Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 88/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
20.892 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 320mA (Tj) | 5V, 10V | 3.5Ohm @ 750mA, 10V | 2.4V @ 1mA | - | ±20V | 150pF @ 25V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
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Infineon Technologies |
MOSFET N-CH 55V 17A I-PAK |
15.246 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 75mOhm @ 10A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 40V 23A DIRECTFET |
36.150 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63nC @ 4.5V | ±20V | 5950pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB |
49.482 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 62A (Tc) | 4.5V, 10V | 8.7mOhm @ 31A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1077pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 50V 14A I-PAK |
40.170 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | 5V | 100mOhm @ 14A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 670pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 11A TO252 |
364.740 |
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aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 399mOhm @ 3.8A, 10V | 4.1V @ 250µA | 11nC @ 10V | ±30V | 545pF @ 100V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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EPC |
GAN TRANS 100V 2.7A BUMPED DIE |
1.642 |
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eGaN® | N-Channel | GaNFET (Gallium Nitride) | 100V | 2.7A (Ta) | 5V | 160mOhm @ 500mA, 5V | 2.5V @ 250µA | 0.48nC @ 5V | +6V, -4V | 55pF @ 50V | - | - | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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ON Semiconductor |
MOSFET N CH 150V 5.4A POWER 33 |
23.280 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 5.4A (Ta), 16A (Tc) | 6V, 10V | 34mOhm @ 5.4A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 1330pF @ 75V | - | 2.3W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power33 | 8-PowerWDFN |
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ON Semiconductor |
MOSFET N-CH 20V 15A 8SOIC |
46.728 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 7.5mOhm @ 15A, 4.5V | 1.5V @ 250µA | 66nC @ 5V | ±8V | 4700pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Texas Instruments |
MOSFET N-CH 25V 5X6 100A 8SON |
39.816 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 33A (Ta), 100A (Tc) | 3V, 8V | 2mOhm @ 30A, 8V | 1.4V @ 250µA | 25nC @ 4.5V | +10V, -8V | 4000pF @ 12.5V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON-CLIP (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 10A TO-220AB |
36.234 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10A (Tc) | 4V, 10V | 180mOhm @ 6A, 10V | 2V @ 250µA | 20nC @ 5V | ±16V | 440pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 50V 14A TO-252AA |
18.360 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 14A (Tc) | 5V | 100mOhm @ 14A, 5V | 2V @ 250µA | 40nC @ 10V | ±10V | 670pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 18.5A DFN5X6 |
47.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 18.5A (Ta), 85A (Tc) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2.5V @ 250µA | 72nC @ 10V | ±20V | 6370pF @ 30V | - | 2.3W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N-CH 60V 75A D2PAK |
19.872 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | ±20V | 2810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 78A TO220 |
20.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 78A (Tc) | 4.5V, 10V | 3.5mOhm @ 40A, 10V | 2.35V @ 100µA | 54nC @ 4.5V | ±20V | 5110pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
17.856 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 2.9mOhm @ 100A, 10V | 4V @ 118µA | 165nC @ 10V | ±20V | 13000pF @ 30V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N CH 600V 10.2A DPAK |
26.772 |
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SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 600V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | 1770pF @ 25V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 200V 11.5A D2PAK |
25.302 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 11.5A (Tc) | 10V | 470mOhm @ 5.75A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1200pF @ 25V | - | 3.13W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 50A TO-252 |
45.240 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 10V | 7mOhm @ 50A, 10V | 2V @ 250µA | 126nC @ 10V | ±20V | 6880pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-5 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
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Vishay Siliconix |
MOSFET N-CH 20V 60A PPAK SO-8 |
59.646 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 2.5V, 10V | 1.6mOhm @ 20A, 10V | 1.5V @ 250µA | 97nC @ 4.5V | ±12V | 8130pF @ 10V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Infineon Technologies |
MOSFET P-CH 55V 19A TO-220AB |
112.536 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 620pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 9.2A TO-220AB |
22.344 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 9.2A (Tc) | 10V | 270mOhm @ 5.5A, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 5.6A TO-220AB |
26.952 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP |
14.112 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 10V | 270mOhm @ 780mA, 10V | 4V @ 250µA | 16nC @ 10V | ±20V | 360pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
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Nexperia |
MOSFET N-CH 55V 75A D2PAK |
28.986 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 7.5mOhm @ 25A, 10V | 2V @ 1mA | 92nC @ 5V | ±15V | 6021pF @ 25V | - | 253W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 18A I-PAK |
55.926 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 60V 11A I-PAK |
36.756 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 107mOhm @ 8A, 5V | 3V @ 250µA | 11.3nC @ 10V | ±16V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 24A TO-220AB |
32.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Tc) | 4.5V, 10V | 40mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO-220AB |
15.960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Texas Instruments |
MOSFET N-CH 100V 50A 8VSON |
36.498 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Ta) | 6V, 10V | 14.5mOhm @ 10A, 10V | 3.6V @ 250µA | 21nC @ 10V | ±20V | 1680pF @ 50V | - | 2.8W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSON (3.3x3.3) | 8-PowerVDFN |