Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Milioni di parti elettroniche in magazzino. Quotazioni su prezzi e tempi di consegna entro 24 ore.

Infineon Technologies Raddrizzatori - Singoli

Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Loading...
Ripristina
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreInfineon Technologies
Record 720
Pagina 14/24
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
SIDC06D60C6
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
6.120
-
Standard
600V
20A (DC)
1.95V @ 20A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC06D60E6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 10A WAFER
8.820
-
Standard
600V
10A (DC)
1.25V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC06D60F6X1SA3
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
6.534
-
Standard
600V
15A (DC)
1.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60AF6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 22.5A WAFER
2.610
-
Standard
600V
22.5A (DC)
1.6V @ 22.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC07D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 15A WAFER
2.808
-
Standard
600V
15A (DC)
1.25V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
250µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC07D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 22.5A WAFER
3.096
-
Standard
600V
22.5A (DC)
1.6V @ 22.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC08D120F6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 7A WAFER
5.832
-
Standard
1200V
7A (DC)
2.1V @ 7A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC08D120H6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 10A WAFER
6.930
-
Standard
1200V
10A (DC)
1.6V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC08D60C6
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
2.844
-
Standard
600V
30A (DC)
1.95V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC08D60C6Y
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
3.006
-
Standard
600V
30A (DC)
1.95V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC09D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
2.214
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60E6 UNSAWN
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
8.928
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60E6YX1SA1
Infineon Technologies
DIODE GEN PURP 600V 20A WAFER
7.758
-
Standard
600V
20A (DC)
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC09D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
6.300
-
Standard
600V
30A (DC)
1.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC10D120H6X1SA5
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
5.652
-
Standard
1200V
15A (DC)
1.6V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC110D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 200A WAFER
7.794
-
Standard
1700V
200A (DC)
1.8V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC11D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 4A WAFER
2.358
-
Silicon Carbide Schottky
600V
4A (DC)
1.9V @ 4A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
150pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC14D120E6X1SA4
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
3.312
-
Standard
1200V
15A (DC)
1.9V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D120F6X1SA3
Infineon Technologies
DIODE GEN PURP 1.2KV 15A WAFER
6.354
-
Standard
1200V
15A (DC)
2.1V @ 15A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D120H6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
8.604
-
Standard
1200V
25A (DC)
1.6V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60C6
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
3.132
-
Standard
600V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC14D60C6Y
Infineon Technologies
DIODE GEN PURP 600V 50A WAFER
6.354
-
Standard
600V
50A (DC)
1.9V @ 50A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC14D60E6X1SA1
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
5.004
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60E6YX1SA1
Infineon Technologies
DIODE GEN PURP 600V 30A WAFER
7.434
-
Standard
600V
30A (DC)
1.25V @ 30A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC14D60F6X1SA2
Infineon Technologies
DIODE GEN PURP 600V 45A WAFER
3.870
-
Standard
600V
45A (DC)
1.6V @ 45A
Fast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 150°C
SIDC161D170HX1SA2
Infineon Technologies
DIODE GEN PURP 1.7KV 300A WAFER
8.856
-
Standard
1700V
300A (DC)
1.8V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1700V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C
SIDC16D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 5A WAFER
6.912
-
Silicon Carbide Schottky
600V
5A (DC)
1.7V @ 5A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
170pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC19D60SIC3
Infineon Technologies
DIODE SCHOTTKY 600V 6A WAFER
2.466
-
Silicon Carbide Schottky
600V
6A (DC)
1.7V @ 6A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
300pF @ 1V, 1MHz
Surface Mount
Die
Sawn on foil
-55°C ~ 175°C
SIDC20D60C6
Infineon Technologies
DIODE GEN PURP 600V 75A WAFER
7.452
-
Standard
600V
75A (DC)
1.9V @ 75A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface Mount
Die
Sawn on foil
-40°C ~ 175°C
SIDC23D120E6X1SA1
Infineon Technologies
DIODE GEN PURP 1.2KV 25A WAFER
4.158
-
Standard
1200V
25A (DC)
1.9V @ 25A
Standard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface Mount
Die
Sawn on foil
-55°C ~ 150°C