Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 477/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 40V 80A 8PQFN |
7.452 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 92nC @ 10V | ±20V | 5120pF @ 25V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Rohm Semiconductor |
MOSFET N-CH 100V 30A LPTS |
7.128 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 30A (Ta) | 4V, 10V | 52mOhm @ 15A, 10V | 2.5V @ 1mA | 50nC @ 10V | ±20V | 2200pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 12A SO8FL |
8.424 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 500V 11.5A TO-220 |
8.442 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 11.5A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 1315pF @ 25V | - | 165W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET NCH 700V 9A TO263 |
6.174 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 9A (Tc) | 10V | 1.2Ohm @ 4.5A, 10V | 4.5V @ 250µA | 35nC @ 10V | ±30V | 1630pF @ 25V | - | 236W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-262 |
8.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 50A TO-220-3 |
5.580 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH TO262-3 |
5.400 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29nC @ 4.5V | ±20V | 4900pF @ 30V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 25V 54A SO8FL |
7.416 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 54A (Ta), 334A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.1V @ 250µA | 85nC @ 10V | ±20V | 5693pF @ 12V | - | 3.2W (Ta), 125W (Tc) | 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 4.5A TO-220SIS |
6.480 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
7.920 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 17A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 54µA | 19nC @ 10V | ±20V | 1500pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 42A 8SOP-ADV |
2.664 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61nC @ 10V | ±20V | 5200pF @ 10V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A 8SOP-ADV |
5.868 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 8.2mOhm @ 10A, 10V | 2.3V @ 200µA | 23nC @ 10V | ±20V | 1900pF @ 10V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE CPT |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 525V | 7A (Ta) | 10V | 1Ohm @ 3.5A, 10V | 4.5V @ 1mA | 13nC @ 10V | ±30V | 500pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 100V LFPAK |
8.532 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Ta) | 10V | 22mOhm @ 10A, 10V | - | 27nC @ 10V | ±20V | 2000pF @ 10V | - | 55W (Tc) | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 600V 8A ITO220 |
8.118 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 600mOhm @ 4A, 10V | 4V @ 250µA | 13nC @ 10V | ±30V | 743pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 30V 84A D-PAK |
7.092 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 84A (Ta) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 250µA | 56nC @ 10V | ±20V | 3845pF @ 15V | - | 83W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 1212-8 |
3.508 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 12.5mOhm @ 10A, 10V | 2.5V @ 250µA | 45nC @ 10V | ±20V | 1790pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Nexperia |
MOSFET N-CH 40V 150A TO-220 |
5.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 2.1V @ 1mA | 87.8nC @ 5V | ±20V | 9584pF @ 25V | - | 293W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 45A PG-TO220-3 |
3.942 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Tc) | 4.5V, 10V | 8.2mOhm @ 45A, 10V | 2.2V @ 35µA | 64nC @ 10V | ±16V | 4780pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 22A TO263-3 |
6.066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 22A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.2V @ 10µA | 14nC @ 10V | ±16V | 980pF @ 25V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 75A D2PAK |
6.840 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 156nC @ 10V | ±20V | 8250pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 100V 100A D2PAK |
7.776 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 5V, 10V | 8.9mOhm @ 25A, 10V | 2.1V @ 1mA | 94.3nC @ 5V | ±10V | 11650pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 40V 100A D2PAK |
4.680 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 5V, 10V | 2.4mOhm @ 25A, 10V | 2.1V @ 250µA | 80.6nC @ 32V | ±10V | 10285pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 100A D2PAK |
8.370 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 5V, 10V | 3.9mOhm @ 25A, 10V | 2.1V @ 1mA | 72nC @ 5V | ±10V | 11380pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-262 |
5.994 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CHANNEL_100+ |
3.454 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 120V 70A TO252-3 |
5.940 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 70A (Tc) | 10V | 11.1mOhm @ 70A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4355pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 7.8A TO262F |
3.114 |
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SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 7.8A (Ta), 30A (Tc) | 7V, 10V | 15.8mOhm @ 20A, 10V | 3.8V @ 250µA | 54nC @ 10V | ±25V | 3220pF @ 50V | - | 2.1W (Ta), 33W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 4A TO220F |
2.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1150pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |