Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 68/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Vishay Siliconix |
MOSFET N-CH 30V 12A 1212-8 PPAK |
362.622 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Tc) | 4.5V, 10V | 24mOhm @ 7.8A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 435pF @ 15V | - | 3.2W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET P-CH 40V 7.2A 8SOIC |
125.634 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 7.2A (Tc) | 4.5V, 10V | 45mOhm @ 5A, 10V | 2.5V @ 250µA | 38nC @ 10V | ±20V | 970pF @ 20V | - | 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET P-CH 30V 8.7A PWRDI3333-8 |
113.454 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta) | 5V, 10V | 20mOhm @ 8A, 10V | 2.5V @ 250µA | 16.5nC @ 10V | ±25V | 1931pF @ 15V | - | 950mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 100V 12A TO252 |
68.496 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 4.5V, 10V | 140mOhm @ 5A, 10V | 3V @ 250µA | 9.7nC @ 10V | ±20V | 1167pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 8V 6A SOT-23 |
50.736 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 6A (Tc) | 1.2V, 4.5V | 30mOhm @ 5.3A, 4.5V | 800mV @ 250µA | 29nC @ 4.5V | ±5V | 1485pF @ 4V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 55V 11A DPAK |
50.484 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 150mOhm @ 5A, 10V | 4V @ 1mA | 5.5nC @ 10V | ±20V | 322pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V POWERDI3333-8 |
31.002 |
|
Automotive, AEC-Q101 | P-Channel | MOSFET (Metal Oxide) | 40V | 7.2A (Ta) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 33.7nC @ 10V | ±20V | 1643pF @ 20V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 6.6A 6UDFN |
26.862 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 6.6A (Ta) | 1.8V, 4.5V | 24mOhm @ 8A, 4.5V | 1V @ 250µA | 44nC @ 8V | ±8V | 2200pF @ 10V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN1616-6 | 6-UFDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 27A TO252 |
23.160 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 27A (Tc) | 4.5V, 10V | 25mOhm @ 7A, 10V | 2.4V @ 250µA | 22nC @ 10V | ±20V | 1241pF @ 15V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 20A TO252 |
21.648 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 20A (Tc) | 4.5V, 10V | 45mOhm @ 4.4A, 10V | 3V @ 250µA | 23.2nC @ 10V | ±20V | 1328pF @ 20V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 55V 26A LFPAK |
95.676 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 5V | 36mOhm @ 15A, 10V | 2V @ 1mA | 11nC @ 5V | ±15V | 1020pF @ 25V | - | 59W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET P-CH 250V 260MA 4SOT223 |
29.574 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 260mA (Ta) | 2.8V, 10V | 12Ohm @ 260mA, 10V | 2V @ 130µA | 5.4nC @ 10V | ±20V | 104pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 100V 1A SOT-223 |
234.192 |
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QFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 1A (Tc) | 10V | 1.05Ohm @ 500mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±30V | 250pF @ 25V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET P-CH 30V 3.4A SOT-223 |
75.462 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.4A (Ta) | 4.5V, 10V | 130mOhm @ 3.4A, 10V | 3V @ 250µA | 3.5nC @ 10V | ±20V | 205pF @ 15V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8 |
38.316 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 250µA | 23nC @ 10V | ±20V | 1700pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 20V 6.5A 6-TSOP |
237.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22nC @ 5V | ±12V | 1310pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(SOT23-6) | SOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 30V 6.5A 8SOIC |
52.308 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 4.5V, 10V | 38mOhm @ 6.5A, 10V | 3V @ 250µA | 7nC @ 5V | ±20V | 460pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V POWER56 |
28.116 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 13.2A (Ta), 20A (Tc) | 4.5V, 10V | 9.5mOhm @ 13.2A, 10V | 3V @ 250µA | 22nC @ 10V | ±20V | 1410pF @ 15V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET P-CH 30V 5.3A 8-SOIC |
43.986 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 50mOhm @ 5.3A, 10V | 3V @ 250µA | 14nC @ 10V | ±25V | 528pF @ 15V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 100V 1A SOT-89 |
151.710 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1A (Ta) | 6V, 10V | 700mOhm @ 1.5A, 10V | 4V @ 250µA | 2.9nC @ 10V | ±20V | 138pF @ 50V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-89-3 | TO-243AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 60V 12A TO-252 |
537.816 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta), 12A (Tc) | 4.5V, 10V | 60mOhm @ 12A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 540pF @ 30V | - | 2.1W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 40V 34A LFPAK |
75.360 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 34A (Tc) | 5V, 10V | 24mOhm @ 15A, 10V | 2.3V @ 1mA | 11nC @ 5V | ±15V | 959pF @ 25V | - | 59.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Central Semiconductor Corp |
MOSFET N-CH 60V 0.28A SOT-23 |
56.796 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1A (Ta) | 5V, 10V | 220mOhm @ 500mA, 10V | 2.3V @ 250µA | 2.3nC @ 4.5V | 20V | 240pF @ 25V | - | 350mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 55V 11A DPAK |
155.952 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 4.5V, 10V | 125mOhm @ 5A, 10V | 2V @ 1mA | 6nC @ 5V | ±15V | 338pF @ 25V | - | 36W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 20A TO252 |
22.362 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | 2.2V @ 250µA | 22.4nC @ 10V | ±20V | 1250pF @ 30V | - | 66W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 250V 0.6A SOT89 |
50.472 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 600mA (Ta) | 2.5V, 4.5V | 6.5Ohm @ 300mA, 4.5V | 1.3V @ 1mA | 2.1nC @ 4.5V | ±10V | 140pF @ 20V | - | 3.5W (Tc) | 150°C (TJ) | Surface Mount | SOT-89/PCP-1 | TO-243AA |
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Nexperia |
MOSFET N-CH 80V 25A LFPAK |
83.238 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Tc) | 5V, 10V | 41mOhm @ 5A, 10V | 2.1V @ 1mA | 21.9nC @ 10V | ±20V | 1108pF @ 25V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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Infineon Technologies |
MOSFET N-CH 60V 4.5A 6TSOP |
22.530 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 4.5A (Ta) | 4.5V, 10V | 60mOhm @ 4.5A, 10V | 2.3V @ 15µA | 5.6nC @ 5V | ±20V | 657pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 40V 4.6A SOT23-3 |
1.024.218 |
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Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 4.6A (Tc) | 4.5V, 10V | 75mOhm @ 3A, 10V | 2.5V @ 250µA | 16nC @ 10V | ±20V | 620pF @ 20V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 150V 840MA TO236 |
25.308 |
|
Automotive, AEC-Q101, TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 840mA (Tc) | 10V | 1.77Ohm @ 500mA, 10V | 3.5V @ 250µA | 10nC @ 10V | ±20V | 250pF @ 50V | - | 3W (Tc) | -55°C ~ 175°C (TA) | Surface Mount | TO-236 (SOT-23) | TO-236-3, SC-59, SOT-23-3 |