Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 464/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO263-3-2 |
6.210 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4.2mOhm @ 80A, 10V | 4V @ 35µA | 43nC @ 10V | ±20V | 3440pF @ 25V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
MOSFET P-CH 30V 10A SOP8 |
8.784 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 12.6mOhm @ 10A, 10V | 2.5V @ 1mA | 39nC @ 5V | ±20V | 3600pF @ 10V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8 |
7.002 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 180nC @ 10V | ±25V | 5170pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
8.946 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 9.3mOhm @ 10.3A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 1900pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
6.408 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1330pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET |
2.268 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.7mOhm @ 13A, 10V | 2.4V @ 50µA | 17nC @ 4.5V | ±20V | 1300pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
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Infineon Technologies |
MOSFET N-CH 800V 5.7A TO251 |
7.830 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-341 | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 30V 75A DPAK |
5.976 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 7mOhm @ 25A, 10V | 4V @ 1mA | 34nC @ 10V | ±20V | 2245pF @ 25V | - | 167W (Tc) | -55°C ~ 185°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 200V 8.8A 8HVSON |
8.064 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 8.8A (Tc) | 6V, 10V | 294mOhm @ 2.6A, 10V | 4V @ 1mA | 13.3nC @ 10V | ±20V | 657pF @ 30V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333-8 | 8-VDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
4.824 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 600V 4.5A TO-220-3 |
7.776 |
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UniFET-II™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 2Ohm @ 2.25A, 10V | 5V @ 250µA | 13nC @ 10V | ±25V | 600pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 6DFN |
5.058 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 55V 2.4A MLP |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 2.4A (Ta), 15A (Tc) | 10V | 900mOhm @ 15A, 10V | 4V @ 250µA | 11.5nC @ 10V | ±20V | 350pF @ 25V | - | 2.3W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
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ON Semiconductor |
FET -20V -75A |
6.606 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
T6 60V LL DPAK |
8.100 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 18A (Ta), 89A (Tc) | 4.5V, 10V | 4.1mOhm @ 45A, 10V | 2.1V @ 250µA | 39nC @ 10V | ±20V | 2900pF @ 25V | - | 3.1W (Ta), 72W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MV POWER MOS |
7.326 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 16A SO8FL |
2.916 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 155A (Tc) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 250µA | 71.3nC @ 10V | ±20V | 4970pF @ 12V | - | 900mW (Ta), 86.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 30V 26.5A SO8FL |
4.122 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 26.5A (Ta), 207A (Tc) | 4.5V, 10V | 1.3mOhm @ 25A, 10V | 2.2V @ 1mA | 84nC @ 10V | ±20V | 6000pF @ 15V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
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Nexperia |
PSMN8R7-100YSF/SOT669/LFPAK |
3.654 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 100A | 10V | - | - | 38.5nC @ 10V | - | - | - | 198W | 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Renesas Electronics America |
MOSFET N-CH 30V 40A WPAK |
3.924 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Ta) | 4.5V, 10V | 3.9mOhm @ 20A, 10V | - | 15.7nC @ 4.5V | ±20V | 3010pF @ 10V | - | 35W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-WFDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 650V TO-251-3 |
2.178 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 10A TO262 |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4.5V @ 250µA | 33nC @ 10V | ±30V | 1645pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 12A TO262 |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 520mOhm @ 6A, 10V | 4.5V @ 250µA | 37nC @ 10V | ±30V | 1633pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
3.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 4V, 5V | 270mOhm @ 4.6A, 5V | 2V @ 250µA | 12nC @ 5V | ±10V | 490pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR N-CH |
5.742 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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ON Semiconductor |
MOSFET N-CH 60V 22A 100A 5DFN |
7.056 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 250µA | 34nC @ 10V | ±20V | 2200pF @ 50V | - | 3.7W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia |
BUK9Y1R9-40H/SOT669/LFPAK |
2.826 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 30V 70A TO-220-3 |
6.246 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 70A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 87A D2PAK |
3.186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2130pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 95A |
3.060 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 95A (Tc) | 10V | 2.5mOhm @ 57A, 10V | 3.9V @ 100µA | 132nC @ 10V | ±20V | 4549pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |