Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 65/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N CH 60V 6A DFN 2x2B |
162.732 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 44mOhm @ 6A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 426pF @ 30V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET P-CH 20V 4A SSOT-6 |
99.024 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 65mOhm @ 4A, 4.5V | 1.5V @ 250µA | 16nC @ 4.5V | ±8V | 925pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 20V 0.915A SC89-3 |
24.288 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 915mA (Ta) | 1.5V, 4.5V | 230mOhm @ 600mA, 4.5V | 1.1V @ 250µA | 1.82nC @ 4.5V | ±6V | 110pF @ 16V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89 | SC-89, SOT-490 |
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Texas Instruments |
MOSFET N-CH 30V 2.3A PICOSTAR |
112.944 |
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FemtoFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 8V | 64mOhm @ 500mA, 8V | 1.2V @ 250µA | 2.7nC @ 4.5V | 10V | 347pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Rohm Semiconductor |
MOSFET N-CH 45V 2.5A TSMT3 |
29.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 2.5A (Ta) | 2.5V, 4.5V | 130mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 3.2nC @ 4.5V | ±12V | 250pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Alpha & Omega Semiconductor |
MOSFET N CH 100V 4.5A DFN 2X2B |
242.934 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 4.5A (Ta) | 4.5V, 10V | 72mOhm @ 4.5A, 10V | 2.8V @ 250µA | 12nC @ 10V | ±20V | 415pF @ 50V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
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ON Semiconductor |
MOSFET N-CH 30V 44A U8FL |
89.748 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.2A (Ta), 44A (Tc) | 4.5V, 10V | 7.4mOhm @ 30A, 10V | 2.2V @ 250µA | 18.6nC @ 10V | ±20V | 993pF @ 15V | - | 790mW (Ta), 23.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Infineon Technologies |
MOSFET N-CH 150V 0.9A 6-TSOP |
47.622 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 900mA (Ta) | 10V | 1.2Ohm @ 540mA, 10V | 5.5V @ 250µA | 6.8nC @ 10V | ±30V | 88pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 35A POWERPAK1212 |
44.490 |
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TrenchFET® Gen III | P-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 1.8V, 4.5V | 9mOhm @ 12A, 4.5V | 1V @ 250µA | 63nC @ 4.5V | ±8V | 3860pF @ 10V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Diodes Incorporated |
MOSFET N-CH 300V .25A SOT-23 |
23.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | 250mA (Ta) | 2.7V, 10V | 4Ohm @ 300mA, 10V | 3V @ 250µA | 7.6nC @ 10V | ±20V | 187.3pF @ 25V | - | 310mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 55V 7A SOT223 |
1.060.482 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 7A (Tc) | 4.5V, 10V | 73mOhm @ 8A, 10V | 2V @ 1mA | 11nC @ 5V | ±15V | 584pF @ 25V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Panasonic Electronic Components |
MOSFET P-CH 20V 3A |
579.054 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 55mOhm @ 1A, 4V | 1.3V @ 1mA | - | ±10V | 1000pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1-B | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 30V 8.7A PQFN |
79.692 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.7A (Ta), 19A (Tc) | 2.5V, 4.5V | 15.5mOhm @ 8.5A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1019pF @ 25V | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PQFN (2x2) | 6-PowerVDFN |
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Diodes Incorporated |
MOSFETP-CHAN 30V POWERDI3333-8 |
22.518 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 35A (Tc) | 4.5V, 10V | 12mOhm @ 11.5A, 10V | 3V @ 250µA | 51nC @ 10V | ±25V | 2147pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 (Type UX) | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 240V 0.48A SOT23 |
375.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 240V | 480mA (Ta) | 3.3V, 10V | 3.5Ohm @ 300mA, 10V | 2.5V @ 250µA | 6.6nC @ 10V | ±20V | 188pF @ 25V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 6A DPAK |
295.188 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4.5V, 10V | 68mOhm @ 12A, 10V | 3V @ 250µA | 10.3nC @ 10V | ±20V | 502pF @ 30V | - | 2.12W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 40V 7.2A DPAK |
248.640 |
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- | P-Channel | MOSFET (Metal Oxide) | 40V | 7.2A (Ta) | 4.5V, 10V | 51mOhm @ 12A, 10V | 3V @ 250µA | 14nC @ 10V | ±20V | 674pF @ 20V | - | 2.14W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Micro Commercial Co |
P-CHANNEL MOSFETSOT-223 |
226.998 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 6A | 4.5V, 10V | 205mOhm @ 6A, 10V | 2.8V @ 250µA | 25nC @ 10V | ±20V | 760pF @ 25V | - | 1.25W | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 4.4A TO236 |
276.804 |
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Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 4.3A (Tc) | 10V | 95mOhm @ 4.5A, 10V | 2.5V @ 250µA | 12nC @ 10V | ±20V | 550pF @ 30V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 60V 9.2A 8-SOIC |
223.302 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 9.2A (Ta) | 4.5V, 10V | 18mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 864pF @ 30V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET P-CH 60V 1.6A SOT23-3 |
173.076 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Tc) | 4.5V, 10V | 345mOhm @ 1.25A, 10V | 3V @ 250µA | 4.1nC @ 4.5V | ±20V | 210pF @ 30V | - | 1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 8A SOT-23 |
137.406 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Tc) | 4.5V, 10V | 24mOhm @ 12A, 10V | 2.5V @ 250µA | 14.5nC @ 10V | ±20V | 540pF @ 15V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-236 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 8V 12A 6SC-70 |
89.292 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 12A (Tc) | 1.2V, 4.5V | 16mOhm @ 8.2A, 4.5V | 800mV @ 250µA | 50nC @ 5V | ±5V | 2300pF @ 4V | - | 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Vishay Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6L |
114.786 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Tc) | 4.5V | 35mOhm @ 4.8A, 4.5V | 1V @ 250µA | 44nC @ 8V | ±8V | - | - | 2.4W (Ta), 13W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-75-6L Single | PowerPAK® SC-75-6L |
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Diodes Incorporated |
MOSFET N-CH 130V 1A SOT23 |
57.204 |
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- | N-Channel | MOSFET (Metal Oxide) | 130V | 1A (Ta) | 6V, 10V | 750mOhm @ 2A, 10V | 4V @ 250µA | 5.6nC @ 10V | ±20V | 231pF @ 25V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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IXYS Integrated Circuits Division |
MOSFET N-CH 800V SOT-23 |
24.672 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | - | 0V | 380Ohm @ 20mA, 0V | - | - | ±15V | 20pF @ 25V | Depletion Mode | 400mW (Ta) | -55°C ~ 110°C (TA) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 9.78A DPAK |
20.904 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 9.78A (Ta) | 4.5V, 10V | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9nC @ 10V | ±20V | 608pF @ 15V | - | 2.17W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 58A DPAK |
22.620 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 58A (Tc) | 4.5V, 10V | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16nC @ 4.5V | ±20V | 1350pF @ 15V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 30V 57A LFPAK |
27.606 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 57A (Tc) | 4.5V, 10V | 9.1mOhm @ 15A, 10V | 2.15V @ 1mA | 16.7nC @ 10V | ±20V | 894pF @ 15V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
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ON Semiconductor |
MOSFET N-CH 30V 8.5A 8-SOIC |
44.388 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 23mOhm @ 8.5A, 10V | 2.5V @ 250µA | 13nC @ 10V | ±20V | 635pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |