Toshiba Semiconductor and Storage Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
ProduttoreToshiba Semiconductor and Storage
Record 786
Pagina 1/27
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA VESM |
674.142 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | ±10V | 46pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 6A 2-3Z1A |
258.174 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2nC @ 4.5V | ±12V | 560pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F |
376.188 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | ±8V | 840pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT-23F |
619.464 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | +10V, -20V | 330pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 3.5A 2-3Z1A |
3.958.194 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 1.8V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | ±12V | 123pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A SOT23F |
596.922 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 8V | 17.6mOhm @ 6A, 8V | 1V @ 1mA | 19.5nC @ 4.5V | ±10V | 1400pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A SOT23 |
559.686 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3.3V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | - | ±20V | 150pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.4A UFM |
278.262 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 1.5V, 4.5V | 25.8mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A SOT-23F |
165.462 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 1.2W (Ta) | 175°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
130.638 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 630mW (Ta), 86W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 92A TSON |
947.442 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 92A (Tc) | 4.5V, 10V | 3.7mOhm @ 46A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 960mW (Ta), 81W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK |
75.804 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | ±20V | 2050pF @ 10V | - | 125W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 150A 8SOP |
89.892 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 110nC @ 10V | ±20V | 10000pF @ 15V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP |
51.564 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.3V @ 1mA | 74nC @ 10V | ±20V | 6900pF @ 15V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP |
39.402 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A 8DSOP |
47.010 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Tc) | 10V | 4.5mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
42.594 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 60V | 260A (Tc) | 4.5V, 10V | 1.29mOhm @ 50A, 10V | 2.5V @ 1mA | 91nC @ 10V | ±20V | 8100pF @ 30V | - | 960mW (Ta), 170W (Tc) | 175°C | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A T0247 |
21.390 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135nC @ 10V | ±30V | 4100pF @ 300V | - | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A |
121.998 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A SOT23 |
656.850 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.4A |
253.044 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
LOAD SWITCH CURRENT REDUCTION |
21.858 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | ±20V | 40pF @ 10V | - | 150mW (Ta) | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A VESM |
141.240 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM |
134.478 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A |
87.708 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A U-MOS III |
569.142 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM |
73.968 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.5V, 4.5V | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.25A CST3C |
105.312 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM |
1.362.366 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA SSM |
29.352 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | ±10V | 46pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |