Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 559/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 800V 15A TO-268 |
7.344 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 600mOhm @ 7.5A, 10V | 4.5V @ 4mA | 90nC @ 10V | ±20V | 4300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 800V 25A ISOPLUS247 |
8.460 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 25A (Tc) | 10V | 150mOhm @ 18A, 10V | 4V @ 2mA | 355nC @ 10V | ±20V | - | Super Junction | - | -40°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 1000V 12A TO-247AD |
3.942 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | ±20V | 2900pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 12A TO-247 |
8.370 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 12A TO-247 |
5.742 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 4.5V @ 250µA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 200V 80A TO-268 |
3.078 |
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Linear™ | N-Channel | MOSFET (Metal Oxide) | 200V | 80A (Tc) | 10V | 32mOhm @ 40A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6160pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 650V 54A ISOPLUS247 |
3.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 54A (Tc) | 10V | 33mOhm @ 51A, 10V | 5V @ 250µA | 152nC @ 10V | ±30V | 10900pF @ 25V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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Cree/Wolfspeed |
1200V, 75 MOHM, G3 SIC MOSFET ON |
7.812 |
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C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51nC @ 15V | +15V, -4V | 1350pF @ 1000V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
MOSFET N-CH 1KV 3.5A ISOPLUS247 |
6.894 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 3.5A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39nC @ 10V | ±20V | 1050pF @ 25V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 250V 62A TO-264 |
2.358 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 62A (Tc) | 10V | 35mOhm @ 31A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 5400pF @ 25V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 (IXTK) | TO-264-3, TO-264AA |
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Infineon Technologies |
MOSFET N-CH 650V 60A TO-247 |
3.454 |
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Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | 431W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 900V 16A TO-264AA |
6.462 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 16A (Tc) | 10V | 650mOhm @ 8A, 10V | 5V @ 4mA | 170nC @ 10V | ±20V | 4000pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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Microsemi |
MOSFET N-CH 600V 77A D3PAK |
4.788 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260nC @ 10V | ±20V | 13600pF @ 25V | Super Junction | 481W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D3Pak | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 200V 60A TO-247 |
8.172 |
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Linear L2™ | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 45mOhm @ 30A, 10V | 4.5V @ 250µA | 255nC @ 10V | ±20V | 10500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 900V 12A TO-268 |
2.610 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 5.5V @ 4mA | 90nC @ 10V | ±20V | 2900pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 90A ISOPLUS247 |
8.442 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET P-CH 100V 170A PLUS247 |
6.084 |
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PolarP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240nC @ 10V | ±20V | 12600pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 21A I4-PAC-5 |
3.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 220mOhm @ 15A, 10V | 4.5V @ 250µA | 95nC @ 10V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 |
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IXYS |
MOSFET N-CH 200V 88A PLUS247 |
5.292 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 88A (Tc) | 10V | 30mOhm @ 44A, 10V | 4V @ 4mA | 146nC @ 10V | ±30V | 4150pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 13A ISOPLUS247 |
2.988 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 600mOhm @ 7.5A, 10V | 4.5V @ 4mA | 90nC @ 10V | ±20V | 4300pF @ 25V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS |
MOSFET N-CH 500V 44A TO-268 |
4.014 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 6.5V @ 4mA | 93nC @ 10V | ±30V | 4800pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 1000V 18A TO-268 |
3.490 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 660mOhm @ 9A, 10V | 6.5V @ 4mA | 90nC @ 10V | ±30V | 4890pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET P-CH 100V 90A ISOPLUS247 |
4.626 |
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TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 13mOhm @ 70A, 10V | 4V @ 250µA | 400nC @ 10V | ±15V | 31400pF @ 25V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS247™ | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 25A ISOPLUS220 |
8.118 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 25A (Tc) | 10V | 150mOhm @ 18A, 10V | 4V @ 2mA | 180nC @ 10V | ±20V | 4600pF @ 25V | Super Junction | - | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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Microsemi |
MOSFET N-CH 500V 35A TO-247 |
6.372 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72nC @ 10V | ±30V | 3261pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V 16A TO268 |
4.500 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 16A (Tc) | 10V | 950mOhm @ 500mA, 10V | 6.5V @ 1mA | 120nC @ 10V | ±30V | 6900pF @ 25V | - | 660W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Microsemi |
MOSFET N-CH 600V 45A TO-264 |
5.112 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 600V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215nC @ 10V | ±30V | 8590pF @ 25V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 1000V 12.5A TO-247 |
2.304 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 12.5A (Tc) | 10V | 900mOhm @ 500mA, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 100V 420A TO-264 |
5.094 |
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GigaMOS™ HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 420A (Tc) | 10V | 2.6mOhm @ 60A, 10V | 5V @ 8mA | 670nC @ 10V | ±20V | 47000pF @ 25V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 200V 90A PLUS247 |
2.700 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 90A (Tc) | 10V | 22mOhm @ 45A, 10V | 4V @ 4mA | 190nC @ 10V | ±20V | 6800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |