Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 693/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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ON Semiconductor |
MOSFET P-CH 20V 4.1A SC75-6 |
8.928 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Ta) | 1.8V, 4.5V | 60mOhm @ 4.1A, 4.5V | 1.5V @ 250µA | 10nC @ 4.5V | ±8V | 780pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC75-6 FLMP | SC75-6 FLMP |
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ON Semiconductor |
MOSFET N-CH 20V 11.2A SSOT-8 |
4.158 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 11.2A (Ta) | 2.5V, 4.5V | 9mOhm @ 11.2A, 4.5V | 1.5V @ 250µA | 48nC @ 4.5V | ±8V | 3829pF @ 10V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-8 | 8-LSOP (0.130", 3.30mm Width) |
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ON Semiconductor |
MOSFET N-CH 20V 14.7A I-PAK |
4.950 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 14.7A (Ta), 50A (Tc) | 2.5V, 10V | 9mOhm @ 16.2A, 10V | 1.5V @ 250µA | 23nC @ 4.5V | ±12V | 1882pF @ 10V | - | 3.8W (Ta), 44W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 20V 3A SSOT-6 |
4.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 70mOhm @ 3A, 4.5V | 1.5V @ 250µA | 4.9nC @ 4.5V | ±12V | 355pF @ 10V | Schottky Diode (Isolated) | - | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 60V 32A TO-220 |
4.086 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 32A (Tc) | 6V, 10V | 27mOhm @ 16A, 10V | 4V @ 250µA | 33nC @ 10V | ±20V | 1120pF @ 25V | - | 58W (Tc) | -65°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 13.2A 8SOIC |
5.400 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 13.2A (Ta) | 10V | 7.5mOhm @ 13.2A, 10V | 5V @ 250µA | 67nC @ 10V | ±20V | 2819pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 15A I-PAK |
7.812 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 15A, 10V | 3V @ 250µA | 31.5nC @ 10V | ±20V | 1440pF @ 15V | - | 3.8W (Ta), 52W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET P-CH 30V 11A 8SOIC |
4.950 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 13mOhm @ 11A, 10V | 3V @ 250µA | 34nC @ 5V | ±25V | 2330pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 16A 8SOIC |
6.300 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 6mOhm @ 16A, 10V | 3V @ 1mA | 78nC @ 10V | ±20V | 3290pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 35A I-PAK |
2.772 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 35A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118nC @ 10V | ±20V | 5160pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 35A I-PAK |
6.624 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60nC @ 10V | ±20V | 2525pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 160A I-PAK |
2.736 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118nC @ 10V | ±20V | 5160pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 35A D-PAK |
5.886 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 35A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 60nC @ 10V | ±20V | 2525pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 150V 4.7A D-PAK |
3.816 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 4.7A (Ta) | 6V, 10V | 80mOhm @ 4.7A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 1907pF @ 75V | - | 3.2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 80V 7.7A D-PAK |
8.856 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 7.7A (Ta) | 6V, 10V | 29mOhm @ 7.7A, 10V | 4V @ 250µA | 49nC @ 10V | ±20V | 1760pF @ 40V | - | 3.8W (Ta), 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 65A D-PAK |
8.298 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 65A (Ta) | 4.5V, 10V | 8mOhm @ 14A, 10V | 2V @ 250µA | 46nC @ 4.5V | ±12V | 5070pF @ 15V | - | 3.2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 90A DPAK |
4.698 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Ta) | 4.5V, 10V | 5.7mOhm @ 16A, 10V | 3V @ 1mA | 64nC @ 10V | ±20V | 2500pF @ 15V | - | 70W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 88A D-PAK |
4.572 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 88A (Ta) | 4.5V, 10V | 5.1mOhm @ 18.5A, 10V | 3V @ 1mA | 81nC @ 10V | ±20V | 3290pF @ 15V | - | 69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 23A 8SOIC |
3.582 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta) | 4.5V, 10V | 5.5mOhm @ 23A, 10V | 3V @ 250µA | 69nC @ 5V | ±16V | 4973pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 21A 8SOIC |
6.930 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 4mOhm @ 21A, 10V | 3V @ 1mA | 80nC @ 10V | ±20V | 3230pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET P-CH 30V 16A 8SOIC |
5.562 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 7.2mOhm @ 16A, 10V | 3V @ 250µA | 98nC @ 10V | ±25V | 3800pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 10.8A 8SOIC |
2.988 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 10.8A (Ta) | 10V | 10.5mOhm @ 10.8A, 10V | 5V @ 250µA | 40nC @ 10V | ±20V | 1686pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 7A TO-220F |
7.110 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 920pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 6A VS-8 |
2.772 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 12V | 6A (Ta) | 1.8V, 4.5V | 28mOhm @ 3A, 4.5V | 1.2V @ 200µA | 18nC @ 5V | ±8V | 1600pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3A VS-8 |
5.976 |
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U-MOSIII | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2V, 4.5V | 49mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | 7.5nC @ 5V | ±12V | 590pF @ 10V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2.7A VS-8 |
3.598 |
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U-MOSIII | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 1.8V, 4.5V | 110mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | ±8V | 470pF @ 10V | Schottky Diode (Isolated) | 330mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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Diodes Incorporated |
MOSFET N-CH 60V 0.115A SOT23-3 |
6.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 200V 0.12A TO92-3 |
4.824 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 2.6V, 5V | 30Ohm @ 100mA, 5V | - | - | ±20V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 200V 0.12A TO92-3 |
4.842 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 120mA (Ta) | 2.6V, 5V | 30Ohm @ 100mA, 5V | - | - | ±20V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 0.15A SOT23-3 |
5.940 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 150µA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 60pF @ 10V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |