Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 264/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
2.214 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.35V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 60V 100A 8TDSON |
4.878 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2.3V @ 49µA | 30nC @ 4.5V | ±20V | 4400pF @ 30V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
2.214 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.8mOhm @ 50A, 10V | 3.3V @ 50µA | 49nC @ 10V | ±20V | 3375pF @ 30V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 100A 8TDSON |
3.726 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 95µA | 76nC @ 10V | ±20V | 5600pF @ 40V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-7 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 90A TDSON-8 |
6.534 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 11.4A (Ta), 90A (Tc) | 10V | 10mOhm @ 25A, 10V | 4V @ 110µA | 44nC @ 10V | ±20V | 2900pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 31A MX |
2.844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 53nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 40V 100A TDSON-8 |
7.290 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 31A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 50A, 10V | 2V @ 85µA | 150nC @ 10V | ±20V | 12000pF @ 20V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET |
6.354 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.3mOhm @ 33A, 10V | 2.1V @ 100µA | 39nC @ 4.5V | ±16V | 4160pF @ 13V | Schottky Diode (Body) | 2.1W (Ta), 54W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
6.012 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 30A, 10V | 2V @ 250µA | 48nC @ 4.5V | ±20V | 6300pF @ 15V | - | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 600V 9A TO-252 |
6.588 |
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CoolMOS™ CP | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22nC @ 10V | ±20V | 790pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
N-CHANNEL_30/40V |
7.884 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2V @ 90µA | 140nC @ 10V | ±16V | 8250pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 100A 8TDSON |
8.172 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 7V, 10V | 1.2mOhm @ 50A, 10V | 3.4V @ 90µA | 131nC @ 10V | ±20V | 7650pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-34 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET |
3.798 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2060pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO252-3 |
8.154 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 225mOhm @ 4.8A, 10V | 4V @ 240µA | 20nC @ 10V | ±20V | 996pF @ 400V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 32A DIRECTFET-MX |
6.534 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 32A (Ta), 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | ±20V | 4420pF @ 13V | Schottky Diode (Body) | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 800V 13A TO252-3 |
5.508 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 84W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 25V 39A DIRECTFET |
8.838 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.4V @ 100µA | 59nC @ 4.5V | ±20V | 5150pF @ 13V | - | 3.6W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
2.070 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Ta) | 6V, 10V | 1.95mOhm @ 50A, 10V | 3.3V @ 74µA | 77nC @ 10V | ±20V | 5.25nF @ 30V | - | 136W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
5.868 |
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Automotive, AEC-Q101, HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO263-3 |
22.296 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 4.9mOhm @ 80A, 10V | 3.8V @ 91µA | 68nC @ 10V | ±20V | 4750pF @ 37.5V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
2.502 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 34A DIRECTFET |
2.034 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 34A (Ta), 180A (Tc) | 4.5V, 10V | 1.6mOhm @ 34A, 10V | 2.4V @ 100µA | 59nC @ 4.5V | ±20V | 5340pF @ 13V | - | 2.8W (Ta), 78W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 75V 100A TDSON-8 |
5.976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 19A (Ta), 100A (Tc) | 10V | 4.2mOhm @ 50A, 10V | 3.8V @ 91µA | 69nC @ 10V | ±20V | 4800pF @ 37.5V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 140A TO263-7 |
22.728 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 140A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 95µA | 120nC @ 10V | ±20V | 9700pF @ 20V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 100A TDSON-8 |
6.030 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13.4A (Ta), 100A (Tc) | 10V | 7.9mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | ±20V | 5900pF @ 50V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 75V 89A |
6.642 |
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StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 89A (Tc) | 6V, 10V | 5.7mOhm @ 53A, 10V | 3.7V @ 150µA | 186nC @ 10V | ±20V | 6504pF @ 25V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric ME | DirectFET™ Isometric ME |
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Infineon Technologies |
DIFFERENTIATED MOSFETS |
6.300 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 39A (Ta), 100A (Tc) | 4.5V, 10V | 1mOhm @ 50A, 10V | 2V @ 250µA | 133nC @ 10V | ±20V | 9520pF @ 20V | - | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8 FL | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 100A TDSON-8 |
7.866 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.2V @ 93µA | 175nC @ 10V | ±20V | 13000pF @ 30V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 120V 98A 8TDSON |
5.274 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 13.4A (Ta), 98A (Tc) | 10V | 7.7mOhm @ 50A, 10V | 4V @ 110µA | 88nC @ 10V | ±20V | 5700pF @ 60V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 40V 120A PG-HSOG-8 |
4.086 |
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Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 0.8mOhm @ 60A, 10V | 2V @ 90µA | 140nC @ 10V | ±16V | 7910pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TDSON-8-33 | 8-PowerTDFN |