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Micron Technology Inc. Memoria

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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
ProduttoreMicron Technology Inc.
Record 8.604
Pagina 53/287
Immagine
Numero parte
Produttore
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Serie
Tipo di memoria
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Tecnologia
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Tempo di ciclo di scrittura - Parola, pagina
Tempo di accesso
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Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
MT53E2G32D4DT-046 AAT:A TR
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
7.488
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E1G64D4SQ-046 AAT:A
Micron Technology Inc.
IC DRAM LPDDR4 WFBGA
6.282
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53E2G32D4DT-046 AAT:A
Micron Technology Inc.
IC DRAM LPDDR4 FBGA
8.082
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MTFC128GAJAECE-AIT
Micron Technology Inc.
IC FLASH 1T MMC
1.123
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MTFC128GAJAECE-AIT TR
Micron Technology Inc.
IC FLASH 1T MMC
5.076
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
1Tb (128G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
Surface Mount
169-LFBGA
169-LFBGA (14x18)
MT53D768M64D8SQ-053 WT:E
Micron Technology Inc.
IC DRAM 48G 1866MHZ FBGA
4.500
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-VFBGA
556-VFBGA (12.4x12.4)
MT53D768M64D8SQ-053 WT:E TR
Micron Technology Inc.
IC DRAM 48G 1866MHZ FBGA
4.608
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
556-VFBGA
556-VFBGA (12.4x12.4)
MT29E1HT08EMHBBJ4-3:B TR
Micron Technology Inc.
IC FLASH 1.5T PARALLEL 132VBGA
6.426
-
Non-Volatile
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT29E1HT08EMHBBJ4-3:B
Micron Technology Inc.
IC FLASH 1.5T PARALLEL VBGA
5.868
-
Non-Volatile
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
-
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
132-VBGA (12x18)
MT53D4G16D8AL-062 WT:E TR
Micron Technology Inc.
IC DRAM LPDDR4 SMD
4.122
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53D4G16D8AL-062 WT:E
Micron Technology Inc.
IC DRAM LPDDR4 SMD
3.114
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F256G08AKCBBH7-6IT:B TR
Micron Technology Inc.
IC FLASH 256G PARALLEL 167MHZ
2.556
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
152-TBGA
152-TBGA (14x18)
MT28HL64GRBB6EBL-0GCT TR
Micron Technology Inc.
IC FLASH NOR 1GX64 3.3V FLGA
4.878
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT28HL64GRBB6EBL-0GCT
Micron Technology Inc.
NOR FLASH 1GX64 PLASTIC 3.3V
6.786
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F4T08EUHAFM4-3T:A
Micron Technology Inc.
IC FLASH 4T PARALLEL 333MHZ
2.844
-
Non-Volatile
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F4T08EUHAFM4-3T:A TR
Micron Technology Inc.
IC FLASH 4T PARALLEL 333MHZ
3.222
-
Non-Volatile
FLASH
FLASH - NAND
4Tb (512G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT53D768M64D8NZ-046 WT:E
Micron Technology Inc.
IC DRAM 48G 2133MHZ FBGA
5.778
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT53D768M64D8NZ-046 WT:E TR
Micron Technology Inc.
IC DRAM 48G 2133MHZ FBGA
5.670
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
376-WFBGA
376-WFBGA (14x14)
MT29F256G08AUCABH3-10Z:A
Micron Technology Inc.
IC FLASH 256G PARALLEL 100LBGA
70
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MT29F256G08AUCABH3-10Z:A TR
Micron Technology Inc.
IC FLASH 256G PARALLEL 100LBGA
3.960
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MT40A4G8KVA-083H:G
Micron Technology Inc.
IC DRAM 32G PARALLEL 1.2GHZ
2.772
-
Volatile
DRAM
SDRAM - DDR4
32Gb (4G x 8)
Parallel
1.2GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x12)
MT40A4G8KVA-083H:G TR
Micron Technology Inc.
IC DRAM 32G PARALLEL 1.2GHZ
5.220
-
Volatile
DRAM
SDRAM - DDR4
32Gb (4G x 8)
Parallel
1.2GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x12)
MT29F256G08AUCABH3-10ITZ:A
Micron Technology Inc.
IC FLASH 256G PARALLEL 100LBGA
1.870
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MT29F256G08AUCABH3-10ITZ:A TR
Micron Technology Inc.
IC FLASH 256G PARALLEL 100MHZ
3.420
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
100-LBGA
100-LBGA (12x18)
MTA36ASF4G72PZ-2G9E2
Micron Technology Inc.
IC DRAM 288G PARALLEL 1467MHZ
4.260
-
Volatile
DRAM
SDRAM - DDR4
288Gb (4G x 72)
Parallel
1467MHz
-
-
1.2V
0°C ~ 95°C (TC)
-
-
-
MT29F2T08CUHBBM4-3R:B TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
4.824
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F2T08CUHBBM4-3R:B
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
500
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F3T08EUHBBM4-3R:B TR
Micron Technology Inc.
IC FLASH 3T PARALLEL 333MHZ
2.484
-
Non-Volatile
FLASH
FLASH - NAND
3Tb (384G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E2T08CUHBBM4-3:B TR
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
6.876
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29E2T08CUHBBM4-3:B
Micron Technology Inc.
IC FLASH 2T PARALLEL 333MHZ
134
-
Non-Volatile
FLASH
FLASH - NAND
2Tb (256G x 8)
Parallel
333MHz
-
-
2.5V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-