Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 466/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Rohm Semiconductor |
MOSFET P-CH 12V 20A TCPT3 |
6.408 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 20A (Ta) | - | - | - | - | ±10V | - | - | 20W (Tc) | 150°C (TJ) | Surface Mount | TCPT3 | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET N CH 250V 9.3A DPAK |
6.930 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | ±20V | 705pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 250V 9.3A IPAK |
2.322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 9.3A (Tc) | 10V | 345mOhm @ 5.6A, 10V | 5V @ 50µA | 20nC @ 10V | ±20V | 705pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N CH 60V 90A I-PAK |
2.610 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130nC @ 10V | ±20V | 4360pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
8.946 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 180mOhm @ 5.6A, 10V | 4V @ 280µA | 25nC @ 10V | ±20V | 1081pF @ 400V | - | 72W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 250V 2.7A TO-220AB |
7.740 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
8.784 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 400V DPAK TO-252 |
7.254 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 400V SOT-223 |
6.804 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 40V 38A 200A 5DFN |
8.100 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2V @ 250µA | 70nC @ 10V | ±20V | 4300pF @ 20V | - | 3.8W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 40V 258A |
2.034 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 14A TO220 |
2.268 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 470mOhm @ 7A, 10V | 4V @ 250µA | 47nC @ 10V | ±30V | 2010pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 35A 185A 5DFN |
7.488 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 35A (Ta), 185A (Tc) | 10V | 1.7mOhm @ 50A, 10V | 3.5V @ 250µA | 47nC @ 10V | ±20V | 3300pF @ 25V | - | 3.8W (Ta), 106W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Infineon Technologies |
MOSFET N-CH 55V 10A DPAK |
5.094 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 3V @ 250µA | 7.9nC @ 5V | ±16V | 265pF @ 25V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A IPAK |
3.276 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 500µA | 63nC @ 10V | ±20V | 2200pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 600V DPAK |
8.028 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4V @ 250µA | 20nC @ 10V | ±30V | 810pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 80V 5DFN |
2.358 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 60V LL LFPAK |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 80µA | 34nC @ 10V | ±20V | 2200pF @ 25V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK4 (5x6) | SOT-1023, 4-LFPAK |
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ON Semiconductor |
MOSFET N-CH 30V 8.9A 8WDFN |
6.768 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta), 52A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.2V @ 250µA | 28nC @ 10V | ±20V | 1979pF @ 15V | - | 850mW (Ta), 29.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 30V 8.3A 8WDFN |
6.930 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.3A (Ta), 46A (Tc) | 4.5V, 10V | 6.2mOhm @ 20A, 10V | 2.2V @ 250µA | 22.8nC @ 10V | ±20V | 1619pF @ 15V | - | 840mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 72A TO263 |
2.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 72A (Tc) | 10V | 6.2mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.1W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 24V 100A DPAK |
5.976 |
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- | - | - | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | - | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 27A 8TDSON |
6.372 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 50A, 10V | 2V @ 250µA | 41nC @ 10V | ±20V | 2900pF @ 20V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
7.452 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 2.7V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 51nC @ 4.5V | ±12V | 3150pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 40V 100A TO-262 |
5.472 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Ta) | 10V | 3.7mOhm @ 50A, 10V | - | 100nC @ 10V | ±20V | 5550pF @ 25V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
NFET SO8FL 30V 1.15MO |
2.646 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Ta), 241A (Tc) | 4.5V, 10V | 1.15mOhm @ 30A, 10V | 2.2V @ 250µA | 82nC @ 10V | ±20V | 5780pF @ 15V | - | 3.75W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 60V SO8FL |
7.182 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 60V |
7.470 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
2.808 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
4.770 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |