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Micron Technology Inc. Memoria

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CategoriaSemiconduttori / Circuiti integrati di memoria / Memoria
ProduttoreMicron Technology Inc.
Record 8.604
Pagina 238/287
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di memoria
Formato memoria
Tecnologia
Dimensione della memoria
Interfaccia di memoria
Frequenza di clock
Tempo di ciclo di scrittura - Parola, pagina
Tempo di accesso
Tensione - Alimentazione
Temperatura di esercizio
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
MT40A512M8RH-075E AIT:B TR
Micron Technology Inc.
IC DRAM 4G PARALLEL 78FBGA
4.842
-
Volatile
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.33GHz
-
-
1.14V ~ 1.26V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (9x10.5)
MT41K1G16DGA-125:A TR
Micron Technology Inc.
IC DRAM 16G PARALLEL 96FBGA
8.136
-
Volatile
DRAM
SDRAM - DDR3L
16Gb (1G x 16)
Parallel
800MHz
-
13.75ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9.5x14)
EDFP112A3PB-GD-F-D TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
4.860
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-GD-F-R TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
8.676
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-D TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
2.844
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-R TR
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
8.856
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
MTFC4GMDEA-4M IT TR
Micron Technology Inc.
IC FLASH 32G MMC 153VFBGA
3.366
e•MMC™
Non-Volatile
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-WFBGA
153-WFBGA (11.5x13)
EDFP112A3PB-GDTJ-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
5.310
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 105°C (TC)
-
-
-
EDFP112A3PB-GD-F-D
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
6.642
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-GD-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 800MHZ
8.766
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
800MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-D
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
7.776
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
EDFP112A3PB-JD-F-R
Micron Technology Inc.
IC DRAM 24G PARALLEL 933MHZ
6.768
-
Volatile
DRAM
SDRAM - Mobile LPDDR3
24Gb (192M x 128)
Parallel
933MHz
-
-
1.14V ~ 1.95V
-30°C ~ 85°C (TA)
-
-
-
MT42L16M32D1U67MWC2
Micron Technology Inc.
IC LPDDR2 SDRAM 1GBIT
3.436
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT42L32M16D1U67MWC1
Micron Technology Inc.
LPDDR2
4.554
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT42L32M16D1U67MWC2
Micron Technology Inc.
LPDDR2
8.334
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT53B256M32D1GZ-062 AIT:B
Micron Technology Inc.
IC DRAM 8G 1600MHZ
8.766
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
8Gb (256M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B256M32D1GZ-062 WT:B
Micron Technology Inc.
IC DRAM 8G 1600MHZ FBGA
5.346
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
8Gb (256M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 AIT:B
Micron Technology Inc.
IC DRAM 16G 1600MHZ
6.822
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 95°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT53B512M32D2GZ-062 WT:B
Micron Technology Inc.
IC DRAM 16G 1600MHZ FBGA
4.824
-
Volatile
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (11x14.5)
MT29F128G08EBCBBJ4-6:B
Micron Technology Inc.
IC FLASH 128G PARALLEL 166MHZ
6.930
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
166MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F512G08EMCBBJ5-10:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 100MHZ
4.950
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
100MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBB95A3WC1
Micron Technology Inc.
IC FLASH 128G PARALLEL
4.140
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBB95A3WC1-M
Micron Technology Inc.
IC FLASH 128G PARALLEL
6.228
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F128G08EBEBBWP:B
Micron Technology Inc.
IC FLASH 128G PARALLEL
2.160
-
Non-Volatile
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F256G08EECBBJ4-6:B
Micron Technology Inc.
IC FLASH 256G PARALLEL 167MHZ
6.696
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
-
132-VBGA (12x18)
MT29F256G08EFEBBWP:B
Micron Technology Inc.
IC FLASH 256G PARALLEL 48TSOP
6.228
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F512G08EKCBBJ5-6:B
Micron Technology Inc.
NAND FLASH
7.038
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F512G08EMCBBJ5-6:B
Micron Technology Inc.
IC FLASH 512G PARALLEL 167MHZ
6.444
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT29F512G08EMCBBJ5-6:B.001
Micron Technology Inc.
IC FLASH 512G PARALLEL 167MHZ
3.348
-
Non-Volatile
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
-
-
-
MT38W201DAA033JZZI.X68
Micron Technology Inc.
MCP 5MX16 PLASTIC 2.0V IND
2.412
*
-
-
-
-
-
-
-
-
-
-
-
-
-