ONE MCP 4352G |
5.436 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Micron Technology Inc. |
IC FLASH 1T PARALLEL 333MHZ |
2.988 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | - | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
IC FLASH 1T PARALLEL 333MHZ |
7.704 |
|
- | Non-Volatile | FLASH | FLASH - NAND | 1Tb (128G x 8) | Parallel | 333MHz | - | - | 2.5V ~ 3.6V | 0°C ~ 70°C (TA) | - | - | 132-VBGA (12x18) |
|
|
Micron Technology Inc. |
IC DRAM LPDDR4 WFBGA |
6.120 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |