Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo

Serie

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Tipo FET

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Tecnologia

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Tensione Drain to Source (Vdss)

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Corrente - Scarico continuo (Id) @ 25 ° C

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Tensione inverter (Max Rds On, Min Rds On)

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Rds On (Max) @ Id, Vgs

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Vgs (th) (Max) @ Id

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Gate Charge (Qg) (Max) @ Vgs

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Vgs (massimo)

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Capacità di ingresso (Ciss) (Max) @ Vds

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Funzione FET

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Dissipazione di potenza (max)

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Temperatura di esercizio

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Tipo di montaggio

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Pacchetto dispositivo fornitore

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Pacchetto / Custodia

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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo

ProduttoreToshiba Semiconductor and Storage

Record 786

Pagina 12/27

Numero parte	Produttore	Descrizione	Disponibile	Serie	Tipo FET	Tecnologia	Tensione Drain to Source (Vdss)	Corrente - Scarico continuo (Id) @ 25 ° C	Tensione inverter (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (massimo)	Capacità di ingresso (Ciss) (Max) @ Vds	Funzione FET	Dissipazione di potenza (max)	Temperatura di esercizio	Tipo di montaggio	Pacchetto dispositivo fornitore	Pacchetto / Custodia
TK3R1A04PL,S4X	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	4.554	U-MOSIX-H	N-Channel	MOSFET (Metal Oxide)	40V	82A (Tc)	4.5V, 10V	3.8mOhm @ 30A, 4.5V	2.4V @ 500µA	63.4nC @ 10V	±20V	4670pF @ 20V	-	36W (Tc)	175°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK58E06N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 60V 58A TO-220	7.560	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	60V	58A (Ta)	10V	5.4mOhm @ 29A, 10V	4V @ 500µA	46nC @ 10V	±20V	3400pF @ 30V	-	110W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK58A06N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 58A TO-220	8.874	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	60V	58A (Tc)	10V	5.4mOhm @ 29A, 10V	4V @ 500µA	46nC @ 10V	±20V	3400pF @ 30V	-	35W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK22E10N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 100V 52A TO220	8.442	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	100V	52A (Tc)	10V	13.8mOhm @ 11A, 10V	4V @ 300µA	28nC @ 10V	±20V	1800pF @ 50V	-	72W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK22A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 52A TO-220	5.526	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	100V	22A (Tc)	10V	13.8mOhm @ 11A, 10V	4V @ 300µA	28nC @ 10V	±20V	1800pF @ 50V	-	30W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK34E10N1,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 75A TO-220	8.028	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	100V	75A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38nC @ 10V	±20V	2600pF @ 50V	-	103W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK34A10N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 34A TO-220	6.564	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	100V	34A (Tc)	10V	9.5mOhm @ 17A, 10V	4V @ 500µA	38nC @ 10V	±20V	2600pF @ 50V	-	35W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK5A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5.2A TO-220SIS	6.408	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	5.2A (Ta)	10V	1.2Ohm @ 2.6A, 10V	3.5V @ 170µA	10.5nC @ 10V	±30V	380pF @ 300V	-	30W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK10A60E,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V TO220SIS	5.382	-	N-Channel	MOSFET (Metal Oxide)	600V	10A (Ta)	10V	750mOhm @ 5A, 10V	4V @ 1mA	40nC @ 10V	±30V	1300pF @ 25V	-	45W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK72E08N1,S1X	Toshiba Semiconductor and Storage	MOSFET N CH 80V 72A TO-220	2.376	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	80V	72A (Ta)	10V	4.3mOhm @ 36A, 10V	4V @ 1mA	81nC @ 10V	±20V	5500pF @ 40V	-	192W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK10E60W,S1VX	Toshiba Semiconductor and Storage	MOSFET N CH 600V 9.7A TO-220	6.030	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	9.7A (Ta)	10V	380mOhm @ 4.9A, 10V	3.7V @ 500µA	20nC @ 10V	±30V	700pF @ 300V	Super Junction	100W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK14N65W,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220	5.850	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	3.5V @ 690µA	35nC @ 10V	±30V	1300pF @ 300V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-247	TO-247-3
TK28A65W,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 27.6A TO-220SIS	8.676	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	27.6A (Ta)	10V	110mOhm @ 13.8A, 10V	3.5V @ 1.6mA	75nC @ 10V	±30V	3000pF @ 300V	-	45W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK31E60X,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 30.8A TO-220	5.310	DTMOSIV-H	N-Channel	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	88mOhm @ 9.4A, 10V	3.5V @ 1.5mA	65nC @ 10V	±30V	3000pF @ 300V	Super Junction	230W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK290P65Y,RQ	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 11.5A DPAK	7.182	DTMOSV	N-Channel	MOSFET (Metal Oxide)	650V	11.5A (Tc)	10V	290mOhm @ 5.8A, 10V	4V @ 450µA	25nC @ 10V	±30V	730pF @ 300V	-	100W (Tc)	150°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
TK32A12N1,S4X	Toshiba Semiconductor and Storage	MOSFET N-CH 120V 32A TO-220	8.118	U-MOSVIII-H	N-Channel	MOSFET (Metal Oxide)	120V	32A (Tc)	10V	13.8mOhm @ 16A, 10V	4V @ 500µA	34nC @ 10V	±20V	2000pF @ 60V	-	30W (Tc)	150°C (TJ)	Through Hole	TO-220SIS	TO-220-3 Full Pack
TK14E65W,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 13.7A TO-220	6.678	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	650V	13.7A (Ta)	10V	250mOhm @ 6.9A, 10V	3.5V @ 690µA	35nC @ 10V	±30V	1300pF @ 300V	-	130W (Tc)	150°C (TJ)	Through Hole	TO-220	TO-220-3
TK31J60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 30.8A TO-3P(N)	8.298	DTMOSIV	N-Channel	MOSFET (Metal Oxide)	600V	30.8A (Ta)	10V	88mOhm @ 15.4A, 10V	3.7V @ 1.5mA	86nC @ 10V	±30V	3000pF @ 300V	Super Junction	230W (Tc)	150°C (TJ)	Through Hole	TO-3P(N)	TO-3P-3, SC-65-3
SSM3J15F,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS=-3	8.568	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K35CT,L3F	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS=20	7.344	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J15FS,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS=-3	7.290	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J66MFV,L3F	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS-20	7.362	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K48FU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS30V	8.334	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6J412TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS=-2	2.412	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6J422TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS-20	2.556	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM6K405TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS20V	2.628	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3J135TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET P-CH VDSS-20	3.726	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K127TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS30V	2.052	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM5H90ATU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS60V	3.526	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SSM3K122TU,LF	Toshiba Semiconductor and Storage	SMALL SIGNAL MOSFET N-CH VDSS20V	4.986	*	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo

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