Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 474/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 100V 37A TO262F |
3.490 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 100V | 37A (Tc) | 6V, 10V | 9.7mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | ±20V | 2785pF @ 50V | - | 26W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262F | TO-262-3 Full Pack, I²Pak |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N CH 80V 10.5A TO263 |
7.578 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 10.5A (Ta), 46A (Tc) | 6V, 10V | 8.9mOhm @ 20A, 10V | 3.4V @ 250µA | 38nC @ 10V | ±20V | 1871pF @ 40V | - | 2.1W (Ta), 93.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 500V 16A TO220 |
7.974 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 370mOhm @ 8A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 500V 16A TO220F |
7.560 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 370mOhm @ 8A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3.978 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 10V | 14.5mOhm @ 36A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 1380pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
LOW POWER_LEGACY |
8.784 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 45A 8SOP-ADV |
6.624 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 45A (Ta) | 4.5V, 10V | 3mOhm @ 22.5A, 10V | 2V @ 1mA | 190nC @ 10V | +20V, -25V | 7420pF @ 10V | - | 1.6W (Ta), 45W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH |
2.232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 84A (Ta), 200A (Tc) | 4.5V, 10V | 0.62mOhm @ 20A, 10V | 2.2V @ 250µA | 325nC @ 10V | ±20V | 11500pF @ 15V | - | 7.3W (Ta), 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 18A TO-220F |
3.490 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 52mOhm @ 9A, 10V | 4V @ 250µA | 51nC @ 10V | ±25V | 1500pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE CPT |
7.290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Ta) | 10V | 1.6Ohm @ 2.5A, 10V | 4.5V @ 1mA | 10.8nC @ 10V | ±30V | 320pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
7.722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Microchip Technology |
MOSFET N-CH 100V 500MA TO92-3 |
2.142 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 500mA (Tj) | 3V, 10V | 1.5Ohm @ 750mA, 10V | 2V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 25V-30V POWERDI506 |
6.030 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
CONSUMER |
6.732 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18nC @ 10V | ±20V | 761pF @ 400V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Diodes Incorporated |
MOSFET BVDSS: 61V-100V POWERDI50 |
2.100 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 80A TO263-3 |
2.142 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2.4mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | ±16V | 9750pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 40V 15A TO263 |
6.480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 15A (Ta), 220A (Tc) | 10V | 3.9mOhm @ 20A, 10V | 3.7V @ 250µA | 86nC @ 10V | ±20V | 4300pF @ 20V | - | 2.1W (Ta), 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 100A PQFN5X6 |
2.376 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.7V @ 150µA | 152nC @ 10V | ±20V | 5406pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
7.722 |
|
SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.7V @ 250µA | 115nC @ 10V | ±20V | 5300pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 43A DPAK |
3.294 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 40V 41A 235A 5DFN |
3.562 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 41A (Ta), 235A (Tc) | 10V | 1.3mOhm @ 50A, 10V | 3.5V @ 250µA | 65nC @ 10V | ±20V | 4300pF @ 25V | - | 3.8W (Ta), 128W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
|
|
|
Infineon Technologies |
MOSFET N-CH 55V 29A TO-220AB |
3.490 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 10V DRIVE CPT |
2.988 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 8A (Ta) | 10V | 950mOhm @ 4A, 10V | 4.5V @ 1mA | 15nC @ 10V | ±30V | 500pF @ 25V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | CPT3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 200V 3.3A TO-262 |
4.518 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V 7A TO262 |
8.694 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | ±30V | 372pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO252-3 |
6.102 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Tc) | 10V | 660mOhm @ 3.22A, 10V | 4.5V @ 214.55µA | 20nC @ 10V | ±20V | 543pF @ 100V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Diodes Incorporated |
MOSFET N-CH TO251 |
6.966 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 4.6A (Tc) | - | 1.3Ohm @ 2.5A, 10V | 4V @ 250µA | 13.9nC @ 10V | - | 351pF @ 50V | - | 41W (Tc) | -55°C ~ 155°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Nexperia |
MOSFET N-CHANNEL 100V 97A I2PAK |
5.220 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Ta) | 7V, 10V | 8.8mOhm @ 25A, 10V | 4V @ 1mA | 44.5nC @ 10V | ±20V | 3181pF @ 50V | - | 183W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-220-3, Short Tab |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V D2PAK |
7.542 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | ±30V | 372pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET P-CH TO263-3 |
6.966 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 150µA | 89nC @ 10V | ±20V | 6085pF @ 25V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |