Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 190/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
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Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23 |
828.768 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 38mOhm @ 3.6A, 4.5V | 1V @ 250µA | 7nC @ 4.5V | ±8V | 594.3pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P CH 20V 4.3A SOT23 |
2.727.174 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 1.8V, 10V | 38mOhm @ 3.5A, 10V | 1.4V @ 250µA | 9.1nC @ 4.5V | ±10V | 216pF @ 15V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 3.2A SOT-23 |
1.632.870 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.8V, 4.5V | 80mOhm @ 1.5A, 4.5V | 900mV @ 250µA | - | ±12V | 627pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 1.5A SOT-323 |
2.184.762 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.8V, 4.5V | 100mOhm @ 1.5A, 4.5V | 900mV @ 250µA | - | ±12V | 627pF @ 10V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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ON Semiconductor |
MOSFET N-CH 20V SC75 |
27.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 238mA (Tj) | 2.5V, 4.5V | 3Ohm @ 10mA, 4.5V | 1.5V @ 100µA | - | ±10V | 20pF @ 5V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SC-75, SOT-416 |
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Diodes Incorporated |
MOSFET N CH 20V 2.8A SOT323 |
361.446 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.8A (Ta) | 1.5V, 4.5V | 56mOhm @ 2A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | ±12V | 400pF @ 10V | - | 430mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Diodes Incorporated |
MOSFET P-CH 20V 4A SOT-23 |
1.606.656 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 39mOhm @ 4A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | ±8V | 294pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET N-CHAN 30V SOT23 |
713.358 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta), 5.3A (Tc) | 4.5V, 10V | 33mOhm @ 3A, 10V | 2.5V @ 250µA | 8.9nC @ 10V | ±20V | 288pF @ 15V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 20V 4.2A SOT23 |
924.168 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 2.5V, 4.5V | 90mOhm @ 3.6A, 4.5V | 1V @ 50µA | 7nC @ 4.5V | ±8V | 594.3pF @ 10V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET P-CH 20V 2.7A SOT23-3 |
668.220 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.7A (Ta) | 2.5V, 4.5V | 100mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 5.3nC @ 4.5V | ±12V | 250pF @ 10V | - | 1.08W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Micro Commercial Co |
P-CHANNEL MOSFET, SOP-8 PACKAGE |
28.314 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 6.5A (Ta) | 10V | 72mOhm @ 5A, 10V | 2.4V @ 250µA | 11nC @ 10V | ±20V | 625pF @ 15V | - | 1.4W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Diodes Incorporated |
MOSFET N-CH 60V 0.2A SOT363 |
26.892 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 5V, 10V | 3Ohm @ 50mA, 5V | 3V @ 1mA | - | ±20V | 50pF @ 25V | Schottky Diode (Isolated) | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-363 | 6-TSSOP, SC-88, SOT-363 |
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Vishay Siliconix |
MOSFET P-CH 60V 185MA SOT23-3 |
643.050 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 185mA (Ta) | 4.5V, 10V | 6Ohm @ 500mA, 10V | 3V @ 250µA | 1.7nC @ 15V | ±20V | 23pF @ 25V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH30V SC-59 |
92.652 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 12V | 12.2A (Ta) | 2.5V, 4.5V | 8mOhm @ 5A, 4.5V | 1V @ 250µA | 23.4nC @ 8V | ±8V | 995pF @ 6V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type F) | 6-UDFN Exposed Pad |
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Diodes Incorporated |
MOSFET P-CH 30V 3.5A SOT-23 |
3.475.176 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 2.5V, 10V | 77mOhm @ 4.2A, 10V | 1.3V @ 250µA | 12nC @ 10V | ±12V | 432pF @ 15V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH SOT23-3 |
25.314 |
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- | N-Channel | MOSFET (Metal Oxide) | - | - | 4.5V, 10V | - | - | - | ±20V | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 8.5A POWERDI |
27.612 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.5A (Ta) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2.1V @ 250µA | 13.2nC @ 10V | ±25V | 697pF @ 15V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 12V 9.1A 6UDFN |
3.843.066 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 9.1A (Ta) | 1.2V, 4.5V | 16mOhm @ 8.2A, 4.5V | 800mV @ 250µA | 42.6nC @ 5V | ±8V | 2953pF @ 4V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
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Infineon Technologies |
MOSFET P-CH 30V 3.8A 6-TSOP |
103.968 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 511pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V PWRDI3333-8 |
2.700 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 5.3A (Ta) | 4.5V, 10V | 18mOhm @ 10A, 10V | 2.1V @ 250µA | 17.4nC @ 10V | ±25V | 751pF @ 10V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 6.9A SOT-26 |
29.820 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6.9A (Ta) | 4.5V, 10V | 33mOhm @ 6.9A, 10V | 2.1V @ 250µA | 13nC @ 10V | ±20V | 755pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-26 | SOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4A 6-TSOP |
49.698 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 86mOhm @ 4A, 4.5V | 1.2V @ 250µA | 11.4nC @ 4.5V | ±20V | 594pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Diodes Incorporated |
MOSFET N-CH 30V 6A SC59-3 |
26.454 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 30mOhm @ 6A, 10V | 2.1V @ 250µA | 10.5nC @ 5V | ±20V | 755pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Diodes Incorporated |
MOSFET N-CH 30V 8A 8-SO |
24.960 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8A (Ta) | 4.5V, 10V | 15mOhm @ 10.7A, 10V | 2.3V @ 250µA | 18.5nC @ 10V | ±12V | 1849pF @ 15V | Schottky Diode (Body) | 1.54W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 16A POWERPAKSO-8 |
58.416 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Tc) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2.2V @ 250µA | 15nC @ 4.5V | +20V, -16V | 1385pF @ 15V | - | 34.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Nexperia |
MOSFET P-CHANNEL 20V 4A 4WLCSP |
100.746 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.8V, 4.5V | 95mOhm @ 3A, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | ±8V | 420pF @ 10V | - | 400mW (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 4-WLCSP (0.78x0.78) | 4-XFBGA, WLCSP |
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Diodes Incorporated |
MOSFET N-CH 20V 10.5A U-DFN |
6.462 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 10.5A (Ta) | 1.5V, 4.5V | 11.6mOhm @ 8.5A, 4.5V | 1.1V @ 250µA | 45.6nC @ 10V | ±12V | 1779pF @ 10V | - | 660mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-PowerUDFN |
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Nexperia |
MOSFET N-CH 40V 8A 6DFN2020MD |
22.902 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 8A (Ta) | 10V | 25mOhm @ 8A, 10V | 4V @ 250µA | 13nC @ 10V | ±20V | 460pF @ 20V | - | 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A SMD |
5.184 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Nexperia |
MOSFET N-CH 55V 7.5A SOT223 |
69.192 |
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- | N-Channel | MOSFET (Metal Oxide) | 55V | 3.5A (Ta) | 10V | 80mOhm @ 5A, 10V | 4V @ 1mA | - | ±16V | 500pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |