Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 7/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
4.770 |
|
- | Standard | 1200V | 35A (DC) | 1.97V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
6.570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
3.870 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
2.736 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 51A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 67µA @ 420V | 970pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
7.326 |
|
- | Standard | 1200V | 50A | 2.05V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
7.794 |
|
- | Standard | 1200V | 50A (DC) | 1.97V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
8.928 |
|
- | Standard | 1200V | 75A | 2.05V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 14µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
5.076 |
|
- | Standard | 1200V | 75A (DC) | 1.97V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
6.102 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
8.730 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
3.816 |
|
- | Standard | 1200V | 100A | 2.05V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 18µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
6.804 |
|
- | Standard | 1200V | 100A (DC) | 1.97V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247-3 |
8.838 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DUMMY 57 |
7.956 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
4.860 |
|
- | Standard | 1200V | 150A | 2.05V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 26µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
2.952 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
5.166 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 200A WAFER |
8.334 |
|
- | Standard | 1200V | 200A (DC) | 1.41V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
8.586 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
THYR / DIODE MODULE DK |
4.086 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
7.380 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
IC DIODE EMITTER CTLR WAFER |
6.912 |
|
- | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
HIGH POWER THYR / DIO |
8.928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4.716 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
2.088 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
7.614 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
6.516 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4.986 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4.338 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
7.542 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |