Transistor - FET, MOSFET - Singolo
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 791/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Diodes Incorporated |
MOSFET P-CH 200V SOT23F-3 |
7.254 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 137mA (Ta) | 10V | 28Ohm @ 150mA, 10V | 3.5V @ 250µA | - | ±20V | 100pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 24A POWER56 |
6.174 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 42A (Tc) | 4.5V, 10V | 2.6mOhm @ 24A, 10V | 3V @ 250µA | 63nC @ 10V | ±20V | 3940pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 20A D-PAK |
7.758 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 20A (Ta), 40A (Tc) | 4.5V, 10V | 5.7mOhm @ 20A, 10V | 3V @ 250µA | 41nC @ 10V | ±20V | 2315pF @ 13V | - | 3.7W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 25V 16.5A D-PAK |
5.922 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 25V | 16.5A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.5A, 10V | 3V @ 250µA | 29nC @ 10V | ±20V | 1590pF @ 13V | - | 3.7W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
2.070 |
|
DTMOSII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17nC @ 10V | ±30V | 950pF @ 10V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 5A VS-6 |
8.604 |
|
U-MOSIII-H | P-Channel | MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | ±20V | 490pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 79A TO-262 |
8.676 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 79A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 75A TO-262 |
6.138 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | ±20V | 4340pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 75A TO-262 |
5.238 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 75A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | ±20V | 6320pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 97A D2PAK |
8.136 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4820pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 200V 62A TO-262 |
4.014 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 62A (Tc) | 10V | 26mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 4600pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 88A TO-262 |
4.500 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 56A I-PAK |
5.796 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 56A (Tc) | 10V | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69nC @ 10V | ±20V | 2290pF @ 50V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
5.292 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75nC @ 10V | ±20V | 2190pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 75V 42A I-PAK |
3.544 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51nC @ 10V | ±20V | 1440pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V 43A I-PAK |
6.282 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30nC @ 10V | ±20V | 1150pF @ 50V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V 42A I-PAK |
2.700 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 65A I-PAK |
4.248 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Tc) | 4.5V, 10V | 8.4mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | ±20V | 1030pF @ 15V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
|
|
|
ON Semiconductor |
MOSFET N-CH 30V 9A POWER33 |
4.482 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 15A (Tc) | 4.5V, 10V | 19mOhm @ 9A, 10V | 2.5V @ 250µA | 14nC @ 10V | ±20V | 685pF @ 15V | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
|
|
|
Panasonic Electronic Components |
MOSFET N-CH 50V .1A S-MINI-3P |
3.420 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-F2 | SC-85 |
|
|
|
Panasonic Electronic Components |
MOSFET N-CH 50V .1A SS-MINI-3P |
8.424 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 125mW (Ta) | 125°C (TJ) | Surface Mount | SMini3-F2 | SC-89, SOT-490 |
|
|
|
Panasonic Electronic Components |
MOSFET N-CH 50V .1A SSS-MINI-3P |
8.424 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 12pF @ 3V | - | 100mW (Ta) | 125°C (TJ) | Surface Mount | SSSMini3-F2 | SOT-723 |
|
|
|
Panasonic Electronic Components |
MOSFET N-CH 50V 100MA SMINI-3 |
5.634 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 5V | 50Ohm @ 20mA, 5V | 3.5V @ 100µA | - | 8V | 15pF @ 5V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-F2 | SC-85 |
|
|
|
Microsemi |
MOSFET N-CH 600V 52A SOT-227 |
2.214 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 52A (Tc) | 10V | 45mOhm @ 22.5A, 10V | 3.9V @ 3mA | 150nC @ 10V | ±20V | 7200pF @ 25V | - | 290W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 600V 95A SP1 |
8.010 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | 3.9V @ 5mA | 300nC @ 10V | ±20V | 14400pF @ 25V | - | 462W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 600V 72A SP1 |
6.984 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | ±20V | 14000pF @ 25V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 600V 72A SP1 |
3.924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 35mOhm @ 72A, 10V | 3.9V @ 5.4mA | 518nC @ 10V | ±20V | 14000pF @ 25V | - | 416W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 800V 28A SP1 |
2.916 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | ±30V | 4507pF @ 25V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 800V 28A SP1 |
4.356 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 28A (Tc) | 10V | 150mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | ±30V | 4507pF @ 25V | - | 277W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 40A SP1 |
3.672 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 40A (Tc) | 10V | 216mOhm @ 33A, 10V | 5V @ 2.5mA | 570nC @ 10V | ±30V | 14800pF @ 25V | - | 657W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | SP1 |