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Microsemi Raddrizzatori - Singoli

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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
ProduttoreMicrosemi Corporation
Record 2.560
Pagina 35/86
Immagine
Numero parte
Produttore
Descrizione
Disponibile
Quantità
Serie
Tipo di diodo
Tensione - Inversione CC (Vr) (Max)
Corrente - Media Rettificata (Io)
Tensione - Avanti (Vf) (Max) @ If
Velocità
Tempo di recupero inverso (trr)
Corrente - Perdita inversa @ Vr
Capacità @ Vr, F
Tipo di montaggio
Pacchetto / Custodia
Pacchetto dispositivo fornitore
Temperatura di esercizio - Giunzione
JANTXV1N5623
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
3.672
Military, MIL-PRF-19500/429
Standard
1000V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
500nA @ 1000V
15pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTX1N5418US
Microsemi
DIODE GEN PURP 400V 3A D5B
5.148
Military, MIL-PRF-19500/411
Standard
400V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
2µA @ 400V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
1N6074
Microsemi
DIODE GEN PURP 100V 850MA AXIAL
3.472
-
Standard
100V
850mA
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 100V
-
Through Hole
A, Axial
-
-65°C ~ 155°C
JANTX1N5551US
Microsemi
DIODE GEN PURP 400V 5A B-MELF
6.138
Military, MIL-PRF-19500/420
Standard
400V
5A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 400V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N6539
Microsemi
DIODE RECT ULT FAST REC A-PKG
2.196
*
-
-
-
-
-
-
-
-
-
-
-
-
1N5552US
Microsemi
DIODE GEN PURP 600V 3A D5B
5.886
-
Standard
600V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 600V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
JANTXV1N5416US
Microsemi
DIODE GEN PURP 100V 3A D5B
8.208
Military, MIL-PRF-19500/411
Standard
100V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 100V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
1N3643
Microsemi
DIODE GEN PURP 1KV 250MA AXIAL
2.232
-
Standard
1000V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1000V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
1N3645
Microsemi
DIODE GEN PURP 1.4KV 250MA AXIAL
2.862
-
Standard
1400V
250mA
5V @ 250mA
Standard Recovery >500ns, > 200mA (Io)
-
100µA @ 1400V
-
Through Hole
S, Axial
S, Axial
-65°C ~ 175°C
JANTXV1N6620
Microsemi
DIODE GEN PURP 220V 1.2A AXIAL
7.002
Military, MIL-PRF-19500/585
Standard
220V
1.2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 220V
-
Through Hole
A, Axial
-
-65°C ~ 150°C
JANTX1N5623
Microsemi
DIODE GEN PURP 1KV 1A AXIAL
28
Military, MIL-PRF-19500/429
Standard
1000V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
500nA @ 1000V
15pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
1N6662US
Microsemi
RECTIFIER DIODE
5.526
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTX1N6623US
Microsemi
DIODE GEN PURP 880V 1A D5A
6.156
Military, MIL-PRF-19500/585
Standard
880V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 880V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JAN1N6630
Microsemi
DIODE GEN PURP 900V 1.4A AXIAL
3.996
Military, MIL-PRF-19500/590
Standard
900V
1.4A
1.4V @ 1.4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
2µA @ 900V
-
Through Hole
E, Axial
-
-65°C ~ 150°C
JANTX1N5420US
Microsemi
DIODE GEN PURP 600V 3A D5B
3.456
Military, MIL-PRF-19500/411
Standard
600V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
1µA @ 600V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
1N6540
Microsemi
DIODE RECT ULT FAST REC A-PKG
7.074
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N4946
Microsemi
DIODE GEN PURP 600V 1A AXIAL
2.952
Military, MIL-PRF-19500/359
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 600V
25pF @ 12V, 1MHz
Through Hole
A, Axial
-
-65°C ~ 175°C
JANTXV1N6641US
Microsemi
DIODE GEN PURP 50V 300MA D-MELF
8.028
Military, MIL-PRF-19500/609
Standard
50V
300mA
1.1V @ 200mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
100nA @ 50V
-
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
JANTX1N6625US
Microsemi
DIODE GEN PURP 1.1KV 1A D5A
6.804
Military, MIL-PRF-19500/585
Standard
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
500nA @ 1100V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N5553
Microsemi
DIODE GEN PURP 800V 5A AXIAL
2.736
Military, MIL-PRF-19500/420
Standard
800V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 800V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
1N6549
Microsemi
DIODE RECT ULT FAST REC A-PKG
3.562
*
-
-
-
-
-
-
-
-
-
-
-
-
JANTXV1N5623US
Microsemi
DIODE GEN PURP 1KV 1A D5A
6.318
Military, MIL-PRF-19500/429
Standard
1000V
1A
1.6V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
500nA @ 1000V
15pF @ 12V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 175°C
JAN1N6621US
Microsemi
DIODE GEN PURP 440V 2A D5A
7.110
Military, MIL-PRF-19500/116
Standard
75V
200mA
1.2V @ 100mA
Small Signal =< 200mA (Io), Any Speed
20ns
500nA @ 75V
2.8pF @ 1.5V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
JAN1N6624US
Microsemi
DIODE GEN PURP 990V 1A D5A
8.226
Military, MIL-PRF-19500/585
Standard
990V
1A
1.55V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
500nA @ 990V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JAN1N6625US
Microsemi
DIODE GEN PURP 1.1KV 1A D5A
7.794
Military, MIL-PRF-19500/585
Standard
1100V
1A
1.75V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
1µA @ 1100V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTX1N6621US
Microsemi
DIODE GEN PURP 440V 2A D5A
2.682
Military, MIL-PRF-19500/585
Standard
440V
2A
1.4V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
500nA @ 440V
10pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 150°C
JANTXV1N3595AUS
Microsemi
DIODE GEN PURP 125V 150MA
5.310
Military, MIL-PRF-19500/241
Standard
125V
150mA
920mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
3µs
2nA @ 125V
-
Surface Mount
DO-213AA (Glass)
DO-213AA
-65°C ~ 175°C
JANTX1N4946
Microsemi
DIODE GEN PURP 600V 1A AXIAL
6.514
Military, MIL-PRF-19500/359
Standard
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
1µA @ 600V
-
Through Hole
A, Axial
-
-65°C ~ 175°C
JAN1N6074
Microsemi
DIODE GEN PURP 100V 3A AXIAL
6.822
Military, MIL-PRF-19500/503
Standard
100V
3A
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 100V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C
JAN1N6075
Microsemi
DIODE GEN PURP 150V 3A AXIAL
8.460
Military, MIL-PRF-19500/503
Standard
150V
3A
2.04V @ 9.4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
1µA @ 150V
-
Through Hole
A, Axial
A-PAK
-65°C ~ 155°C