Raddrizzatori - Singoli
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CategoriaSemiconduttori / Diodi e raddrizzatori / Raddrizzatori - Singoli
Record 34.936
Pagina 848/1165
Immagine |
Numero parte |
Produttore |
Descrizione |
Disponibile |
Quantità |
Serie | Tipo di diodo | Tensione - Inversione CC (Vr) (Max) | Corrente - Media Rettificata (Io) | Tensione - Avanti (Vf) (Max) @ If | Velocità | Tempo di recupero inverso (trr) | Corrente - Perdita inversa @ Vr | Capacità @ Vr, F | Tipo di montaggio | Pacchetto / Custodia | Pacchetto dispositivo fornitore | Temperatura di esercizio - Giunzione |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 25A WAFER |
7.956 |
|
- | Standard | 1200V | 25A (DC) | 2.1V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
6.282 |
|
- | Standard | 1200V | 35A (DC) | 1.6V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
3.402 |
|
- | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 50A WAFER |
2.394 |
|
- | Standard | 600V | 50A (DC) | 1.25V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SILICON 300V 10A WAFER |
4.212 |
|
- | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | Surface Mount | Die | Sawn on foil | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER |
6.336 |
|
- | Standard | 600V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
5.724 |
|
- | Standard | 1200V | 35A (DC) | 1.9V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 35A WAFER |
5.670 |
|
- | Standard | 1200V | 35A (DC) | 2.1V @ 35A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
6.480 |
|
- | Standard | 1200V | 50A (DC) | 1.6V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 75A WAFER |
3.294 |
|
- | Standard | 600V | 75A (DC) | 1.25V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER |
4.392 |
|
- | Standard | 1700V | 50A (DC) | 1.8V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER |
3.042 |
|
- | Standard | 600V | 150A (DC) | 1.9V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
8.370 |
|
- | Standard | 1200V | 50A (DC) | 1.9V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 50A WAFER |
8.298 |
|
- | Standard | 1200V | 50A (DC) | 2.1V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
6.552 |
|
- | Standard | 1200V | 75A (DC) | 1.6V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 50A WAFER |
7.128 |
|
- | Standard | 1700V | 50A (DC) | 2.15V @ 50A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 100A WAFER |
4.806 |
|
- | Standard | 600V | 100A (DC) | 1.25V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER |
6.840 |
|
- | Standard | 1700V | 75A (DC) | 1.8V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER |
3.654 |
|
- | Standard | 600V | 200A (DC) | 1.9V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
2.232 |
|
- | Standard | 1200V | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
2.700 |
|
- | Standard | 1200V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
6.966 |
|
- | Standard | 1200V | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER |
6.120 |
|
- | Standard | 1700V | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER |
6.570 |
|
- | Standard | 600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
8.982 |
|
- | Standard | 1700V | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
4.662 |
|
- | Standard | 1700V | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -40°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER |
8.640 |
|
- | Standard | 1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
5.724 |
|
- | Standard | 1200V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
2.286 |
|
- | Standard | 1200V | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
3.744 |
|
- | Standard | 1200V | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | Surface Mount | Die | Sawn on foil | -55°C ~ 150°C |