Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 12/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET P-CH 30V 2.5A SOT23-3 |
310.656 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4.5V, 10V | 78mOhm @ 3.2A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 380pF @ 15V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A SOT-23F |
165.462 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 1.2W (Ta) | 175°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Infineon Technologies |
MOSFET N-CH 30V 86A DPAK |
286.362 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23nC @ 4.5V | ±20V | 2150pF @ 15V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Rohm Semiconductor |
MOSFET N-CH 45V 3A TSMT3 |
748.014 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 3A (Ta) | 2.5V, 4.5V | 67mOhm @ 3A, 4.5V | 1.5V @ 1mA | 6.2nC @ 4.5V | ±12V | 510pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 30V 25A TO252 |
583.122 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta) | 4.5V, 10V | 34mOhm @ 20A, 10V | 3V @ 250µA | 16.2nC @ 10V | ±20V | 920pF @ 15V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 20V 14.5A 8DFN |
493.680 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 14.5A (Ta), 40A (Tc) | 1.8V, 4.5V | 9.5mOhm @ 14A, 4.5V | 900mV @ 250µA | 53nC @ 4.5V | ±8V | 4195pF @ 10V | - | 3.1W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET N-CH 40V 3A SOT23-3 |
1.191.390 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 3A (Ta) | 4.5V, 10V | 45mOhm @ 3.9A, 10V | 3V @ 250µA | 15nC @ 10V | ±20V | 540pF @ 20V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 150MA SOT23-3 |
125.028 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60pF @ 25V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 3.1A SOT-23 |
58.434 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 4.5V, 10V | 126mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | ±20V | 196pF @ 50V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET P-CH 40V 40A TO252 |
1.357.692 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 22mOhm @ 12A, 10V | 3V @ 250µA | 41nC @ 10V | ±20V | 1870pF @ 20V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Texas Instruments |
MOSFET P-CH 8V 7.4A 4-PICOSTAR |
249.858 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 8V | 7.4A (Ta) | 1.5V, 4.5V | 9.9mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5nC @ 4.5V | -6V | 1390pF @ 4V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-PICOSTAR | 4-XFLGA |
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Infineon Technologies |
MOSFET N-CH 30V 3.2A 6-TSOP |
80.112 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 3.2A (Ta) | 4.5V, 10V | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | ±20V | 210pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 60V 0.9A SOT23-3 |
2.297.370 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 900mA (Ta) | 4.5V, 10V | 400mOhm @ 900mA, 10V | 3V @ 250µA | 5.9nC @ 10V | ±20V | 219pF @ 30V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 200V 0.035A SOT23-3 |
1.287.732 |
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- | P-Channel | MOSFET (Metal Oxide) | 200V | 35mA (Ta) | 10V | 80Ohm @ 50mA, 10V | 3.5V @ 1mA | - | ±20V | 50pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A SOT23-3 |
744.342 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Tc) | 4.5V, 10V | 345mOhm @ 1.25A, 10V | 3V @ 250µA | 4.1nC @ 4.5V | ±20V | 210pF @ 30V | - | 1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET N-CH 25V 6-SON |
323.046 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 5A (Tc) | 3V, 8V | 24mOhm @ 4A, 8V | 1.55V @ 250µA | 2.8nC @ 4.5V | +10V, -8V | 340pF @ 12.5V | - | 2.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-SON | 6-SMD, Flat Leads |
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Vishay Siliconix |
MOSFET N-CH 60V 2.3A |
301.236 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 2.3A (Tc) | 4.5V, 10V | 150mOhm @ 2.3A, 10V | 2.5V @ 250µA | 5.3nC @ 10V | ±20V | 205pF @ 30V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CHAN 60V SOT23 |
253.392 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.7A (Tc) | 4.5V, 10V | 336mOhm @ 3.8A, 10V | 2.5V @ 250µA | 8.5nC @ 10V | ±20V | 265pF @ 25V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236 (SOT-23) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 2.7A SSOT-3 |
733.524 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 46mOhm @ 2.7A, 10V | 3V @ 250µA | 7nC @ 5V | ±20V | 480pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT-3 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 13.5A 8-SOIC |
632.100 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 10A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1950pF @ 20V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 12V 76A 6SON |
634.356 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 12V | 22A (Ta) | 2.5V, 4.5V | 9.3mOhm @ 5A, 4.5V | 1.1V @ 250µA | 6.6nC @ 4.5V | ±8V | 997pF @ 6V | - | 2.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WSON (2x2) | 6-VDFN Exposed Pad |
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Alpha & Omega Semiconductor |
MOSFET P-CH 60V 12A TO252 |
1.103.430 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 12A (Tc) | 4.5V, 10V | 115mOhm @ 12A, 10V | 3V @ 250µA | 20nC @ 10V | ±20V | 1185pF @ 30V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 100V 1.7A SOT-223 |
835.392 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.7A (Tc) | 5V, 10V | 350mOhm @ 850mA, 10V | 2V @ 250µA | 6nC @ 5V | ±20V | 290pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Diodes Incorporated |
MOSFET P-CH 60V 3A SOT-23-6 |
2.802.402 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 2.3A (Ta) | 4.5V, 10V | 125mOhm @ 2.3A, 10V | 1V @ 250µA | 17.7nC @ 10V | ±20V | 637pF @ 30V | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 20V 14A POWERDI |
1.693.578 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 14A (Ta), 54A (Tc) | 1.5V, 4.5V | 8mOhm @ 12A, 4.5V | 1V @ 250µA | 72nC @ 4.5V | ±8V | 6909pF @ 10V | - | 2.4W (Ta), 41W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Vishay Siliconix |
MOSFET P-CH 40V 4.4A SOT-23 |
696.498 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.4A (Tc) | 4.5V, 10V | 77mOhm @ 3.1A, 10V | 2.5V @ 250µA | 21nC @ 10V | ±20V | 595pF @ 20V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 6A CHIPFET |
302.196 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Tc) | 2.5V, 4.5V | 36mOhm @ 4.9A, 4.5V | 1.4V @ 250µA | 38nC @ 10V | ±12V | 1000pF @ 10V | - | 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET™ | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 20V 3.4A SOT23-3 |
43.902 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 2.5V, 4.5V | 60mOhm @ 3.4A, 4.5V | 700mV @ 250µA | 6.6nC @ 4.5V | ±12V | 544pF @ 10V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 100V 0.6A SOT23-3 |
2.489.982 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 600mA (Ta) | 6V, 10V | 1Ohm @ 600mA, 10V | 4V @ 250µA | 3.5nC @ 10V | ±20V | 141pF @ 50V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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STMicroelectronics |
MOSFET P-CH 30V 4A SOT23-6 |
22.800 |
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DeepGATE™, STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 56mOhm @ 2A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | ±20V | 639pF @ 25V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 |