Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 366/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CH 500V 20A TO-220 |
4.536 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 53nC @ 10V | ±30V | 1380pF @ 25V | - | 192W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO-247 |
5.778 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 37nC @ 10V | ±30V | 1300pF @ 25V | - | 214W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 500V 20A TO-247 |
6.372 |
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FDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 250mOhm @ 10A, 10V | 5V @ 250µA | 53nC @ 10V | ±30V | 1380pF @ 25V | - | 214W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 36A TO-3P |
4.392 |
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PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 170mOhm @ 500mA, 10V | 5V @ 250µA | 85nC @ 10V | ±30V | 5500pF @ 25V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 8A TO-247 |
8.928 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 6A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 5V @ 100µA | 13.7nC @ 10V | - | 505pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 17A TO-220FP |
3.960 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±30V | 2070pF @ 50V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
TO 247 |
5.688 |
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MDmesh™ DK5 | N-Channel | MOSFET (Metal Oxide) | 950V | 18A (Tc) | 10V | 330mOhm @ 9A, 10V | 5V @ 100µA | 50.7nC @ 10V | ±30V | 1600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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IXYS |
40V/440A TRENCHT4 PWR MOSFET TO- |
5.004 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 440A (Tc) | 10V | 1.25mOhm @ 100A, 10V | 4V @ 250µA | 480nC @ 10V | ±15V | 26000pF @ 25V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
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Vishay Siliconix |
MOSFET N-CH 600V 22A TO-247AC |
5.328 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 280mOhm @ 13A, 10V | 5V @ 250µA | 150nC @ 10V | ±30V | 3570pF @ 25V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 37A TO-247 |
5.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145nC @ 10V | ±30V | 5710pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 30A TO-220 |
5.076 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N) |
8.298 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Microsemi |
MOSFET N-CH 800V 19A TO-247 |
7.236 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19A (Tc) | 10V | 530mOhm @ 9A, 10V | 5V @ 1mA | 120nC @ 10V | ±30V | 3760pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 1700 V, 2.3 OHM TYP., |
2.754 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1700V | 5A (Tc) | 10V | 2.9Ohm @ 2.5A, 10V | 5V @ 100µA | 37nC @ 10V | ±30V | 1380pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220 |
8.478 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 19.5A (Tc) | 10V | 260mOhm @ 19.5A, 10V | 5V @ 100µA | 40nC @ 10V | ±30V | 1600pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 650V 30A TO-247 |
3.456 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71nC @ 10V | ±25V | 3000pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 600 V 35 MOHM TYP. 63 |
7.380 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 63A (Tc) | 10V | 41mOhm @ 31.5A, 10V | 4.75V @ 250µA | 106nC @ 10V | ±25V | 4360pF @ 100V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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Microsemi |
MOSFET N-CH 1000V 18A TO-247 |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 18A (Tc) | 10V | 700mOhm @ 9A, 10V | 5V @ 1mA | 150nC @ 10V | ±30V | 4845pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 12A TO-3PF |
3.726 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOWATT-218FX | ISOWATT218FX |
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STMicroelectronics |
MOSFET N-CH 500V 45A TO-247 |
8.964 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 45A (Tc) | 10V | 100mOhm @ 22.5A, 10V | 5V @ 250µA | 117nC @ 10V | ±30V | 3700pF @ 25V | - | 417W (Tc) | -65°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 33A TO-220 |
4.788 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±25V | 4650pF @ 100V | - | 190W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 12A TO-247-3 |
6.732 |
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MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 42A TO-220FP |
4.518 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98nC @ 10V | ±25V | 4200pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
N-CHANNEL 600 V, 0.032 OHM TYP., |
7.146 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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Microsemi |
MOSFET N-CH 600V 77A TO-247 |
5.796 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 77A (Tc) | 10V | 41mOhm @ 44.4A, 10V | 3.6V @ 2.96mA | 260nC @ 10V | ±20V | 13600pF @ 25V | Super Junction | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 1200V 20A HIP247 |
1.633 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 20A (Tc) | 20V | 290mOhm @ 10A, 20V | 3.5V @ 1mA | 45nC @ 20V | +25V, -10V | 650pF @ 400V | - | 175W (Tc) | -55°C ~ 200°C (TJ) | Through Hole | HiP247™ | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 75A TO-264 |
8.370 |
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POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 500V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290nC @ 10V | ±30V | 11600pF @ 25V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
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ON Semiconductor |
MOSFET N-CH 600V 76A TO-247 |
5.652 |
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SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285nC @ 10V | ±30V | 12385pF @ 100V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Microsemi |
MOSFET N-CH 500V 46A T-MAX |
4.392 |
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POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 500V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95nC @ 10V | ±30V | 4360pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
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STMicroelectronics |
MOSFET N-CH 650V 84A TO-247 |
3.436 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 84A (Tc) | 10V | 29mOhm @ 42A, 10V | 5V @ 250µA | 204nC @ 10V | ±25V | 8825pF @ 100V | - | 450W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |