Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 58/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 6.7A SOT23 |
113.106 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.7A (Tc) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 4nC @ 4.5V | ±10V | 600pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 30V 5.5A SOT23 |
43.026 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Tc) | 2.5V, 4.5V | 32mOhm @ 4A, 4.5V | 900mV @ 250µA | 8.9nC @ 4.5V | ±12V | 792pF @ 15V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 3.9A SOT23 |
189.330 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Tc) | 2.5V, 4.5V | 65mOhm @ 3.2A, 4.5V | 1.2V @ 250µA | 7.8nC @ 4.5V | ±8V | 587pF @ 10V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET P-CH 20V 2.5A 3-PICOSTAR |
361.212 |
|
FemtoFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.5A (Ta) | 1.8V, 8V | 94mOhm @ 500mA, 8V | 1.2V @ 250µA | 1.42nC @ 4.5V | -12V | 230pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 4A SOT23-3 |
99.468 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 10V | 45mOhm @ 4A, 10V | 1.4V @ 250µA | 17.2nC @ 10V | ±12V | 676pF @ 15V | - | 760mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 2.8A SOT-23 |
28.908 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 2.5V, 4.5V | 85mOhm @ 3.6A, 4.5V | 1V @ 250µA | 3.5nC @ 4V | ±8V | 150pF @ 5V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 80V 1.1A 3DFN |
155.172 |
|
- | N-Channel | MOSFET (Metal Oxide) | 80V | 1.1A (Ta) | 4.5V, 10V | 450mOhm @ 1.1A, 10V | 2.7V @ 250µA | 4.5nC @ 10V | ±20V | 130pF @ 40V | - | 400mW (Ta), 6.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Nexperia |
MOSFET P-CH 30V 2.4A 3DFN |
44.676 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.4A (Ta) | 4.5V, 10V | 120mOhm @ 2.4A, 10V | 2.5V @ 250µA | 11nC @ 10V | ±20V | 309pF @ 15V | - | 400mW (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 20V 2.6A SOT23 |
544.686 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 2.6A, 4.5V | 1.1V @ 10µA | 2.9nC @ 4.5V | ±12V | 220pF @ 16V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 60V 3.1A SOT23 |
227.940 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 3.1A (Tc) | 4.5V, 10V | 190mOhm @ 3A, 10V | 2.5V @ 250µA | 8.2nC @ 10V | ±20V | 425pF @ 30V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.7A SOT23 |
22.980 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Tc) | 1.8V, 4.5V | 50mOhm @ 3A, 4.5V | 800mV @ 250µA | 9.6nC @ 4.5V | ±10V | 850pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 8V 1.4A SOT-323 |
2.010.822 |
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- | P-Channel | MOSFET (Metal Oxide) | 8V | 1.4A (Ta) | 1.8V, 4.5V | 100mOhm @ 1A, 4.5V | 700mV @ 250µA | 6.4nC @ 5V | ±8V | 640pF @ 8V | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N-CH 12V 9.3A SC59 |
238.176 |
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- | N-Channel | MOSFET (Metal Oxide) | 12V | 9.3A (Ta) | 1.2V, 2.5V | 10mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.6nC @ 8V | ±8V | 2426pF @ 10V | - | 680mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Rohm Semiconductor |
MOSFET N-CH 30V 8A HSMT8 |
23.670 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 15.2mOhm @ 8A, 10V | 2.5V @ 1mA | 14.5nC @ 10V | ±20V | 660pF @ 15V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
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Nexperia |
MOSFET P-CH 20V 1A SOT323 |
1.069.356 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V | 200mOhm @ 1A, 4.5V | 1.15V @ 250µA | 3.9nC @ 4.5V | ±12V | 280pF @ 10V | - | 290mW (Ta), 1.67W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 1.5A 3-DFN |
319.638 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | - | ±12V | 320pF @ 16V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1411 (1.4x1.1) | 3-XDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 0.25A SOT-323 |
83.940 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 250mA (Ta) | 4V, 10V | 1.4Ohm @ 250mA, 10V | 2.5V @ 1mA | - | ±20V | 30pF @ 10V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | UMT3 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET N CH 30V 7.3A 8-SO |
47.328 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Ta) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | ±25V | 697pF @ 15V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE MOSF |
27.024 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 650mA (Ta) | 3V, 5V | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | ±12V | 60pF @ 12V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Panasonic Electronic Components |
MOSFET N CH 20V 2A SMINI3-G1-B |
392.226 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 2.5V, 4V | 110mOhm @ 1A, 4V | 1.3V @ 1mA | - | ±10V | 290pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | SMini3-G1-B | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 30V SOT23 |
98.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.7A (Ta) | 1.8V, 4.5V | 23mOhm @ 5.7A, 4.5V | 900mV @ 250µA | 18.6nC @ 4.5V | ±12V | 1150pF @ 15V | - | 510mW (Ta), 6.94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 1.2A SOT23-3 |
197.118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.2A (Ta) | 4.5V, 10V | 480mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | ±16V | 64pF @ 25V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 1.2A SC70-3 |
1.306.500 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.2A (Ta) | 2.5V, 10V | 150mOhm @ 1.2A, 10V | 1.5V @ 250µA | 10.1nC @ 10V | ±12V | 430pF @ 15V | - | 290mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET P-CH 20V 0.86A SOT-563 |
377.766 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 860mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 5.6nC @ 4.5V | ±8V | 458pF @ 16V | - | 170mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-563 | SOT-563, SOT-666 |
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ON Semiconductor |
MOSFET N-CH 20V 6.2A 6-SSOT |
27.306 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 6.2A (Ta) | 2.5V, 4.5V | 24mOhm @ 6.2A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | ±12V | 895pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA TO-236 |
666.246 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | ±20V | 23pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET P-CH 20V SOT23 |
111.090 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.6A (Ta) | 1.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | 900mV @ 250µA | 12nC @ 4.5V | ±12V | 744pF @ 20V | - | 490mW (Ta), 4.63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 30V 2A MCPH3 |
50.610 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 1.8V, 4.5V | 165mOhm @ 1A, 4.5V | - | 1.7nC @ 4.5V | ±12V | 130pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | 3-MCPH | 3-SMD, Flat Leads |
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Infineon Technologies |
MOSFET P-CH 30V 3.6A SOT-23-3 |
245.898 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 64mOhm @ 3.6A, 10V | 2.4V @ 10µA | 4.8nC @ 4.5V | ±20V | 388pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V SOT23 |
264.048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.8A (Ta) | 1.8V, 4.5V | 20mOhm @ 6.8A, 4.5V | 900mV @ 250µA | 20.2nC @ 4.5V | ±12V | 1240pF @ 10V | - | 510mW (Ta), 6.94W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |