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Microsemi Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 36/86
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
1N6074US
Microsemi
DIODE GEN PURP 100V 3A D5A
6.840
-
Standard
100V
3A
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 100V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 155°C
JAN1N5523BUR-1
Microsemi
RECTIFIER
8.262
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5819-1
Microsemi
DIODE SCHOTTKY 45V 1A DO41
9.015
Military, MIL-PRF-19500/586
Schottky
45V
1A
490mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 45V
70pF @ 5V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 125°C
JANTXV1N5188
Microsemi
DIODE GEN PURP 400V 3A AXIAL
7.686
Military, MIL-PRF-19500/297
Standard
400V
3A
1.5V @ 9A
Standard Recovery >500ns, > 200mA (Io)
-
2µA @ 400V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
JANTX1N6621
Microsemi
DIODE GEN PURP 440V 2A AXIAL
4.183
Military, MIL-PRF-19500/585
Standard
440V
2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 440V
10pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
JANTX1N6640
Microsemi
DIODE GEN PURP 50V 300MA AXIAL
6.180
Military, MIL-PRF-19500/609
Standard
50V
300mA
1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
100nA @ 50V
-
Through Hole
D, Axial
-
-65°C ~ 175°C
1N6073US
Microsemi
DIODE GEN PURP 50V 3A D5A
4.590
-
Standard
50V
3A
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 50V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 155°C
1N6075US
Microsemi
DIODE GEN PURP 150V 3A D5A
4.050
-
Standard
150V
3A
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 150V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 155°C
JANTX1N6621U
Microsemi
DIODE GEN PURP 400V 1.2A A-MELF
2.736
Military, MIL-PRF-19500/585
Standard
400V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N5550US
Microsemi
DIODE GEN PURP 200V 5A D5B
3.456
Military, MIL-PRF-19500/420
Standard
200V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N5551US
Microsemi
DIODE GEN PURP 400V 3A B-MELF
5.094
Military, MIL-PRF-19500/420
Standard
400V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 400V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTX1N6622US
Microsemi
DIODE GEN PURP 660V 2A D5A
1.975
Military, MIL-PRF-19500/585
Standard
660V
2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 660V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N5617US
Microsemi
DIODE GEN PURP 400V 1A A-MELF
8.856
Military, MIL-PRF-19500/429
Standard
400V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
500nA @ 400V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JANTX1N6620US
Microsemi
DIODE GEN PURP 220V 2A D5A
8.118
Military, MIL-PRF-19500/585
Standard
220V
2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTX1N6623
Microsemi
DIODE GEN PURP 880V 1A AXIAL
6.120
Military, MIL-PRF-19500/585
Standard
880V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 880V
10pF @ 10V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 150°C
JAN1N5553US
Microsemi
DIODE GEN PURP 800V 3A B-MELF
8.514
Military, MIL-PRF-19500/420
Standard
800V
3A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N5190
Microsemi
DIODE GEN PURP 600V 3A AXIAL
4.608
Military, MIL-PRF-19500/297
Standard
600V
3A
1.5V @ 9A
Standard Recovery >500ns, > 200mA (Io)
-
2µA @ 600V
-
Through Hole
B, Axial
Axial
-65°C ~ 175°C
1N6541
Microsemi
DIODE RECT ULT FAST REC A-PKG
6.354
*
-
-
-
-
-
-
-
-
-
-
-
-
JAN1N3645
Microsemi
DIODE GEN PURP 1.4KV 250MA AXIAL
5.832
Military, MIL-PRF-19500/279
Standard
1400V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1400V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
JAN1N3646
Microsemi
DIODE GP 1.75KV 250MA AXIAL
6.300
Military, MIL-PRF-19500/279
Standard
1750V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 1750V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
JANTX1N6073
Microsemi
DIODE GEN PURP 50V 850MA AXIAL
7.956
Military, MIL-PRF-19500/503
Standard
50V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 50V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
JANTX1N6626
Microsemi
DIODE GEN PURP 220V 1.75A AXIAL
5.418
Military, MIL-PRF-19500/590
Standard
220V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 220V
40pF @ 10V, 1MHz
Through Hole
E, Axial
-
-65°C ~ 150°C
JANTX1N6622U
Microsemi
DIODE GEN PURP 600V 1.2A A-MELF
6.012
Military, MIL-PRF-19500/585
Standard
600V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTX1N5550US
Microsemi
DIODE GEN PURP 200V 5A B-MELF
5.922
Military, MIL-PRF-19500/420
Standard
200V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 200V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N6663
Microsemi
RECTIFIER DIODE
4.680
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5284-1
Microsemi
CURRENT REGULATOR DIODE
3.528
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5622US
Microsemi
DIODE GEN PURP 1KV 1A D5A
8.406
Military, MIL-PRF-19500/427
Standard
1000V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 1000V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
1N5286-1
Microsemi
CURRENT REGULATOR DIODE
3.132
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5287-1
Microsemi
CURRENT REGULATOR DIODE
7.542
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5288-1
Microsemi
CURRENT REGULATOR DIODE
4.770
*
-
-
-
-
-
-
-
-
-
-
-
-