Toshiba Semiconductor and Storage Raddrizzatori - Singoli

Serie

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Tipo di diodo

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Tensione - Inversione CC (Vr) (Max)

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Corrente - Media Rettificata (Io)

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Tensione - Avanti (Vf) (Max) @ If

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Velocità

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Tempo di recupero inverso (trr)

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Corrente - Perdita inversa @ Vr

Ripristina

Capacità @ Vr, F

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Tipo di montaggio

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Pacchetto / Custodia

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Pacchetto dispositivo fornitore

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Temperatura di esercizio - Giunzione

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli

ProduttoreToshiba Semiconductor and Storage

Record 225

Pagina 7/8

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo di diodo	Tensione - Inversione CC (Vr) (Max)	Corrente - Media Rettificata (Io)	Tensione - Avanti (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / Custodia	Pacchetto dispositivo fornitore	Temperatura di esercizio - Giunzione
CRS11(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	6.408	-	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CUS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	4.518	-	Schottky	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 125°C
CUS02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	2.736	-	Schottky	30V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
U1GWJ49(TE12L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A PWMINI	4.842	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	TO-243AA	PW-MINI	-40°C ~ 125°C
DSF07S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 700MA USC	4.464	-	Schottky	30V	700mA	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
DSF05S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	2.808	-	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CMH05A(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A MFLAT	41.662	-	Standard	400V	1A	1.8V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
1SS389,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA ESC	4.176	-	Schottky	40V	100mA	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10V	25pF @ 0V, 1MHz	Surface Mount	SC-79, SOD-523	ESC	125°C (Max)
DSF01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2	6.588	-	Schottky	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	9.3pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	SC2	125°C (Max)
DSR01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2	3.454	-	Schottky	30V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	700µA @ 30V	8.2pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	SC2	125°C (Max)
CBS05F30(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA CST2B	2.556	-	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	118pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	CST2B	125°C (Max)
CCS15S30,L3IDTF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C	2.538	-	Schottky	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	Surface Mount	0603 (1608 Metric)	CST2C	125°C (Max)
1SS193S,LF(D	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SMINI	2.736	-	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	8.532	-	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	7.668	-	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	6.840	-	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	4.986	-	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH03(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	2.070	-	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	4.194	-	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH05(T6L,NKOD,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	2.772	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	6.372	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	4.752	-	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH06(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	6.354	-	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH06(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	6.210	-	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH07(TE16L,NMB,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	7.020	-	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH07(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	4.770	-	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	3.454	-	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16L,PAS,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	3.366	-	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	5.580	-	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01,LFJFQ(O	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	7.236	-	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	Surface Mount	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C

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