Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 265/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 40V 120A PG-HSOG-8 |
3.960 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 7V, 10V | 0.9mOhm @ 60A, 10V | 3.4V @ 90µA | 115nC @ 10V | ±20V | 7360pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
3.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 3450pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
2.682 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.6mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | ±20V | 10820pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 73A D2PAK |
17.808 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140nC @ 10V | ±20V | 3550pF @ 50V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 10A 4VSON |
7.092 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 10A (Tc) | 10V | 230mOhm @ 2.4A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 67W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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Infineon Technologies |
MOSFET N-CH 800V 17A TO252 |
6.408 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | Super Junction | 101W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH TO263-3 |
14.460 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 250V 24A 8TDSON |
8.352 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 24A (Tc) | 10V | 67mOhm @ 24A, 10V | 4V @ 90µA | 30nC @ 10V | ±20V | 2410pF @ 125V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 300V 16A 8TDSON |
3.042 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 300V | 16A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 90µA | 30nC @ 10V | ±20V | 2450pF @ 150V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 200V 43A D2PAK |
5.724 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | ±20V | 2900pF @ 25V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 17A 5X6 PQFN |
2.484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 17A (Ta), 100A (Tc) | 10V | 5.9mOhm @ 50A, 10V | 4V @ 150µA | 98nC @ 10V | ±20V | 4290pF @ 25V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
5.274 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Ta), 100A (Tc) | 6V, 10V | 4.6mOhm @ 50A, 10V | 3.5V @ 120µA | 63nC @ 10V | ±20V | 4500pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 130A |
4.050 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 130A (Tc) | 6V, 10V | 2.9mOhm @ 80A, 10V | 3.7V @ 150µA | 200nC @ 10V | ±20V | 6530pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3-2 |
2.862 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | ±20V | 14000pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 250V 25A TDSON-8 |
2.754 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
3.978 |
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CoolMOS™ CFD7 | N-Channel | MOSFET (Metal Oxide) | 650V | 14A (Tc) | 10V | 170mOhm @ 6A, 10V | 4.5V @ 300µA | 28nC @ 10V | ±20V | 1199pF @ 400V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 200V 34A |
5.562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 409A D2PAK |
3.060 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 180A TO263-7 |
2.412 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.1mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | ±20V | 20000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK |
5.688 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 50A TO263-3 |
12.876 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 1820pF @ 75V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 260A D2PAK |
3.672 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5890pF @ 15V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 50A TDSON-8 |
6.840 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 50A (Tc) | 8V, 10V | 19mOhm @ 50A, 10V | 4V @ 90µA | 31nC @ 10V | ±20V | 2420pF @ 75V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 13A TO-252 |
3.580 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 137A AUTO |
8.046 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 27A (Ta), 137A (Tc) | 10V | 1.9mOhm @ 85A, 10V | 3.9V @ 150µA | 204nC @ 10V | ±20V | 6867pF @ 25V | - | 2.5W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET™ M4 | DirectFET™ Isometric M4 |
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Infineon Technologies |
MOSFET N-CH 75V 183A D2PAK |
21.096 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270nC @ 10V | ±20V | 10130pF @ 25V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 80V TO263-3 |
2.646 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 3.1mOhm @ 100A, 10V | 3.8V @ 108µA | 87nC @ 10V | ±20V | 6240pF @ 40V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 192A D2PAK |
2.988 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 192A (Tc) | 10V | 4.2mOhm @ 115A, 10V | 4V @ 250µA | 255nC @ 10V | ±20V | 9500pF @ 50V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
TRENCH <= 40V |
5.022 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A | 4.5V, 10V | 0.7mOhm @ 50A, 10V | 2.3V @ 250µA | 94nC @ 4.5V | ±20V | 8400pF @ 20V | - | 188W | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 650V 11.1A 4VSON |
3.870 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.1A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 22nC @ 10V | ±20V | 1100pF @ 100V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |