Infineon Technologies Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 20/24
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A DIE |
3.384 |
|
- | Standard | 1200V | 75A | 2.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 285ns | 1.5µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
5.364 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.934 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A DIE |
2.124 |
|
- | Standard | 1200V | 100A | 2.7V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 2µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.032 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
7.236 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.556 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 5A DIE |
7.254 |
|
- | Standard | 1200V | 5A | 2.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 96ns | 100nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A DIE |
8.064 |
|
- | Standard | 1200V | 150A | 2.7V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 355ns | 3µA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
2.052 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
6.768 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 10A DIE |
8.982 |
|
- | Standard | 1200V | 10A | 2.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 154ns | 200nA @ 1200V | - | Surface Mount | Die | Die | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
3.924 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE CHIP EMITTER CONTROLLED |
4.752 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO247-3 |
1.184 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 580pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO247-3 |
283 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 305µA @ 1200V | 870pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SIC 600V 4A SAWN WAFER |
7.020 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
5.706 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
DIODE SIC 600V 5A SAWN WAFER |
7.326 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
6.570 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SIC 600V 8A SAWN WAFER |
4.734 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 8A (DC) | 1.7V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Surface Mount | Die | Die | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURPOSE SAWN WAFER |
4.482 |
|
* | - | - | - | - | - | - | - | - | Surface Mount | Die | Sawn on foil | - |
|
|
|
Infineon Technologies |
AC/DC DIGITAL PLATFORM |
3.114 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO263-3-2 |
4.410 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 10A D2PAK |
3.672 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7.884 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A WAFER |
7.344 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO220-2 |
5.184 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
2.214 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V TO220-2 |
6.480 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |