Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 905/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO252 |
7.866 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | - | 12nC @ 10V | ±20V | 557pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 30V POWERDI3333-8 |
7.110 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 20V | 11mOhm @ 12A, 20V | 3V @ 250µA | 58nC @ 10V | ±25V | 2987pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 8.6A POWERDI |
6.372 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 8.6A (Ta) | 4.5V, 10V | 17mOhm @ 10A, 10V | 2.1V @ 250µA | 47nC @ 10V | ±20V | 2230pF @ 15V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 30V 2.8A SOT-23 |
7.416 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.8A (Ta) | 2.5V, 4.5V | 120mOhm @ 2.8A, 4.5V | 1.4V @ 250µA | 6.7nC @ 10V | ±12V | 285pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 30V 1.5A SOT23-6 |
8.514 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 230mOhm @ 800mA, 4.5V | 1V @ 250µA | 10.2nC @ 10V | ±20V | 330pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Diodes Incorporated |
MOSFET P-CH 30V 9.3A 8SO |
8.604 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 9.3A (Ta) | 4.5V, 10V | 12mOhm @ 12A, 10V | 2.6V @ 250µA | 77.1nC @ 10V | ±20V | 4600pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 7.2A 8SO |
2.268 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 7.2A (Ta) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 43.9nC @ 15V | ±20V | 2265pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 6.4A 8SOP |
4.896 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 6.4A (Ta) | 4.5V, 10V | 25mOhm @ 7.1A, 10V | 2.5V @ 250µA | 31.6nC @ 10V | ±20V | 1678pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Microsemi |
MOSFET N-CH 900V 59A SP1 |
5.706 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | ±20V | 13600pF @ 100V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 900V 59A SP1 |
6.156 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 59A (Tc) | 10V | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | ±20V | 13600pF @ 100V | Super Junction | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
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Microsemi |
MOSFET N-CH 1000V 14A D3PAK |
8.064 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 980mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3965pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 16A D3PAK |
3.418 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 430mOhm @ 7A, 10V | 5V @ 500µA | 72nC @ 10V | ±30V | 2882pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 800V 18A D3PAK |
5.328 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 18A (Tc) | 10V | 580mOhm @ 9A, 10V | 5V @ 1mA | 122nC @ 10V | ±30V | 3757pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 19A D3PAK |
2.376 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 370mOhm @ 9A, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 3550pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 20A D3PAK |
6.084 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 500µA | 75nC @ 10V | ±30V | 2950pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 23A D3PAK |
4.374 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 290mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | ±30V | 4415pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 500V 24A D3PAK |
5.436 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 240mOhm @ 11A, 10V | 5V @ 1mA | 90nC @ 10V | ±30V | 3630pF @ 25V | - | 335W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 30A D3PAK |
6.480 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 220mOhm @ 14A, 10V | 5V @ 1mA | 140nC @ 10V | ±30V | 5575pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 900V 33A SOT227 |
6.552 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 33A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 900V 33A SOT227 |
8.154 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 33A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 3mA | 270nC @ 10V | ±20V | 6800pF @ 100V | Super Junction | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
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Microsemi |
MOSFET N-CH 800V 12A D3PAK |
6.156 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2471pF @ 25V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 1000V 17A D3PAK |
6.930 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 17A (Tc) | 10V | 780mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4845pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 1000V 9A D3PAK |
4.374 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 9A (Tc) | 10V | 1.6Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | ±30V | 2606pF @ 25V | - | 337W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 30A D3PAK |
8.982 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88nC @ 10V | ±20V | 2267pF @ 25V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.05A USM |
5.292 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | - | - | 10V | 5.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV |
2.376 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 2.7A TSM |
6.192 |
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U-MOSII | P-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4V, 10V | 85mOhm @ 1.35A, 10V | - | - | ±20V | 413pF @ 15V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | TSM | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USV |
5.814 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | - | - | ±10V | 9.3pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | USV | 5-TSSOP, SC-70-5, SOT-353 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A SSM |
2.502 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | - | 10V | 8.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.1A CST3 |
5.130 |
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π-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 8Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 11pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |