Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 971/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3.024 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7.668 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
6.642 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 500V 7.1A TO251-3 |
5.922 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 7.1A (Tc) | 10V | 520mOhm @ 3.8A, 10V | 3.5V @ 250µA | 17nC @ 10V | ±20V | 680pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH |
4.788 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
6.732 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
5.004 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH |
5.166 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 600V 4.5A TO252-3 |
4.878 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252-3 |
5.040 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27nC @ 10V | ±20V | 790pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO262-3 |
7.974 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 900V 11A TO220-3 |
3.418 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO262-3 |
8.856 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO251-3 |
3.042 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17nC @ 10V | ±20V | 400pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Vishay Siliconix |
MOSFET N-CH 30V 14.6A 8SOIC |
6.570 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14.6A (Tc) | 4.5V, 10V | 13mOhm @ 15A, 10V | 2.5V @ 1mA | 28nC @ 10V | ±20V | 1084pF @ 15V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 30V 7A PWRDI3333-8 |
3.400 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 13mOhm @ 11.2A, 10V | 2.2V @ 250µA | 44.6nC @ 10V | ±12V | 1886pF @ 15V | Schottky Diode (Body) | 980mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Nexperia |
PMPB100ENEA/SOT1220/SOT1220 |
5.922 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Nexperia |
PMPB16XNEA/SOT1220/SOT1220 |
5.904 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Nexperia |
PMPB25ENEA/SOT1220/SOT1220 |
7.398 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 24mOhm @ 7.2A, 10V | 2.5V @ 250µA | 19nC @ 10V | ±20V | 607pF @ 15V | - | 2.08W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Nexperia |
PMPB50ENEA/SOT1220/SOT1220 |
6.822 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 43mOhm @ 5.1A, 10V | 2.5V @ 250µA | 10nC @ 10V | ±20V | 271pF @ 15V | - | 1.9W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Microsemi |
MOSFET N-CH 700V TO247 |
8.262 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 110A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 700V SOT227 |
6.390 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 78A (Tc) | 20V | 45mOhm @ 60A, 20V | 2.4V @ 1mA | 270nC @ 20V | +25V, -10V | 3950pF @ 700V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 700V TO247 |
6.390 |
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- | N-Channel | SiCFET (Silicon Carbide) | 700V | 35A (Tc) | 20V | 145mOhm @ 10A, 20V | 2.5V @ 1mA | 67nC @ 20V | +25V, -10V | 1035pF @ 700V | - | 176W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 700V D3PAK |
8.766 |
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- | - | SiCFET (Silicon Carbide) | 700V | 35A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 700V TO247 |
5.436 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 5A (Tc) | 20V | 1.25Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21nC @ 20V | +25V, -10V | 249pF @ 1000V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 700V D3PAK |
2.196 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 4.6A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.2V @ 500µA | 29nC @ 20V | +25V, -10V | 325pF @ 1000V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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ON Semiconductor |
MOSFET N-CH TRENCH PTNG 100V |
8.712 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 240A (Tc) | 10V | 2.6mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5120pF @ 50V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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ON Semiconductor |
MOSFET P-CH PWR TRENCH PT8-40V |
2.718 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 4.9mOhm @ 80A, 10V | 3V @ 250µA | 107nC @ 10V | ±16V | 4840pF @ 20V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 650V 27 MOHM TO247 P |
6.030 |
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FRFET®, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 7.5mA | 259nC @ 10V | ±30V | 7690pF @ 400V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 30V 54A DPAK |
7.038 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 54A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2.5V @ 250µA | 21nC @ 11.5V | ±20V | 1350pF @ 12V | - | 1.4W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |