Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 908/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 3A TO277A |
3.798 |
|
eSMP® | Schottky | 60V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A TO277A |
5.688 |
|
eSMP® | Schottky | 30V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 30V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A TO277A |
5.760 |
|
eSMP® | Schottky | 40V | 5A | 520mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 40V | 280pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A |
7.992 |
|
eSMP® | Schottky | 50V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 50V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A TO277A |
6.300 |
|
eSMP® | Schottky | 60V | 5A | 690mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 200pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 8A TO277A |
4.284 |
|
eSMP® | Schottky | 20V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 8A TO277A |
4.338 |
|
eSMP® | Schottky | 30V | 8A | 570mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 330pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO277A |
5.688 |
|
eSMP® | Schottky | 100V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 100V | 140pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 8A TO277A |
7.362 |
|
eSMP® | Schottky | 90V | 8A | 900mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2µA @ 90V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 2A DO214AC |
7.146 |
|
- | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 2A DO214AC |
8.388 |
|
- | Schottky | 40V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 3A DO214AC |
3.258 |
|
- | Schottky | 30V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AC |
5.508 |
|
- | Schottky | 40V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 4A DO214AA |
5.292 |
|
- | Schottky | 30V | 4A | 450mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AA |
7.344 |
|
- | Schottky | 40V | 4A | 490mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 40V | - | Surface Mount | DO-214AA, SMB | SMB (DO-214AA) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 5A DO214AB |
5.220 |
|
- | Schottky | 30V | 5A | 450mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 30V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 5A DO214AB |
3.438 |
|
- | Schottky | 40V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A GP20 |
5.580 |
|
- | Standard | 400V | 1.5A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A GP20 |
4.752 |
|
- | Standard | 600V | 1.5A | 1.8V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A P600 |
3.294 |
|
- | Standard | 400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A P600 |
7.650 |
|
- | Standard | 600V | 3A | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | P600, Axial | P600 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 600MA DO204 |
4.320 |
|
SUPERECTIFIER® | Standard | 600V | 600mA | 1.4V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600mA | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 600MA DO204 |
5.472 |
|
SUPERECTIFIER® | Standard | 600V | 600mA | 1.4V @ 600mA | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
8.478 |
|
- | Standard | 400V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
5.796 |
|
- | Standard | 400V | 1A | - | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | - | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
5.850 |
|
- | Standard | 100V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
8.532 |
|
- | Standard | 150V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO263AB |
3.312 |
|
- | Standard | 200V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 600MA MPG06 |
8.910 |
|
- | Standard | 50V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 50V | 9pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 600MA MPG06 |
6.048 |
|
- | Standard | 100V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 9pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |