Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 936/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO251 |
4.284 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5nC @ 10V | ±20V | 440pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO251 |
7.362 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | ±20V | 280pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
3.456 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3 |
2.988 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
7.290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 250µA | 172nC @ 10V | ±20V | 5300pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 100A TO220-3 |
8.136 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 3.3mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 6000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 100A TO220-3 |
4.986 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 100A (Tc) | 10V | 5mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5110pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO220-3 |
8.946 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | 4V @ 250µA | 148nC @ 10V | ±20V | 4400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO220-3 |
7.884 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 13A PG-TO252 |
5.958 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 13A (Tc) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6nC @ 10V | ±20V | 773pF @ 100V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 9.2A TO252 |
5.580 |
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CoolMOS™ E6 | N-Channel | MOSFET (Metal Oxide) | 600V | 9.2A (Tc) | 10V | 450mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28nC @ 10V | ±20V | 620pF @ 100V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 8.1A TO252 |
8.730 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 600V | 8.1A (Tc) | 10V | 520mOhm @ 2.8A, 10V | 3.5V @ 230µA | 23.4nC @ 10V | ±20V | 512pF @ 100V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 650V 10.6A TO252-3 |
4.968 |
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CoolMOS™ C6 | N-Channel | MOSFET (Metal Oxide) | 650V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | ±20V | 710pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
5.184 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 4.3A (Tc) | - | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13nC @ 10V | - | 280pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 600V TO-251-3 |
8.640 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | - | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | - | 200pF @ 100V | - | - | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Renesas Electronics America |
MOSFET N-CH 500V 20A TO3P |
4.374 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Ta) | 10V | 270mOhm @ 10A, 10V | - | - | ±30V | 3050pF @ 10V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO220AB |
3.526 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4V, 10V | 7.3mOhm @ 40A, 10V | - | 50nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta), 84W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 80A TO220AB |
8.568 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4V, 10V | 7.3mOhm @ 40A, 10V | - | 50nC @ 10V | ±20V | 2800pF @ 10V | - | 1.5W (Ta), 84W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
6.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 83A (Tc) | 4V, 10V | 5.6mOhm @ 42A, 10V | - | 110nC @ 10V | ±20V | 6100pF @ 10V | - | 1.5W (Ta), 100W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 40V 83A TO220AB |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 83A (Tc) | 4V, 10V | 5.6mOhm @ 42A, 10V | - | 110nC @ 10V | ±20V | 6100pF @ 10V | - | 1.5W (Ta), 100W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 100V LDPAK |
4.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Ta) | 4.5V, 10V | 10mOhm @ 37.5A, 10V | - | 155nC @ 10V | ±20V | 9700pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 100V LDPAK |
2.754 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Ta) | 4.5V, 10V | 10mOhm @ 37.5A, 10V | - | 155nC @ 10V | ±20V | 9700pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | 4-LDPAK | SC-83 |
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Renesas Electronics America |
MOSFET N-CH 8SO |
3.798 |
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- | N-Channel | MOSFET (Metal Oxide) | 350V | 900mA (Ta) | 4V, 10V | 3Ohm @ 450mA, 10V | - | 20nC @ 10V | ±20V | 460pF @ 25V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH WPAK |
3.562 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 17A (Ta) | 10V | 94mOhm @ 8.5A, 10V | - | 26nC @ 10V | ±30V | 1200pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH WPAK |
6.534 |
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- | N-Channel | MOSFET (Metal Oxide) | 150V | 14A (Ta) | 10V | 110mOhm @ 7A, 10V | - | 15nC @ 10V | ±30V | 710pF @ 25V | - | 25W (Tc) | 150°C (TJ) | Surface Mount | 8-WPAK | 8-PowerWDFN |
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Renesas Electronics America |
MOSFET N-CH 40V 100A |
6.246 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 10V | 3.3mOhm @ 45A, 10V | 4V @ 250µA | 102nC @ 10V | ±20V | 5850pF @ 25V | - | 1.8W (Ta), 147W (Tc) | 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Renesas Electronics America |
MOSFET N-CH 30V 20A 8-SOP |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 3.8mOhm @ 10A, 10V | - | 25nC @ 4.5V | ±20V | 3850pF @ 10V | - | 2.5W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 30V 12A 8-SOP |
4.950 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 11.1mOhm @ 6A, 10V | - | 6nC @ 4.5V | ±20V | 860pF @ 10V | - | 1.8W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Renesas Electronics America |
MOSFET N-CH 500V 2.4A TO92 |
2.790 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Ta) | 10V | 5Ohm @ 1.2A, 10V | - | 6.7nC @ 10V | ±30V | 165pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Surface Mount | MP-3A | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Renesas Electronics America |
MOSFET N-CH 600V 2A TO251 |
2.574 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2A (Ta) | 10V | 6.8Ohm @ 1A, 10V | - | 6.2nC @ 10V | ±30V | 165pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Short Leads, IPak, TO-251AA |