Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 9/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GP 1.2KV 350A BG-PB50ND-1 |
7.020 |
|
- | Standard | 1200V | 350A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1200V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 260A BG-PB50ND-1 |
4.194 |
|
- | Standard | 1600V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1600V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 350A BG-PB50ND-1 |
2.628 |
|
- | Standard | 1600V | 350A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1600V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.6KV 1030A |
6.462 |
|
- | Standard | 2600V | 1030A | 1.11V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 200V 2450A |
2.826 |
|
- | Standard | 200V | 2450A | 880mV @ 2000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 200V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2KV 690A |
2.988 |
|
- | Standard | 2000V | 690A | 2.7V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 25mA @ 2000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 400V 2450A |
2.772 |
|
- | Standard | 400V | 2450A | 880mV @ 2000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 400V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.2KV 850A |
7.128 |
|
- | Standard | 3200V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3200V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 2450A |
3.690 |
|
- | Standard | 600V | 2450A | 880mV @ 2000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.6KV 690A |
2.718 |
|
- | Standard | 2600V | 690A | 2.7V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | 9µs | 25mA @ 2600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GP 2.6KV 260A BG-PB50ND-1 |
2.808 |
|
- | Standard | 2600V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2600V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 700V 2450A |
5.490 |
|
- | Standard | 700V | 2450A | 880mV @ 2000A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 700V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 5095A |
6.336 |
|
- | Standard | 600V | 5095A | 990mV @ 4500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 3.6KV 850A |
4.068 |
|
- | Standard | 3600V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 3600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 4KV 850A |
5.598 |
|
- | Standard | 4000V | 850A | 1.28V @ 850A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 4000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 735A MODULE |
8.424 |
|
- | Standard | 1200V | 735A | 1.4V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1200V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.4KV 735A MODULE |
6.174 |
|
- | Standard | 1400V | 735A | 1.4V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1400V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 255A |
6.102 |
|
- | Standard | 1800V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 255A |
8.910 |
|
- | Standard | 1800V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Stud Mount | DO-205AA, DO-8, Stud | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
STD THYR DIODEN DISC |
2.934 |
|
- | Standard | 1800V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Stud Mount | - | BG-DSW27-1 | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
STD THYR DIODEN DISC |
6.858 |
|
- | Standard | 1800V | 255A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Stud Mount | - | BG-DSW27-1 | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 735A MODULE |
6.372 |
|
- | Standard | 1600V | 735A | 1.4V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2KV 732A MODULE |
6.048 |
|
- | Standard | 2000V | 732A | 1.64V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2000V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 732A MODULE |
4.284 |
|
- | Standard | 2200V | 732A | 1.64V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.6KV 732A MODULE |
2.808 |
|
- | Standard | 2600V | 732A | 1.64V @ 2200A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 5100A |
8.388 |
|
- | Standard | 600V | 5100A | 1.36V @ 14000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 2520A BG-D7526K0-1 |
5.760 |
|
- | Standard | - | 2520A | - | Standard Recovery >500ns, > 200mA (Io) | - | 75mA @ 2200V | - | Chassis Mount | DO-200AC, K-PUK | BG-D7526K0-1 | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GP 2200A BG-D7526K0-1 |
2.844 |
|
- | Standard | - | 2200A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 2000V | - | Chassis Mount | DO-200AC, K-PUK | BG-D7526K0-1 | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 5100A |
8.136 |
|
- | Standard | 600V | 5100A | 1.36V @ 14000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 2200A BG-D7526K0-1 |
7.326 |
|
- | Standard | - | 2200A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 2200V | - | Chassis Mount | DO-200AC, K-PUK | BG-D7526K0-1 | -40°C ~ 160°C |