Transistor - FET, MOSFET - Singolo
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CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Singolo
Record 29.970
Pagina 152/999
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Tecnologia | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Tensione inverter (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Funzione FET | Dissipazione di potenza (max) | Temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / Custodia |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 800V 7A TO251-3 |
12.018 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17nC @ 10V | ±20V | 460pF @ 500V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
28.992 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 5V | 4.5mOhm @ 25A, 10V | 2.1V @ 1mA | 92.1nC @ 5V | ±10V | 15340pF @ 25V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 5.1A I-PAK |
21.582 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 700V 6A TO251 |
16.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 750mOhm @ 1.8A, 10V | 4V @ 250µA | 10.7nC @ 10V | ±30V | 555pF @ 100V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V TO-220FP |
19.872 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 950mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | ±25V | 271pF @ 100V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 40V 180A 2WDSON |
45.156 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 36A (Ta), 180A (Tc) | 10V | 1.5mOhm @ 30A, 10V | 4V @ 250µA | 142nC @ 10V | ±20V | 12000pF @ 20V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | MG-WDSON-2, CanPAK M™ | 3-WDSON |
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Vishay Siliconix |
MOSFET N-CH 400V 1.7A DPAK |
25.116 |
|
- | N-Channel | MOSFET (Metal Oxide) | 400V | 1.7A (Tc) | 10V | 3.6Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Nexperia |
MOSFET N-CH 80V TO220AB |
46.380 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 90A (Tc) | 10V | 8.7mOhm @ 10A, 10V | 4V @ 1mA | 52nC @ 10V | ±20V | 3346pF @ 40V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
23.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 1.4A (Tc) | 10V | 7Ohm @ 840mA, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 229pF @ 25V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 3.3A I-PAK |
23.220 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 3.3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17nC @ 10V | ±30V | 340pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 800V 5.5A TO251 |
26.658 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 685pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 100V POWERFLAT5X6 |
27.966 |
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DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 10V | 10.5mOhm @ 8A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 3550pF @ 50V | - | 5W (Ta), 100W (Tc) | 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 60V 100A I2PAK |
42.336 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 4.6mOhm @ 25A, 10V | 4V @ 1mA | 82nC @ 10V | ±20V | 6230pF @ 25V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 8A ITO220S |
27.276 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 250µA | 16nC @ 10V | ±30V | 528pF @ 100V | - | 41.7W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
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Nexperia |
MOSFET N-CH 100V 47A TO220AB |
20.892 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 10V | 25mOhm @ 25A, 10V | 4V @ 1mA | 61nC @ 10V | ±20V | 2600pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 80V 120A D2PAK |
23.202 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 3.8mOhm @ 25A, 10V | 4V @ 1mA | 169nC @ 10V | ±20V | 12030pF @ 25V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 620V 6A TO-252 |
28.308 |
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- | N-Channel | MOSFET (Metal Oxide) | - | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4V @ 250µA | 34nC @ 10V | ±30V | 578pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 5.5A IPAK |
25.206 |
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MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 5.5A (Tc) | 10V | 780mOhm @ 3A, 10V | 4V @ 250µA | 10nC @ 10V | ±25V | 320pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 60V 17A TO-262 |
15.570 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4V, 5V | 100mOhm @ 10A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL 800V 6A TO251 |
32.622 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6nC @ 10V | ±30V | 691pF @ 100V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 9.5A TO251 |
30.540 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 9.5A (Tc) | 10V | 380mOhm @ 2.85A, 10V | 4V @ 250µA | 19.4nC @ 10V | ±30V | 795pF @ 100V | - | 83W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251 (IPAK) | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO251-3 |
14.280 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 800V 8A TO251-3 |
15.120 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20nC @ 10V | ±20V | 570pF @ 500V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Nexperia |
MOSFET N-CH 80V 100A D2PAK |
33.006 |
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- | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Tc) | 10V | 4.5mOhm @ 25A, 10V | 4V @ 1mA | 125nC @ 10V | ±20V | 8400pF @ 40V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
22.320 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 900V 2.1A IPAK |
25.392 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 900V | 2.1A (Tc) | 10V | 6.5Ohm @ 1.05A, 10V | 4.5V @ 50µA | 27nC @ 10V | ±30V | 485pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
31.140 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A I-PAK |
25.506 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
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STMicroelectronics |
MOSFET N-CH 600V 16A MLPD8X8 4L |
23.832 |
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MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 205mOhm @ 8A, 10V | 4.75V @ 250µA | 29nC @ 10V | ±25V | 1090pF @ 100V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFlat™ (8x8) HV | 8-PowerVDFN |
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Nexperia |
MOSFET N-CH 100V TO220AB |
13.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 89A (Tc) | 10V | 9.6mOhm @ 15A, 10V | 4V @ 1mA | 82nC @ 10V | ±20V | 4454pF @ 50V | - | 211W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |