Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 509/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
2.214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 3160pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 100V 78A 8PQFN |
7.722 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 78A (Tc) | 6V, 10V | 7.2mOhm @ 28A, 10V | 4V @ 150µA | 37nC @ 10V | ±20V | 2635pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 21.5A TO220 |
7.596 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.6mOhm @ 20A, 10V | 3.3V @ 250µA | 206nC @ 10V | ±20V | 10830pF @ 37.5V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO262-3 |
8.352 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 3400pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB |
7.848 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 80V 20.5A TO220 |
3.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 20.5A (Ta), 140A (Tc) | 6V, 10V | 2.7mOhm @ 20A, 10V | 3.4V @ 250µA | 224nC @ 10V | ±20V | 11135pF @ 40V | - | 2.1W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V TO-220-3 |
2.016 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 20.2A (Tc) | 10V | 199mOhm @ 10A, 10V | 3.5V @ 250µA | 74nC @ 10V | ±20V | 2950pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
TRENCH 8 80V NFET |
7.938 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 80V | 28A (Ta), 203A (Tc) | 10V | 2.1mOhm @ 50A, 10V | 4V @ 330µA | 85nC @ 10V | ±20V | 5530pF @ 40V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
SUPERFET3 650V FRFET,190M |
8.568 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 430µA | 34nC @ 10V | ±30V | 1610pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3 |
7.038 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.1mOhm @ 80A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V |
4.608 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.8mOhm @ 80A, 10V | 4V @ 250µA | 56nC @ 10V | ±20V | 2980pF @ 25V | - | 94W (Tj) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3 |
6.894 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.8mOhm @ 100A, 10V | 4V @ 140µA | 195nC @ 10V | ±20V | 15750pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Nexperia |
MOSFET N-CH 80V 120A I2PAK |
6.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.3mOhm @ 25A, 10V | 4V @ 1mA | 139nC @ 10V | ±20V | 9961pF @ 40V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 120V 100A TO262-3 |
5.328 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 100A (Tc) | 10V | 7.6mOhm @ 100A, 10V | 4V @ 130µA | 101nC @ 10V | ±20V | 6640pF @ 60V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 11A TO220-3 |
4.158 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29nC @ 10V | ±20V | 1100pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
NCH 80V 175A 2.9MOHM |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 175A (Ta) | 10V | 2.9mOhm @ 50A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 8040pF @ 40V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | ATPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 40V 47A SO8FL |
7.470 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 47A (Ta), 339A (Tc) | 4.5V, 10V | 0.75mOhm @ 50A, 10V | 2V @ 250µA | 181nC @ 10V | ±20V | 12168pF @ 25V | - | 3.2W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
3.402 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V FRFET,190M |
5.778 |
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FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 430µA | 34nC @ 10V | ±30V | 1610pF @ 400V | - | 162W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO220AB |
8.496 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 160A TO262 |
8.262 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 100V 48A TO-247 |
6.372 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 48A (Tc) | 10V | 39mOhm @ 24A, 10V | 4V @ 250µA | 62nC @ 10V | ±25V | 1800pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 120A D2PAK |
4.032 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161nC @ 10V | ±20V | 5193pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
N-CHANNEL POWERTRENCH MOSFET |
7.200 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 4.5V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 250µA | 170nC @ 10V | ±20V | 8600pF @ 20V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 123A D2PAK |
5.058 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 60V 195A D2PAK |
6.894 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | ±20V | 10034pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 30V 161A DPAK |
6.084 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4380pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A IPAK |
6.354 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
SUPERFET3 650V TO220 PKG |
3.996 |
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SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39nC @ 10V | ±30V | 1500pF @ 400V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |