Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 155/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-262 |
16.464 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 51nC @ 10V | ±30V | 1426pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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STMicroelectronics |
MOSFET N-CH 950V 7.2A TO220FP |
20.784 |
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SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 950V | 7.2A (Tc) | 10V | 1.35Ohm @ 3.6A, 10V | 5V @ 100µA | 33nC @ 10V | ±30V | 1031pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CHANNEL 600V 20A TO220 |
15.732 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-247AC |
12.144 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 25A TO-247AC |
6.648 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 25A (Tc) | 10V | 170mOhm @ 13A, 10V | 5V @ 250µA | 88nC @ 10V | ±30V | 1707pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 950V 9A TO-274 |
12.120 |
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SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 950V | 9A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 5V @ 100µA | 13nC @ 10V | ±30V | 450pF @ 100V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 20A TO220AB |
15.540 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Central Semiconductor Corp |
MOSFET N-CH 800V 12A |
9.348 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 12A (Ta) | 10V | 450mOhm @ 6A, 10V | 4V @ 250µA | 52.4nC @ 10V | 30V | 1090pF @ 100V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 650V 5.1A TO220FP |
7.896 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 5.1A (Tc) | 10V | 930mOhm @ 3.1A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 1417pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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STMicroelectronics |
MOSFET N-CH 55V 80A TO220 |
21.624 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 70A TO-3P |
7.830 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 70A (Tc) | 10V | 28mOhm @ 35A, 10V | 4V @ 250µA | 175nC @ 10V | ±25V | 5400pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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STMicroelectronics |
MOSFET N-CH 650V 8.5A TO-220 |
17.352 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 430mOhm @ 4.3A, 10V | 5V @ 250µA | 22nC @ 10V | ±25V | 900pF @ 100V | - | 70W (Tc) | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3PF |
12.576 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 4V @ 1mA | 60nC @ 10V | ±20V | 1400pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 24A TO3PF |
9.636 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 24A (Tc) | 10V | 165mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 120W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 20A D2PAK |
13.464 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 240A AUTO |
15.300 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7437pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 100V 127A D2PAK |
29.076 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220AB |
17.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO-220 FP |
23.088 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84nC @ 10V | ±30V | 2030pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 20A TO247AC |
9.768 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | ±30V | 1451pF @ 100V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 12A TO-220FP |
19.320 |
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MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 33.3nC @ 10V | ±25V | 983pF @ 50V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 600V 26A TO220 |
21.264 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 26A (Tc) | 10V | 125mOhm @ 13A, 10V | 4V @ 250µA | 45.5nC @ 10V | ±25V | 1781pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO220-3 |
7.920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | ±20V | 20000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 21A D2PAK |
7.812 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86nC @ 10V | ±30V | 1920pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 5.5A TO220FP |
18.756 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 750mOhm @ 3.3A, 10V | 4V @ 250µA | 49nC @ 10V | ±30V | 1400pF @ 25V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Rohm Semiconductor |
MOSFET N-CHANNEL 600V 30A TO3PF |
14.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 800V 17A TO220 |
8.088 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32nC @ 10V | ±20V | 2050pF @ 300V | - | 180W (Tc) | 150°C | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
NCHANNEL 600 V 105 MOHM TYP. 22 |
7.650 |
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MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
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IXYS |
120V/110A TRENCHT2 POWER MOSFET |
7.524 |
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TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 120V | 110A (Tc) | 10V | 14mOhm @ 55A, 10V | 4.5V @ 250µA | 120nC @ 10V | ±20V | 6570pF @ 25V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 600 V 0.110 OHM TYP. 2 |
7.584 |
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MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 195mOhm @ 9A, 10V | 4.75V @ 250µA | 24nC @ 10V | ±25V | 940pF @ 100V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |