Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 904/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Renesas Electronics America |
MOSFET P-CH 30V 16A 8SOP |
2.340 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 5mOhm @ 16A, 10V | - | 195nC @ 10V | ±20V | 6250pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 14A 8SOP |
4.662 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 7mOhm @ 14A, 10V | - | 80nC @ 10V | ±20V | 3400pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 10A 8SOP |
5.832 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 15mOhm @ 10A, 10V | - | 37nC @ 10V | ±20V | 1450pF @ 10V | - | 1.1W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-PowerSOIC (0.173", 4.40mm Width) |
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Renesas Electronics America |
MOSFET P-CH 30V 30A 8HVSON |
3.744 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | - | 100nC @ 10V | ±20V | 3740pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET P-CH 30V 27A 8HVSON |
7.506 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 6.2mOhm @ 27A, 10V | - | 80nC @ 10V | ±20V | 3130pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerVDFN |
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Renesas Electronics America |
MOSFET N-CH 30V 26A 8HVSON |
6.606 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 26A (Tc) | 4.5V, 10V | 3.8mOhm @ 26A, 10V | - | 51nC @ 10V | ±20V | 2490pF @ 10V | - | 1.5W (Ta) | 150°C (TJ) | Surface Mount | 8-HWSON (3.3x3.3) | 8-PowerWDFN |
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Diodes Incorporated |
MOSFET N-CH 650V 4A ITO-220AB |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 250µA | 13.5nC @ 10V | ±30V | 900pF @ 25V | - | 8.35W (Ta) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 100V 3.1A SOT-23 |
7.794 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 4.5V, 10V | 126mOhm @ 2A, 10V | 3V @ 250µA | 10.4nC @ 10V | ±20V | 196pF @ 50V | - | 1.25W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 25A PPAK CHIPFET |
5.094 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 25A (Tc) | 1.8V, 4.5V | 9.8mOhm @ 10A, 4.5V | 1V @ 250µA | 120nC @ 8V | ±8V | 4300pF @ 10V | - | 3.1W (Ta), 31W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® ChipFet Single | PowerPAK® ChipFET™ Single |
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Vishay Siliconix |
MOSFET P-CH 20V 28A SC-70-6L |
7.344 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 28A (Tc) | 1.8V, 4.5V | 16.5mOhm @ 5A, 4.5V | 1V @ 250µA | 69nC @ 8V | ±8V | 2410pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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EPC |
GANFET TRANS 150V 12A BUMPED DIE |
8.388 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 150V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5nC @ 5V | +6V, -5V | 540pF @ 100V | - | - | -40°C ~ 125°C (TJ) | Surface Mount | Die | Die |
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Infineon Technologies |
MOSFET N-CH 40V 240A |
3.490 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | ±20V | 10250pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 123A D2PAK |
3.762 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 123A (Tc) | 10V | 3.3mOhm @ 70A, 10V | 3.9V @ 100µA | 93nC @ 10V | ±20V | 3183pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
5.418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A D2PAK-7 |
4.500 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315nC @ 10V | ±20V | 10250pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
7.182 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
8.604 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 4.25mOhm @ 60A, 10V | 3.9V @ 50µA | 63nC @ 10V | ±20V | 2200pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
3.042 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3.1mOhm @ 76A, 10V | 3.9V @ 100µA | 99nC @ 10V | ±20V | 3171pF @ 25V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 100A DPAK |
5.040 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 1.98mOhm @ 90A, 10V | 3.9V @ 100µA | 155nC @ 10V | ±20V | 5171pF @ 25V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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NXP |
MOSFET N-CH 20V 700MA SC-75 |
8.784 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 700mA (Ta) | 1.8V, 4.5V | 380mOhm @ 500mA, 4.5V | 950mV @ 250µA | 0.68nC @ 4.5V | ±8V | 83pF @ 10V | - | 250mW (Ta), 770mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75 | SC-75, SOT-416 |
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Infineon Technologies |
MOSFET N-CH 25V 49A 8PQFN |
7.236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 49A (Ta) | 4.5V, 10V | 0.95mOhm @ 50A, 10V | 2.1V @ 150µA | 94nC @ 10V | ±20V | 6100pF @ 13V | - | 3.5W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 25V 45A 8PQFN |
8.280 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 45A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 74nC @ 10V | ±20V | 4812pF @ 13V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 40A 8PQFN |
6.948 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 55nC @ 10V | ±20V | 3520pF @ 13V | - | 3.6W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 41A 8PQFN |
7.380 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 41A (Ta) | 4.5V, 10V | 1.35mOhm @ 50A, 10V | 2.1V @ 100µA | 54nC @ 10V | ±20V | 3420pF @ 13V | - | 3.6W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 22A PQFN |
8.586 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 22A (Ta) | 4.5V, 10V | 4.6mOhm @ 30A | 2.1V @ 25µA | 17nC @ 10V | ±20V | 1011pF @ 13V | - | 3.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N CH 25V 28A PQFN |
6.174 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | ±20V | 2000pF @ 13V | - | 2.7W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 25V 20A PQFN |
5.580 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 30A, 10V | 2.1V @ 25µA | 17nC @ 10V | ±20V | 1011pF @ 13V | - | 2.8W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | - | 8-TQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 500V 3.1A PG-TO-252 |
7.128 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 3.1A (Tc) | 13V | 1.4Ohm @ 900mA, 13V | 3.5V @ 70µA | 1nC @ 10V | ±20V | 178pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO220 |
4.086 |
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CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | ±20V | 557pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251 |
3.096 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |