Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 24/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO252-2 |
205.836 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 13.5A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 251pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 8A TO220AC |
46.446 |
|
- | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220FP |
13.608 |
|
SWITCHMODE™ | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-3 Full Pack | TO-220FP | -65°C ~ 150°C |
|
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2.5A SMB |
28.740 |
|
- | Silicon Carbide Schottky | 1200V | 2.5A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 1200V | 69pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
52.656 |
|
HEXFRED® | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
|
|
|
STMicroelectronics |
DIODE SCHTY SIC 650V 10A D2PAK |
13.470 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
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|
Texas Instruments |
DIODE GEN PURP 30V 15A DDPAK |
157.992 |
|
- | Standard | 30V | 15A | 26mV @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 300nA @ 28V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | DDPAK/TO-263-3 | -40°C ~ 125°C |
|
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|
IXYS |
DIODE GEN PURP 1.2KV 17A TO220AC |
3.299 |
|
- | Standard | 1200V | 17A | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO220-2 |
148.722 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO252-2 |
53.904 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 167pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO263AB |
20.262 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220INS |
57.114 |
|
- | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
|
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|
Microsemi |
DIODE GEN PURP 400V 400MA DO35 |
26.898 |
|
- | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 2A DO214AA |
24.702 |
|
- | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 1200V | 131pF @ 1V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 40A TO247 |
21.996 |
|
- | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 30A TO247AC |
75.432 |
|
FRED Pt® | Standard | 300V | 30A | 1.25V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 60µA @ 300V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-F2 |
87.990 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 7.5A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220-F2 | -55°C ~ 175°C |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-2 |
56.328 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 19A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 294pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO263-2 |
52.392 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 19A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 295pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 1KV 30A TO247AD |
21.132 |
|
- | Standard | 1000V | 30A | 2.4V @ 36A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 750µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO252 |
15.528 |
|
- | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO252AA |
12.435 |
|
- | Standard | 200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 1KV 80A TO247 |
22.896 |
|
- | Standard | 1000V | 80A | 1.9V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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|
ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
15.732 |
|
- | Standard | 600V | 50A | 1.6V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 400MA DO35 |
21.960 |
|
- | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 40A TO247AC |
14.400 |
|
- | Standard | 800V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
87.396 |
|
- | Standard | 1200V | 40A | 1.1V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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|
IXYS |
DIODE GEN PURP 1.2KV 30A TO247AD |
27.108 |
|
HiPerFRED™ | Standard | 1200V | 30A | 2.74V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 8A TO263-2 |
14.994 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 441pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
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|
IXYS |
DIODE GEN PURP 600V 60A TO247AD |
30.600 |
|
- | Standard | 600V | 60A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 200µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |