Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 558/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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IXYS |
MOSFET N-CH 600V 90A PLUS247 |
7.092 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 90A (Tc) | 10V | 38mOhm @ 45A, 10V | 4.5V @ 8mA | 210nC @ 10V | ±30V | 8500pF @ 25V | - | 1100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 10A TO-247AD |
3.654 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 10A (Tc) | 10V | 1.2Ohm @ 5A, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4000pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH |
7.002 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 80A (Tc) | 10V | 38mOhm @ 500mA, 10V | 5V @ 4mA | 140nC @ 10V | ±30V | 8300pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4L | TO-247-4 |
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Vishay Siliconix |
MOSFET N-CH 600V 16A TO-247AC |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 400mOhm @ 9.6A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 3900pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 64A PLUS247 |
2.664 |
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HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 500V | 64A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150nC @ 10V | ±30V | 8700pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PLUS247™-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 1200V ISOPLUS247 |
5.958 |
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- | N-Channel | MOSFET (Metal Oxide) | 1200V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ |
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IXYS-RF |
MOSFET N-CH 500V 21A TO247 |
7.758 |
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HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 250mOhm @ 10.5A, 10V | 5.5V @ 4mA | 77nC @ 10V | ±20V | 2600pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 200V 67A TO-247 |
6.156 |
|
POWER MOS V® | N-Channel | MOSFET (Metal Oxide) | 200V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225nC @ 10V | ±30V | 6120pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 90A TO-264 |
7.488 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 90A (Tc) | 10V | 38mOhm @ 45A, 10V | 4.5V @ 8mA | 210nC @ 10V | ±30V | 8500pF @ 25V | - | 1100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 500V 40A TO-3P |
6.516 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 160mOhm @ 500mA, 10V | 4.5V @ 4mA | 130nC @ 10V | ±30V | 4500pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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IXYS |
MOSFET N-CH 500V 40A TO-247AD |
6.390 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 140mOhm @ 500mA, 10V | 4.5V @ 4mA | 130nC @ 10V | ±30V | 3800pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 300V 70A TO-247 |
3.672 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 70A (Tc) | 10V | 54mOhm @ 35A, 10V | 6.5V @ 4mA | 98nC @ 10V | ±20V | 4735pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 44A TO-247 |
4.716 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 6.5V @ 4mA | 93nC @ 10V | ±30V | 4800pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 1000V 18A TO-247 |
5.832 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 660mOhm @ 9A, 10V | 6.5V @ 4mA | 90nC @ 10V | ±30V | 4890pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 75V 170A PLUS220 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 175A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | PLUS220 | TO-220-3, Short Tab |
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IXYS |
MOSFET N-CH 75V 170A PLUS220-S |
6.912 |
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- | N-Channel | MOSFET (Metal Oxide) | 75V | 175A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | PLUS-220SMD | PLUS-220SMD |
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IXYS |
MOSFET N-CH 500V 94A TO264 |
6.480 |
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HiPerFET™, PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220nC @ 10V | ±30V | 13700pF @ 25V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 80V 80A TO-268 |
2.880 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 9mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4800pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 200V 150A TO-268 |
4.086 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 200V | 150A (Tc) | 10V | 15mOhm @ 75A, 10V | 5V @ 4mA | 177nC @ 10V | ±20V | 11700pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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IXYS |
MOSFET N-CH 300V 94A TO-268 |
8.460 |
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HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 300V | 94A (Tc) | 10V | 36mOhm @ 47A, 10V | 5V @ 4mA | 190nC @ 10V | ±20V | 11400pF @ 25V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Cree/Wolfspeed |
1000V, 65 MOHM, G3 SIC MOSFET |
6.372 |
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C3M™ | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1000V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35nC @ 15V | +15V, -4V | 660pF @ 600V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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IXYS |
MOSFET N-CH 150V 180A TO-264 |
5.832 |
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HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 180A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240nC @ 10V | ±20V | 7000pF @ 25V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
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IXYS |
MOSFET N-CH 900V 12A TO-247 |
3.780 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 4.5V @ 250µA | 170nC @ 10V | ±20V | 4500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 15A TO-247AD |
5.130 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 15A (Tc) | 10V | 600mOhm @ 7.5A, 10V | 4.5V @ 4mA | 200nC @ 10V | ±20V | 4870pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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IXYS |
MOSFET N-CH 800V 17A TO-247 |
8.622 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 600mOhm @ 500mA, 10V | 4.5V @ 4mA | 95nC @ 10V | ±20V | 3600pF @ 25V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |
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Microsemi |
MOSFET N-CH 650V 47A TO-247 |
2.826 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 260nC @ 10V | ±20V | 7015pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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IXYS |
MOSFET N-CH 600V 30A TO-268(D3) |
6.570 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 230mOhm @ 500mA, 10V | 4.5V @ 4mA | 125nC @ 10V | ±20V | 4700pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
8.730 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270nC @ 10V | ±20V | 6800nF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 650V 76A TO247 |
6.372 |
|
Automotive, AEC-Q101, SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 76A (Tc) | 10V | 41mOhm @ 38A, 10V | 5V @ 250µA | 304nC @ 10V | ±20V | 13566pF @ 25V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 900V 12A TO-247AD |
6.084 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 12A (Tc) | 10V | 900mOhm @ 6A, 10V | 4.5V @ 4mA | 155nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-247-3 |