Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 56/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET P-CH 12V 1.3A TUMT3 |
21.840 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 1.3A (Ta) | 1.5V, 4.5V | 260mOhm @ 1.3A, 4.5V | 1V @ 1mA | 2.4nC @ 4.5V | ±10V | 290pF @ 6V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Nexperia |
MOSFET N-CHANNEL 20V 2.2A SC70 |
25.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 1.8V, 4.5V | 65mOhm @ 2A, 4.5V | 1V @ 250µA | 5.85nC @ 4.5V | ±8V | 289pF @ 10V | - | 395mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70 | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 25V 0.7A SC70 |
27.822 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 700mA (Ta) | 2.7V, 4.5V | 350mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.5nC @ 4.5V | ±8V | 60pF @ 10V | - | 280mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-3 (SOT323) | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92 |
59.592 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40pF @ 10V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 400MA TO-92 |
20.652 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 400mA (Ta) | 4.5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | - | ±20V | 50pF @ 25V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 60V 500MA TO-92 |
42.024 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 500mA (Ta) | 10V | 5Ohm @ 200mA, 10V | 3V @ 1mA | - | ±20V | 40pF @ 10V | - | 830mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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ON Semiconductor |
MOSFET N-CH 30V 1.5A SOT-23 |
87.846 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4.5V, 10V | 110mOhm @ 2.5A, 10V | 3V @ 250µA | 7nC @ 10V | ±20V | 250pF @ 24V | - | 420mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 400MA SOT-23 |
617.772 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 400mA (Ta) | 4.5V, 10V | 800mOhm @ 200mA, 10V | 2.3V @ 250µA | 2.18nC @ 10V | ±20V | 70pF @ 5V | - | 225mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 1.13A SOT-23 |
274.320 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 1.13A (Ta) | 4.5V, 10V | 200mOhm @ 1.95A, 10V | 3V @ 250µA | 10nC @ 10V | ±20V | 200pF @ 15V | - | 400mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 1A SOT-23 |
566.106 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 4.5V, 10V | 180mOhm @ 1.5A, 10V | 2.3V @ 250µA | 2.5nC @ 5V | ±20V | 165pF @ 5V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Texas Instruments |
MOSFET N-CH 30V 3.1A 0402 |
246.372 |
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NexFET™ | N-Channel | MOSFET (Metal Oxide) | 30V | 3.1A (Ta) | 1.8V, 4.5V | 109mOhm @ 500mA, 8A | 1.1V @ 250µA | 1.35nC @ 4.5V | 12V | 195pF @ 15V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 3-PICOSTAR | 3-XFDFN |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
23.400 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 71mOhm @ 3A, 4.5V | 1V @ 1mA | 2nC @ 4V | ±8V | 153pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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ON Semiconductor |
MOSFET P-CH 20V 0.76A SC-89 |
91.020 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 760mA (Tj) | 1.8V, 4.5V | 360mOhm @ 350mA, 4.5V | 1.2V @ 250µA | 2.1nC @ 4.5V | ±6V | 156pF @ 5V | - | 313mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Diodes Incorporated |
MOSFET N-CH 30V 4A SOT-323 |
1.550.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 2.5V, 10V | 52mOhm @ 4A, 10V | 1.5V @ 250µA | 11.7nC @ 10V | ±12V | 465pF @ 15V | - | 770mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 60V 0.33A SOT23 |
1.465.632 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Ta) | 4.5V, 10V | 2Ohm @ 330mA, 10V | 2V @ 80µA | 3.57nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V 0.021A SOT-23 |
264.072 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 21mA (Ta) | 4.5V, 10V | 500Ohm @ 16mA, 10V | 2.6V @ 8µA | 1nC @ 10V | ±20V | 28pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23 |
235.680 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 2.3V @ 13µA | 0.6nC @ 10V | ±20V | 20.9pF @ 25V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Nexperia |
MOSFET N-CH 20V 1.05A SOT23 |
160.830 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.05A (Ta) | 1.8V, 4.5V | 200mOhm @ 600mA, 4.5V | 570mV @ 1mA | 3.9nC @ 4.5V | ±8V | 152pF @ 16V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 2.3A SOT-23-3 |
87.858 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 4.5V, 10V | 165mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | ±20V | 160pF @ 25V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 20V 0.76A SC75 |
29.586 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 760mA (Tj) | 1.8V, 4.5V | 360mOhm @ 350mA, 4.5V | 1.2V @ 250µA | 2.1nC @ 4.5V | ±6V | 156pF @ 5V | - | 301mW (Tj) | - | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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Vishay Siliconix |
MOSFET N-CH 12V 4A SOT-363 |
42.636 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 12V | 4A (Ta) | 1.8V, 4.5V | 20mOhm @ 6A, 4.5V | 1V @ 250µA | 33nC @ 8V | ±8V | 1010pF @ 6V | - | 1.56W (Ta), 2.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70-6 (SOT-363) | 6-TSSOP, SC-88, SOT-363 |
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Rohm Semiconductor |
MOSFET N-CH 20V 300MA VMT3 |
303.792 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 300mA (Ta) | 1.8V, 4V | 1Ohm @ 300mA, 4V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A 2-3Z1A |
48.078 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | ±20V | 436pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 20V 5.8A SOT23 |
99.576 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 5.8A (Tc) | 1.8V, 4.5V | 25mOhm @ 4A, 4.5V | 800mV @ 250µA | 7.7nC @ 4.5V | ±10V | 535pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 20V 4.1A SOT23 |
115.176 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.1A (Tc) | 1.8V, 4.5V | 65mOhm @ 3A, 4.5V | 800mV @ 250µA | 5.1nC @ 4.5V | ±10V | 515pF @ 10V | - | 1.56W (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 2.7A SOT-23-3 |
83.352 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 2.7A (Ta) | 4.5V, 10V | 100mOhm @ 2.7A, 10V | 2.3V @ 25µA | 1nC @ 4.5V | ±20V | 110pF @ 15V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 200MA SC-89 |
250.254 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 5Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1nC @ 4.5V | ±12V | 60pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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ON Semiconductor |
MOSFET N-CH 20V 0.361A SOT883 |
92.964 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 361mA (Ta) | 1.5V, 4.5V | 700mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.8nC @ 4.5V | ±8V | 24pF @ 10V | - | 155mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-883 (XDFN3) (1x0.6) | SC-101, SOT-883 |
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ON Semiconductor |
MOSFET P-CH 20V 0.83A SC89-3 |
347.850 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 830mA (Ta) | 1.5V, 4.5V | 500mOhm @ 830mA, 4.5V | 1V @ 250µA | 3.1nC @ 4.5V | ±8V | 135pF @ 10V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89-3 | SC-89, SOT-490 |
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Nexperia |
MOSFET N-CH 30V 3.7A SOT23 |
1.782.378 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.7A (Ta) | 1.8V, 4.5V | 44mOhm @ 3.7A, 4.5V | 900mV @ 250µA | 12nC @ 4.5V | ±12V | 635pF @ 15V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236AB | TO-236-3, SC-59, SOT-23-3 |