Toshiba Semiconductor and Storage Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreToshiba Semiconductor and Storage
Record 225
Pagina 8/8
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.400 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.256 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
7.614 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
2.034 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 10A L-FLAT |
5.994 |
|
- | Schottky | 40V | 10A (DC) | 0.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 420pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
8.046 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
5.022 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
8.568 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
3.456 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
6.534 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
7.164 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
3.490 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 10A L-FLAT |
7.398 |
|
- | Schottky | 60V | 10A (DC) | 0.58V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | 345pF @ 10V, 1MHz | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | -40°C ~ 125°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 45V 100MA ESC |
7.038 |
|
- | Schottky | 45V | 100mA | 600mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 10V | 18pF @ 0V, 1MHz | Surface Mount | SC-79, SOD-523 | ESC | -40°C ~ 100°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 100MA SC2 |
2.826 |
|
- | Schottky | 30V | 100mA | 500mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 50µA @ 30V | 9.3pF @ 0V, 1MHz | Surface Mount | 0201 (0603 Metric) | SC2 | 125°C (Max) |