Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 859/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 12A D2PAK |
4.176 |
|
- | Standard | 1200V | 12A | 2.2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 20A D2PAK |
4.014 |
|
- | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 2A DO15 |
8.136 |
|
- | Standard | 200V | 2A | 1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 30A D2PAK |
7.974 |
|
- | Standard | 200V | 30A | 1.05V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 3A DPAK |
8.244 |
|
- | Standard | 1200V | 3A | 2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 115ns | 10µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 4A DPAK |
4.104 |
|
- | Standard | 200V | 4A | 1.05V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 3µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 5A DPAK |
6.194 |
|
- | Standard | 1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 400V 60A DO247 |
3.402 |
|
- | Standard | 400V | 60A | 1.2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 50µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 80A DO247 |
6.048 |
|
- | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 200V 8A DPAK |
2.700 |
|
- | Standard | 200V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 6µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A D2PAK |
6.912 |
|
- | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 8A D2PAK |
5.796 |
|
- | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 8A D2PAK |
7.074 |
|
- | Standard | 1200V | 8A | 2.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A D2PAK |
4.842 |
|
- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 30µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
Microsemi |
DIODE GEN PURP 200V AXIAL |
3.400 |
|
- | Standard | 200V | - | - | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Through Hole | Axial | Axial | - |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 30V 100MA 1005 |
7.686 |
|
- | Schottky | 30V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 2µA @ 25V | 6pF @ 10V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 30V 100MA 0603 |
3.096 |
|
- | Schottky | 30V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 2µA @ 25V | 6pF @ 10V, 1MHz | Surface Mount | 2-SMD, No Lead | 0603/SOD-523F | 125°C (Max) |
|
|
|
Comchip Technology |
DIODE GEN PURP 80V 100MA 1005 |
6.066 |
|
- | Standard | 80V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 80V | 3pF @ 0.5V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | 125°C (Max) |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 600V 12.5A TO220 |
3.546 |
|
Zero Recovery™ | Silicon Carbide Schottky | 600V | 12.5A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 470pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 4A TO220-2L |
2.232 |
|
Stealth™ | Standard | 600V | 4A | 2.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220-2L | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 4A TO220F |
5.850 |
|
Stealth™ | Standard | 600V | 4A | 2.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 600V 15A TO247 |
3.438 |
|
- | Standard | 600V | 15A | 2.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A D2PAK |
2.394 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 1A MSR |
7.470 |
|
- | Standard | 400V | 1A | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 10µA @ 400V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A TO277A |
2.628 |
|
eSMP®, TMBS® | Schottky | 100V | 10A | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
5.706 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 12A TO277A |
3.456 |
|
eSMP®, TMBS® | Schottky | 100V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -40°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 20V 1A DO214AC |
7.938 |
|
- | Schottky | 20V | 1A | 310mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 160pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | SMA-F / DO-214AC | -20°C ~ 80°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 85V 150MA SOD923 |
5.238 |
|
- | Standard | 85V | 150mA | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 1µA @ 75V | 2pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923F | -55°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 70V 70MA SOD923 |
4.932 |
|
- | Schottky | 70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 8ns | 200nA @ 50V | 3pF @ 0V, 1MHz | Surface Mount | SOD-923 | SOD-923F | -55°C ~ 150°C |