Transistor - FET, MOSFET - Array
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Mostra filtri
Ripristina filtri
Applica filtri
CategoriaSemiconduttori / Transistor / Transistor - FET, MOSFET - Array
Record 3.829
Pagina 128/128
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo FET | Funzione FET | Tensione Drain to Source (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Capacità di ingresso (Ciss) (Max) @ Vds | Potenza - Max | Temperatura di esercizio | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
4.392 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
4.248 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics America |
MOSFET N-CH DUAL LGA |
5.706 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Renesas Electronics America |
MOSFET N-CH SC-88 |
4.770 |
|
- | 2 N-Channel (Dual), Schottky | Logic Level Gate, 4.5V Drive | 60V | 100mA (Ta) | 2.7Ohm @ 100mA, 10V | 2.5V @ 250µA | 2nC @ 10V | 20pF @ 10V | 200mW (Ta) | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SC-88 |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
4.734 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
8.784 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
2.340 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
7.992 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET 2N-CH 60V SOT-363 |
3.436 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET N-CH SOT23 |
4.230 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Diodes Incorporated |
MOSFET P-CH SOT23 |
5.472 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CHANNEL |
8.226 |
|
- | 2 N-Channel (Dual) | Standard | - | 500mA (Ta) | 4.25Ohm @ 250mA, 10V | 4.9V @ 250mA | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP |
|
|
Micro Commercial Co |
MOSFET P+SKY DFN2020-6U |
5.778 |
|
- | P-Channel | Schottky Diode (Isolated) | 20V | 2A (Ta) | 110mOhm @ 2.8A, 4.5V | 1V @ 250µA | 7.2nC @ 4.5V | 480pF @ 15V | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | DFN2020-6U |
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 7A 8-SOIC |
6.318 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
Infineon Technologies |
MOSFET 2N-CH 30V 7.6A/11A 8-SOIC |
7.776 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
ON Semiconductor |
MOSFET P-CH SC88 |
8.190 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
NXP |
MOSFET 2N-CH 30V 5A SOT96-1 |
4.860 |
|
TrenchMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | 5A | 50mOhm @ 5A, 10V | 1V @ 250µA | 35nC @ 10V | - | 900mW | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
NXP |
MOSFET 2N-CH 30V 8SOIC |
6.264 |
|
TrenchMOS™ | 2 N-Channel (Dual) | Logic Level Gate | 30V | - | 100mOhm @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | 2W | -65°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
|
|
NXP |
MOSFET 2N-CH 56LFPAK |
8.676 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - |