Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 949/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Bourns |
DIODE GEN PURP 400V 3A SMC |
5.724 |
|
- | Standard | 400V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
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Bourns |
DIODE GEN PURP 50V 3A SMC |
5.166 |
|
- | Standard | 50V | 3A | 700mV @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 50V | 250pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
|
|
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Bourns |
DIODE GEN PURP 600V 3A SMC |
6.948 |
|
- | Standard | 600V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
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Bourns |
DIODE GEN PURP 800V 3A SMC |
6.246 |
|
- | Standard | 800V | 3A | 1.15V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 40pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC (DO-214AB) | -65°C ~ 175°C |
|
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Bourns |
DIODE SCHOTTKY 20V 1A DO216AA |
4.014 |
|
- | Schottky | 20V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 20V | 75pF @ 4V, 1MHz | Surface Mount | DO-216AA | DO-216AA | -55°C ~ 125°C |
|
|
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Bourns |
DIODE SCHOTTKY 40V 1A DO216AA |
4.446 |
|
- | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 60pF @ 4V, 1MHz | Surface Mount | DO-216AA | DO-216AA | -55°C ~ 125°C |
|
|
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Bourns |
DIODE SCHOTTKY 40V 100MA 0603 |
7.344 |
|
- | Schottky | 40V | 100mA | 550mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | 9pF @ 10V, 1MHz | Surface Mount | 0603 (1608 Metric) | 0603 | -40°C ~ 125°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 80V 200MA SCD80-2 |
6.102 |
|
- | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SCD80-2 |
3.312 |
|
- | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | SC-80 | SCD-80 | -55°C ~ 125°C |
|
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|
Infineon Technologies |
DIODE SCHOTTKY 600V 5.6A TO252-3 |
2.808 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 5.6A | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A GP20 |
7.794 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO204AC |
2.196 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 750ns | 10µA @ 1000V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
2.880 |
|
- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3A DO214AB |
7.416 |
|
- | Schottky | 100V | 3A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 600MA MPG06 |
6.732 |
|
- | Standard | 200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO214AC |
7.830 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A TO277A |
5.022 |
|
eSMP® | Schottky | 40V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
8.172 |
|
eSMP® | Schottky | 30V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 500MA CST2B |
2.556 |
|
- | Schottky | 30V | 500mA | 450mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 118pF @ 0V, 1MHz | Surface Mount | 2-SMD, No Lead | CST2B | 125°C (Max) |
|
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Panasonic Electronic Components |
DIODE SCHOTTKY 40V 1A MINI2 |
8.730 |
|
- | Schottky | 40V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 6.8ns | 100µA @ 40V | 21pF @ 10V, 1MHz | Surface Mount | SOD-123F | Mini2-F4-B | 150°C (Max) |
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GeneSiC Semiconductor |
SIC SCHOTTKY DIODE 650V 2A |
6.174 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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GeneSiC Semiconductor |
SIC SCHOTTKY DIODE 1200V 10A |
5.742 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
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|
ON Semiconductor |
DIODE GEN PURP 200V 1.5A DO15 |
6.156 |
|
- | Standard | 200V | 1.5A | 1.4V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 25pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 1A DO41 |
30 |
|
- | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 12pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
|
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|
ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD |
8.820 |
|
- | Schottky | 20V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 180pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 125°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 400V 25A DO4 |
7.812 |
|
- | Standard | 400V | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 800V 25A DO4 |
2.430 |
|
- | Standard | 800V | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 800V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
|
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GeneSiC Semiconductor |
DIODE GEN PURP 1.2KV 25A DO4 |
4.968 |
|
- | Standard | 1200V | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1200V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
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GeneSiC Semiconductor |
DIODE GEN PURP 1.4KV 25A DO4 |
6.516 |
|
- | Standard | 1400V | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1400V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |
|
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|
GeneSiC Semiconductor |
DIODE GEN PURP 1.6KV 25A DO4 |
5.436 |
|
- | Standard | 1600V | 25A | 1.55V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 4mA @ 1600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -40°C ~ 180°C |