Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 25/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7.922 |
|
- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
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STMicroelectronics |
DIODE GEN PURP 600V 30A DOP3I |
24.978 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
|
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Infineon Technologies |
DIODE SCHOTKY 650V 10A TO220-2-1 |
19.116 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO263-2 |
59.970 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 29A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO220-2 |
31.236 |
|
Z-Rec® | Silicon Carbide Schottky | 600V | 30A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 32A TO252-2 |
44.586 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 32A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 460.5pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO220AC |
56.334 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
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STMicroelectronics |
DIODE GEN PURP 400V 60A DO247 |
15.726 |
|
- | Standard | 400V | 60A | 1.2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 5A TO252-2 |
54.942 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8.2A TO220 |
17.826 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 19A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 1200V | 390pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
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|
IXYS |
DIODE GEN PURP 1.2KV 75A TO247AD |
1 |
|
- | Standard | 1200V | 75A | 1.8V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 3mA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
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STMicroelectronics |
DIODE GEN PURP 1KV 60A DO247 |
29.784 |
|
- | Standard | 1000V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 20µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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|
IXYS |
DIODE GEN PURP 1.8KV 40A TO247AD |
6.264 |
|
SONIC-FRD™ | Standard | 1800V | 40A | 2.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 100µA @ 1800V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
17.580 |
|
- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO220AC |
33.894 |
|
- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACFP | 175°C (Max) |
|
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|
Microsemi |
DIODE SCHOTTKY 200V 120A TO247 |
56.868 |
|
- | Schottky | 200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A AXIAL |
3.622 |
|
- | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GP 400V 150A POWIRTAB |
25.026 |
|
- | Standard | 400V | 150A | 1.3V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 93ns | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | -55°C ~ 175°C |
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Microsemi |
DIODE SCHOTTKY 20V 75MA DO35 |
17.147 |
|
- | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 20A TO220FM |
2 |
|
- | Silicon Carbide Schottky | 650V | 20A | 1.55V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
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Microsemi |
DIODE GEN PURP 150V 1A D5A |
7.748 |
|
- | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 40A DO203AB |
275 |
|
- | Standard, Reverse Polarity | 100V | 40A | 1.3V @ 126A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
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|
IXYS |
DIODE GEN PURP 1.8KV 63A TO247AD |
2 |
|
- | Standard | 1800V | 63A | 4.1V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 2mA @ 1800V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
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|
IXYS |
DIODE GEN PURP 1.8KV 60A TO247AD |
23.100 |
|
- | Standard | 1800V | 60A | 2.04V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 230ns | 200µA @ 1800V | 32pF @ 1200V, 1MHz | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 150°C |
|
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|
Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8A TO220-2 |
25.902 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8A TO252-2 |
22.758 |
|
Z-Rec® | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 3V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 1200V | 560pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | -55°C ~ 175°C |
|
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Microsemi |
DIODE GEN PURP 75V 300MA D5D |
16.554 |
|
- | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 16A TO247AC |
16.775 |
|
Automotive, AEC-Q101 | Standard | 1200V | 16A | 3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 20µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
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Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
15.936 |
|
- | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 15V 150MA DO35 |
43 |
|
- | Standard | 15V | 150mA (DC) | 1.07V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 10pA @ 15V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |