Vishay Semiconductor Diodes Division Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreVishay Semiconductor Diodes Division
Record 11.281
Pagina 188/377
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
3.060 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
7.308 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.8A TO277A |
8.352 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.8A | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 120V 20A TO220AB |
8.154 |
|
TMBS® | Schottky | 120V | 20A | 1.33V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
3.150 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 1.7A TO277A |
7.218 |
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Automotive, AEC-Q101, eSMP® | Avalanche | 200V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 200V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
7.074 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 1.7A TO277A |
5.850 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 400V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
5.472 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 1.7A TO277A |
7.650 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 600V | 1.7A | 1.9V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 72pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
6.372 |
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Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
4.122 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 800V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.4A TO277A |
3.132 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCH 1KV 1.4A TO277A |
5.670 |
|
Automotive, AEC-Q101, eSMP® | Avalanche | 1000V | 1.4A | 2.5V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 42pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
5.346 |
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- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 80V TO-263AB |
7.110 |
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- | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 20A TO220AB |
5.706 |
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TMBS® | Schottky | 150V | 20A | 1.6V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 150V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A ITO220AC |
7.596 |
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- | Standard | 50V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
8.748 |
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- | Standard | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 8A ITO220AC |
6.624 |
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- | Standard | 150V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A ITO220AC |
4.932 |
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- | Standard | 200V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A ITO220AC |
5.868 |
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- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A 150V ITO220AB |
8.136 |
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- | Schottky | 150V | 20A | 1.43V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 150V | - | Through Hole | TO-220-3 Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE FRED 1.2KV 8A TO220AC |
3.438 |
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FRED Pt® | Standard | 1200V | 8A | 2.55V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 144ns | 55µA @ 1.2kV | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
4.518 |
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FRED Pt® | Standard | 300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 8A TO263AB |
7.632 |
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FRED Pt® | Standard | 300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 300V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
7.542 |
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- | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
4.140 |
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- | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO263AB |
2.934 |
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- | Standard | 400V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO263AB |
3.960 |
|
- | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |