Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 878/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
3.544 |
|
SUPERECTIFIER® | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO204AL |
7.128 |
|
SUPERECTIFIER® | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
3.708 |
|
SUPERECTIFIER® | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 22pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 1A DO204AL |
7.272 |
|
SUPERECTIFIER® | Standard | 300V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
7.902 |
|
SUPERECTIFIER® | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 15pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 2A DO204AC |
2.232 |
|
SUPERECTIFIER® | Standard | 50V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO204AC |
6.318 |
|
SUPERECTIFIER® | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO204AC |
6.894 |
|
SUPERECTIFIER® | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO204AC |
6.750 |
|
SUPERECTIFIER® | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 70pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 2A DO204AC |
4.680 |
|
SUPERECTIFIER® | Standard | 300V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A DO204AC |
7.416 |
|
SUPERECTIFIER® | Standard | 400V | 2A | 1.25V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 45pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A GP20 |
4.950 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A GP20 |
4.068 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A GP20 |
4.626 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A GP20 |
6.840 |
|
SUPERECTIFIER® | Standard | 150V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A GP20 |
5.112 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A GP20 |
7.074 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A GP20 |
7.722 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 3A GP20 |
3.562 |
|
SUPERECTIFIER® | Standard | 300V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A GP20 |
8.154 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A GP20 |
3.996 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A GP20 |
6.048 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 5A GP20 |
4.932 |
|
SUPERECTIFIER® | Standard | 50V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A GP20 |
2.934 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A GP20 |
3.780 |
|
SUPERECTIFIER® | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A GP20 |
2.448 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 5A GP20 |
5.508 |
|
SUPERECTIFIER® | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A GP20 |
3.924 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A GP20 |
3.384 |
|
SUPERECTIFIER® | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 5A GP20 |
8.244 |
|
SUPERECTIFIER® | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 75pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |