Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Milioni di parti elettroniche in magazzino. Quotazioni su prezzi e tempi di consegna entro 24 ore.

Infineon Technologies Raddrizzatori - Singoli

Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 17/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
IDH08S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1.2KV 7.5A TO220
5.022
CoolSiC™+
Silicon Carbide Schottky
1200V
7.5A (DC)
1.8V @ 7.5A
No Recovery Time > 500mA (Io)
0ns
180µA @ 1200V
380pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH08SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 8A TO220-2
6.372
CoolSiC™+
Silicon Carbide Schottky
600V
8A (DC)
2.1V @ 8A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH09SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 9A TO220-2
3.618
CoolSiC™+
Silicon Carbide Schottky
600V
9A (DC)
2.1V @ 9A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH10S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 10A TO220-2
197
CoolSiC™+
Silicon Carbide Schottky
1200V
10A (DC)
1.8V @ 10A
No Recovery Time > 500mA (Io)
0ns
240µA @ 1200V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH10SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 10A TO220-2
6.048
CoolSiC™+
Silicon Carbide Schottky
600V
10A (DC)
2.1V @ 10A
No Recovery Time > 500mA (Io)
0ns
90µA @ 600V
290pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH12SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO220-2
7.452
CoolSiC™+
Silicon Carbide Schottky
600V
12A (DC)
2.1V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
310pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDH15S120AKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 15A TO220-2
2.808
CoolSiC™+
Silicon Carbide Schottky
1200V
15A (DC)
1.8V @ 15A
No Recovery Time > 500mA (Io)
0ns
360µA @ 1200V
750pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDV02S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 2A TO220-2FP
4.824
CoolSiC™+
Silicon Carbide Schottky
600V
2A (DC)
1.9V @ 2A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV03S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO220-2FP
2.772
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
1.9V @ 3A
No Recovery Time > 500mA (Io)
0ns
30µA @ 600V
90pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
BAT6402WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 120MA SCD80-2
6.156
-
Schottky
40V
120mA
750mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 30V
6pF @ 1V, 1MHz
Surface Mount
SC-80
SCD-80
150°C (Max)
BAS3020BH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 2A SOT363-6
7.200
-
Schottky
30V
2A (DC)
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
70pF @ 1V, 1MHz
Surface Mount
6-VSSOP, SC-88, SOT-363
PG-SOT363-6
-55°C ~ 125°C
BAT54WH6327XTSA1
Infineon Technologies
DIODE SCHOTTKY 30V 200MA SOT323
5.022
-
Schottky
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)
IDB09E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO263
6.192
-
Standard
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDB15E60
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO263
4.140
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDB18E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 31A TO263-3
6.858
-
Standard
1200V
31A (DC)
2.15V @ 18A
Fast Recovery =< 500ns, > 200mA (Io)
195ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 150°C
IDB45E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 71A TO263-3
5.292
-
Standard
600V
71A (DC)
2V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-55°C ~ 175°C
IDD03E60BUMA1
Infineon Technologies
DIODE GEN PURP 600V 7.3A TO252-3
4.536
-
Standard
600V
7.3A (DC)
2V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
62ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD09E60BUMA1
Infineon Technologies
DIODE GEN PURP 600V 19.3A TO252
6.606
-
Standard
600V
19.3A (DC)
2V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDD15E60BUMA2
Infineon Technologies
DIODE GEN PURP 600V 29.2A TO252
5.004
-
Standard
600V
29.2A (DC)
2V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
87ns
50µA @ 600V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDP04E120
Infineon Technologies
DIODE GEN PURP 1.2KV 11.2A TO220
7.704
-
Standard
1200V
11.2A (DC)
2.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP06E60
Infineon Technologies
DIODE GEN PURP 600V 14.7A TO220
4.500
-
Standard
600V
14.7A (DC)
2V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDP09E120
Infineon Technologies
DIODE GEN PURP 1.2KV 23A TO220-2
8.856
-
Standard
1200V
23A (DC)
2.15V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
140ns
100µA @ 1200V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 150°C
IDP23E60
Infineon Technologies
DIODE GEN PURP 600V 41A TO220-2
7.668
-
Standard
600V
41A (DC)
2V @ 23A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
50µA @ 600V
-
Through Hole
TO-220-2
PG-TO220-2-2
-55°C ~ 175°C
IDV04S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 4A TO220-2FP
6.750
CoolSiC™+
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
130pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV05S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 5A TO220-2FP
5.526
CoolSiC™+
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
70µA @ 600V
240pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDV06S60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 6A TO220-2FP
3.436
CoolSiC™+
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
80µA @ 600V
280pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C
IDD03SG60CXTMA1
Infineon Technologies
DIODE SCHOTTKY 600V 3A TO252-3
4.536
CoolSiC™+
Silicon Carbide Schottky
600V
3A (DC)
2.3V @ 3A
No Recovery Time > 500mA (Io)
0ns
15µA @ 600V
60pF @ 1V, 1MHz
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
-55°C ~ 175°C
IDB12E120ATMA1
Infineon Technologies
DIODE GEN PURP 1.2KV 28A TO263-3
7.398
-
Standard
1200V
28A (DC)
2.15V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
100µA @ 1200V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-55°C ~ 150°C
IDB23E60ATMA1
Infineon Technologies
DIODE GEN PURP 600V 41A TO263-3
6.264
-
Standard
600V
41A (DC)
2V @ 23A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
50µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-55°C ~ 175°C
IDV30E60C
Infineon Technologies
DIODE GEN PURP 600V 21A TO22FP
5.868
-
Standard
600V
21A
2.05V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
130ns
40µA @ 600V
-
Through Hole
TO-220-2 Full Pack
PG-TO220-2 Full Pack
-55°C ~ 175°C