Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 508/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 500V 5A TO-252 |
8.694 |
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HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.65Ohm @ 2.5A, 10V | 5V @ 1mA | 6.9nC @ 10V | ±30V | 370pF @ 25V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO220-3 |
2.232 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 120µA | 95nC @ 10V | ±20V | 6450pF @ 25V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V DFN5 |
2.934 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO220-3 |
4.608 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 8.5A TO-220SIS |
5.166 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 8.5A (Ta) | 10V | 860mOhm @ 4.3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9A TO-220SIS |
4.140 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Ta) | 10V | 830mOhm @ 4.5A, 10V | 4V @ 1mA | 24nC @ 10V | ±30V | 1200pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
7.002 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 200µA | 270nC @ 10V | ±20V | 21900pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 800V 11A TO220 |
2.880 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 450mOhm @ 7.1A, 10V | 3.9V @ 680µA | 85nC @ 10V | ±20V | 1600pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 60V 195A D2PAK |
4.518 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411nC @ 10V | ±20V | 13703pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 650V 24A |
3.114 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43nC @ 10V | ±30V | 1985pF @ 400V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 195A |
6.894 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.4V @ 150µA | 137nC @ 4.5V | ±20V | 8320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
2.268 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 4V @ 223µA | 167nC @ 10V | ±20V | 11550pF @ 25V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
2.952 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 4.4mOhm @ 100A, 10V | 4V @ 120µA | 95nC @ 10V | ±20V | 6450pF @ 25V | - | 179W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
2.232 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 5.3mOhm @ 100A, 10V | 3.5V @ 120µA | 91nC @ 10V | ±20V | 6540pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 800V 14A TO220 |
5.328 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 800V | 14A (Tc) | 10V | 400mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56nC @ 10V | ±20V | 2350pF @ 1000V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 60A 10-POLARPAK |
2.100 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 3V @ 250µA | 170nC @ 10V | ±20V | 8300pF @ 20V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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IXYS |
MOSFET N-CH 800V 0.1A TO-251 |
2.808 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 100mA (Tc) | 10V | 50Ohm @ 100mA, 10V | 4.5V @ 25µA | 8nC @ 10V | ±20V | 60pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
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IXYS |
MOSFET N-CH 40V 100A TO-263 |
5.364 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 250µA | 25.5nC @ 10V | ±20V | 2690pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 75V 70A TO-263 |
5.112 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 75V | 70A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 2725pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 90A TO-263 |
4.338 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 90A (Tc) | 10V | 8.4mOhm @ 25A, 10V | 4V @ 250µA | 42nC @ 10V | ±20V | 2770pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 55V 110A TO-220 |
5.130 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 6.6mOhm @ 25A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3060pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 40V 120A TO-220 |
7.200 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 6.1mOhm @ 25A, 10V | 4V @ 250µA | 58nC @ 10V | ±20V | 3240pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 650V 4A X2 TO-263 |
2.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 850mOhm @ 2A, 10V | 5V @ 250µA | 8.3nC @ 10V | ±30V | 455pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 53A 378A 5DFN |
4.752 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 53A (Ta), 378A (Tc) | 10V | 0.7mOhm @ 50A, 10V | 4V @ 250µA | 128nC @ 10V | ±20V | 8400pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 60V 15A TO-263AB |
2.574 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Ta) | 10V | 7mOhm @ 80A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 3000pF @ 25V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 18A TO263 |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92nC @ 10V | ±30V | 1640pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 25V 113A 8SON |
5.778 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta), 113A (Tc) | 4.5V, 10V | 4.5mOhm @ 25A, 10V | 2.1V @ 250µA | 8.9nC @ 4.5V | +16V, -12V | 1300pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 43A D2PAK |
3.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | ±20V | 2900pF @ 25V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 103A D2PAK |
6.120 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 103A (Tc) | - | 11.6mOhm @ 62A, 10V | 4V @ 250µA | 150nC @ 10V | - | 5380pF @ 25V | - | - | - | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO263 |
6.498 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.9mOhm @ 30A, 10V | 3.5V @ 250µA | 270nC @ 10V | ±20V | 8790pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |