Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 8/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
STD THYR/DIODEN DISC |
4.446 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
SIC CHIP |
4.050 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 200V 650A |
4.086 |
|
- | Standard | 200V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7.146 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 650A |
5.562 |
|
- | Standard | 600V | 650A | 950mV @ 450A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 970A |
5.040 |
|
- | Standard | 600V | 970A | 970mV @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 770A |
4.050 |
|
- | Standard | 1600V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 770A |
5.004 |
|
- | Standard | 1800V | 770A | 1.08V @ 400A | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 950A |
2.034 |
|
- | Standard | 1800V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 89A BG-PB20-1 |
4.914 |
|
- | Standard | 1200V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 1230A |
5.292 |
|
- | Standard | 1200V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.4KV 1230A |
8.982 |
|
- | Standard | 1400V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
SIC CHIP |
7.110 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 89A BG-PB20-1 |
6.732 |
|
- | Standard | 1600V | 89A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB20-1 |
6.516 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 820A |
5.886 |
|
- | Standard | 2200V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 950A |
5.688 |
|
- | Standard | 2200V | 950A | 1.12V @ 650A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 104A BG-PB20-1 |
7.308 |
|
- | Standard | 1600V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.4KV 820A |
7.794 |
|
- | Standard | 2400V | 820A | 1.25V @ 750A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2400V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 104A BG-PB20-1 |
7.506 |
|
- | Standard | 1800V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB20-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.6KV 1230A |
5.706 |
|
- | Standard | 1600V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1600V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1230A |
7.650 |
|
- | Standard | 1800V | 1230A | 1.063V @ 800A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 1800V | - | Chassis Mount | DO-200AA, A-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 104A BG-PB34-1 |
2.070 |
|
- | Standard | 1400V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1400V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.8KV 1050A |
8.964 |
|
- | Standard | 1800V | 1050A | 1V @ 1000A | Standard Recovery >500ns, > 200mA (Io) | - | 60mA @ 1800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
|
|
|
Infineon Technologies |
DIODE GP 1.6KV 171A BG-PB34-1 |
5.976 |
|
- | Standard | 1600V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1600V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 171A BG-PB34-1 |
3.510 |
|
- | Standard | 1200V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.2KV 104A BG-PB50ND-1 |
6.102 |
|
- | Standard | 1200V | 104A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 2.2KV 1030A |
4.950 |
|
- | Standard | 2200V | 1030A | 1.11V @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 40mA @ 2200V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
|
|
|
Infineon Technologies |
DIODE GP 1.8KV 171A BG-PB34-1 |
7.452 |
|
- | Standard | 1800V | 171A | - | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Module | BG-PB34-1 | -40°C ~ 135°C |
|
|
|
Infineon Technologies |
DIODE GP 1.4KV 260A BG-PB50ND-1 |
7.992 |
|
- | Standard | 1400V | 260A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30mA @ 1400V | - | Chassis Mount | Module | BG-PB50ND-1 | -40°C ~ 135°C |